Related papers: Spin-Transfer Effects in Nanoscale Magnetic Tunnel…
A giant tunneling electroresistance effect may be achieved in a ferroelectric tunnel junction by exploiting the magnetoelectric effect at the interface between a ferroelectric barrier and magnetic La1-xSrxMnO3 electrode. Using…
We study spin-dependent electron transport through a ferromagnetic-antiferromagnetic-normal metal tunneling junction subject to a voltage or temperature bias, in the absence of spin-orbit coupling. We derive microscopic formulas for various…
We present tight-binding calculations of the spin torque in non-collinear magnetic tunnel junctions based on the non-equilibrium Green functions approach. We have calculated the spin torque via the effective local magnetic moment approach…
Subjecting a magnetic tunnel junction (MTJ) to a spin current and/or electric voltage induces magnetic precession, which can reciprocally pump current through the circuit. This results in an ac impedance, which is sensitive to the magnetic…
Spin transfer - the transfer of angular momentum from spin-polarized electrical current to magnetic materials - has been extensively researched as an efficient mechanism for the electronic manipulation of the static and dynamic states in…
Stable and switchable polarization of ferroelectric materials opens a possibility to electrically control their functional behavior. A particularly promising approach is to employ ferroelectric tunnel junctions where the polarization…
Schemes of switching nanomagnetic memories via the effect of spin torque with various polarizations of injected electrons are studied. Simulations based on macrospin and micromagnetic theories are performed and compared. We demonstrate that…
A theory of spin-polarized transport in inhomogeneous magnetic semiconductors is developed and applied to magnetic/nonmagnetic p-n junctions. Several phenomena with possible spintronic applications are predicted, including spinvoltaic…
The temperature and voltage dependence of spin transport is theoretically investigated in a new type of magnetic tunnel junction, which consists of two ferromagnetic outer electrodes separated by a ferromagnetic barrier and a nonmagnetic…
The spin-transfer torque from a DC spin-polarized current can generate highly-coherent magnetic precession in nanoscale magnetic-multilayer devices. By measuring linewidths of spectra from the resulting resistance oscillations, we argue…
We have studied the effects of Mn concentration on the ballistic spin-polarized transport through diluted magnetic semiconductor heterostructures with a single paramagnetic layer. Using a fitted function for zero-field conduction band…
Magnetic tunnel junctions (MTJs) with Hf0.5Zr0.5O2 barriers are reported to show both tunneling magnetoresistance effect (TMR) and tunneling electroresistance effect (TER), displaying four resistance states by magnetic and electric field…
We theoretically investigate the role of spin fluctuations in charge transport through a magnetic junction. Motivated by recent experiments that measure a nonlinear dependence of the current on electrical bias, we develop a systematic…
A method for deterministic control of the magnetic order parameter using an electrical stimulus is highly desired for the new generation of spintronic and magnetoelectronic devices. Much effort has been focused on magnetic domain-wall…
In this work we demonstrate explicit analytical expressions for both charge and spin currents which constitute the 2x2 spinor in magnetic tunnel junctions with noncollinear magnetizations under applied voltage. The calculations have been…
The charge and spin diffusion equations taking into account spin-flip and spin-transfer torque were numerically solved using a finite element method in complex non-collinear geometry with strongly inhomogeneous current flow. As an…
The discovery that a spin polarized current can exert a large torque on a ferromagnet through a transfusion of spin angular momentum, offers a new way to control a magnetization by simple current injection, without the help of an applied…
The dynamics of a single spin embedded in a the tunnel junction between ferromagnetic contacts is strongly affected by the exchange coupling to the tunneling electrons. Moment reversal of the local spin induced by the bias voltage across…
A numerical simulation of spin-dependent quantum transport for a spin field effect transistor (spinFET) is implemented in a widely used simulator nanoMOS. This method includes the effect of both spin relaxation in the channel and the…
Processes which flip the spin of an electron tunneling in a junction made up of magnetic electrodes are studied. It is found that: i) Magnetic impurities give a contribution which increases the resistance and lowers the magnetoresistance,…