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Related papers: Organic Single-Crystal Field-Effect Transistors

200 papers

We show that it is possible to reach one of the ultimate goals of organic electronics: producing organic field-effect transistors with trap densities as low as in the bulk of single crystals. We studied the spectral density of localized…

Materials Science · Physics 2015-05-18 Wolfgang L. Kalb , Simon Haas , Cornelius Krellner , Thomas Mathis , Bertram Batlogg

Organic semiconductors are usually not thought to show outstanding performance in highly-integrated, sub 100 nm transistors. Consequently, single-crystalline materials such as SWCNTs, MoS2 or inorganic semiconductors are the material of…

Applied Physics · Physics 2019-10-02 Jakob Lenz , Fabio del Giudice , Fabian R. Geisenhof , Felix Winterer , R. Thomas Weitz

The ability to control electronic properties of a material by externally applied voltage is at the heart of modern electronics. In many cases, it is the so-called electric field effect that allows one to vary the carrier concentration in a…

Mesoscale and Nanoscale Physics · Physics 2007-05-23 K. S. Novoselov , A. K. Geim , S. V. Morozov , S. V. Dubonos , Y. Zhang , D. Jiang

We present a detailed study of the electrical transport properties of a recently discovered iron-based superconductor: Sm$_4$Fe$_2$As$_2$Te$_{0.72}$O$_{2.8}$F$_{1.2}$. We followed the temperature dependence of the upper critical field by…

Superconductivity · Physics 2016-12-20 A Pisoni , S Katrych , P Szirmai , B Náfrádi , R Gaál , J Karpinski , L Forró

We have investigated the electron mobility on field-effect transistors based on PDIF-CN$_{2}$ single crystals. The family of the small molecules PDI8-CN$_{2}$ has been chosen for the promising results obtained for vapour-deposited thin film…

Materials Science · Physics 2009-02-06 Anna S. Molinari , Helena Alves , Zhihua Chen , Antonio Facchetti , Alberto F. Morpurgo

A field-effect transistor that employs a perovskite-type SrTiO3 single crystal as the semiconducting channel is revealed to function as n-type accumulation-mode device with characteristics similar to that of organic FET's. The device was…

Strongly Correlated Electrons · Physics 2007-05-23 K. Ueno , I. H. Inoue , H. Akoh , M. Kawasaki , Y. Tokura , H. Takagi

In-plane electrical transport properties of MgB2 single crystals grown under high pressure of 4-6 GPa and temperature of 1400-1700oC in Mg-B-N system have been measured. For all specimens we found sharp superconducting transition around…

Superconductivity · Physics 2009-11-07 Yu. Eltsev , S. Lee , K. Nakao , N. Chikumoto , S. Tajima , N. Koshizuka , M. Murakami

By developing a two-dimensional (2D) full quantum simulation, the attributes of carbon nanotube field-effect transistors (CNTFETs) in different temperatures have been comprehensively investigated. Simulations have been performed by…

Materials Science · Physics 2017-02-07 Ali Naderi , S. Mohammad Noorbakhsh , Hossein Elahipanah

Superconducting technology provides most sensitive field detectors, promising implementations of qubits and high field magnets for medical imaging and for most powerful particle accelerators. Thus, with the discovery of new superconducting…

We investigated the superconducting and transport properties in FeTe$_{1-x}$Se$_{x}$ (0.1 $\leq$ $x$ $\leq$ 0.4) single crystals prepared by O$_2$-annealing. Sharp superconducting transition width observed in magnetization measurement and…

Superconductivity · Physics 2015-02-17 Yue Sun , Toshihiro Taen , Tatsuhiro Yamada , Yuji Tsuchiya , Sunseng Pyon , Tsuyoshi Tamegai

A detailed study of the electronic transport and magnetic properties of Fe$_{1-x}$Cu$_x$Cr$_2$S$_4$ ($x \leq 0.5$) on single crystals is presented. The resistivity is investigated for $2 \leq T \leq 300$ K in magnetic fields up to 14 Tesla…

The large charge-transfer anisotropy of quasi-one- and quasi-two-dimensional crystalline organic metals means that magnetoresistance is one of the most powerful tools for probing their bandstructure and interesting phase diagrams. Here we…

Strongly Correlated Electrons · Physics 2009-09-29 J. Singleton , R. D. McDonald , N. Harrison

Electrical characterization of few-layer MoS2 based field effect transistors with Ti/Au electrodes is performed in the vacuum chamber of a scanning electron microscope in order to study the effects of electron beam irradiation on the…

Single-crystal organic field-effect transistors (OFETs) based on p-channel molecular semiconductors have led to breakthrough carrier mobilities and to the observation of band-like transport. These results represent the limit in our quest…

Materials Science · Physics 2012-02-10 Nikolas A. Minder , Shimpei Ono , Zhihua Chen , Antonio Facchetti , Alberto F. Morpurgo

The electrical and optical response of a field-effect device comprising a network of semiconductor-enriched single-wall carbon nanotubes, gated with sodium chloride solution is investigated. Field-effect is demonstrated in a device that…

Mesoscale and Nanoscale Physics · Physics 2010-09-24 Manu Jaiswal , C. S. Suchand Sangeeth , Wei Wang , Ya-Ping Sun , Reghu Menon

The electronic properties of interfaces between two different solids can differ strikingly from those of the constituent materials. For instance, metallic conductivity, and even superconductivity, have been recently discovered at interfaces…

Materials Science · Physics 2009-11-13 H. Dias Alves , A. S. Molinari , H. Xie , A. F. Morpurgo

Temperature-dependent I-V and C-V spectroscopy of single InAs nanowire field-effect transistors were utilized to directly shed light on the intrinsic electron transport properties as a function of nanowire radius. From C-V…

Materials Science · Physics 2015-05-13 Alexandra Ford , Johnny Ho , Yu-Lun Chueh , Yu-Chih Tseng , Zhiyong Fan , Jing Guo , Jeffrey Bokor , Ali Javey

Continued dimensional scaling of semiconductor devices has driven information technology into vastly diverse applications. As the size of devices approaches fundamental limits, metrology techniques with nanometre resolution and…

Electronic transport through rubrene single-crystal field effect transistors (FETs) is investigated experimentally in the high carrier density regime (n ~ 0.1 carrier/molecule). In this regime, we find that the current does not increase…

Strongly Correlated Electrons · Physics 2009-11-13 S. Fratini , H. Xie , I. N. Hulea , S. Ciuchi , A. F. Morpurgo

We have investigated the temperature dependence of the resistive upper critical fields ($\mu_{0}H_{\rm c2}(T)$) for an Fe$_{1.05}$Te$_{0.85}$Se$_{0.15}$ single crystal, which exhibit superconductivity at $T_{\rm c} \sim 14 K, in magnetic…

Superconductivity · Physics 2010-06-28 T. Kida , M. Kotani , Y. Mizuguchi , Y. Takano , M. Hagiwara