Related papers: Laser-Induced Above-Bandgap Transparency in GaAs
The photoconductions of ultrafast InGaAs:ErAs nanocomposites at low temperatures were investigated. The parabolic Tauc edge as well as the exponential Urbach tail are identified in the absorption spectrum. The Tauc edge supports that the…
Spectral red-shifting of high power laser pulses propagating through underdense plasma can be a source of ultrashort mid-infrared (MIR) radiation. During propagation, a high power laser pulse drives large amplitude plasma waves, depleting…
Franz-Keldysh effect is expressed in the smearing of the absorption edge in semiconductors under high electric fields. While Franz and Keldysh considered a limited case of externally applied uniform electric field, the same effect may be…
Carbon-doped GaN is a promising material for sub-bandgap triggered optical switches. When incorporated in GaN, carbon introduces deep compensating centers that enable defect-mediated extrinsic photoconductivity. Here, we investigate the…
We propose a semi-analytical modeling of smoothed laser beams deviation induced by plasma flows. Based on a Gaussian description of speckles, the model includes spatial, temporal and polarization smoothing techniques,through fits issued…
We study the optical reflectivity of three-dimensional (3D) photonic band gap crystals with increasing thickness. The crystals consist of GaAs plates with nanorod arrays that are assembled by an advanced stacking method into high-quality 3D…
Intense laser pulses have recently emerged as a tool to tune between different orders in complex quantum materials. Among different light-induced phenomena, transient superconductivity far above the equilibrium transition temperature in…
The damage mechanism induced by laser pulse of different duration in borosilicate glass widely used for making confinement geometry targets which are important for laser driven shock multiplication and elongation of pressure pulse, is…
We demonstrate a new, nonlinear optical effect of electric currents. First, a steady current is generated by applying a voltage on a doped GaAs crystal. We demonstrate that this current induces second-harmonic generation of a probe laser…
The potential of graphene-based materials consisting of one or a few layers of graphite for integrated electronics originates from the large room-temperature carrier mobility in these systems (approx. 10,000 cm2/Vs). However, the…
The slow light effects of an amplitude modulated Gaussian (AMG) pulse in a cesium atomic vapor are presented. In a single-$\Lambda$ type electromagnetically induced transparency (EIT) medium, more severe distortion is observed for an AMG…
We demonstrate optomechanically-mediated electromagnetically-induced transparency and wavelength conversion in silicon nitride (Si3N4) microdisk resonators. Fabricated devices support whispering gallery optical modes with a quality factor…
InGaAs/GaAsBi/InGaAs quantum wells (QWs) were grown on GaAs substrates by gas source molecular beam epitaxy for realizing the type II band-edge line-up. Both type I and type II transitions were observed in the Bi containing W QWs and the…
We propose and substantiate the concept of terahertz (THz) laser enabled by the resonant electron radiative transitions between graphene layers (GLs) in double-GL structures. We estimate the THz gain for TM-mode exhibiting very low Drude…
A way to considerably enhance terahertz radiation, emitted in the interaction of intense mid-infrared laser pulses with atomic gases, in both the total energy and the electric-field amplitude is suggested. The scheme is based on the…
We theoretically demonstrated the possible emergence of slow-light self-induced transparency solitons in the infinite one-dimensional coupled cavity array, with each cavity containing a single qubit. We have predicted a substantial…
By driving photoassociation transitions we form electronically excited molecules (Na$_2^*$) from ultra-cold (50-300 $\mu$K) Na atoms. Using a second laser to drive transitions from the excited state to a level in the molecular ground state,…
We consider theoretically a closed (zero-dimensional) semiconductor microcavity where confined vacuum photonic mode is coupled to electrons in valence band of the semiconductor. It is shown that vacuum-induced virtual electron transitions…
We present inverted metamorphic Ga0.3In0.7As photovoltaic converters with sub-0.60 eV bandgaps grown on InP and GaAs substrates. The compositionally graded buffers in these devices have threading dislocation densities of 1.3x10^6 cm^-2 and…
Lattice modes are intrinsic to the periodic structures and their occurrence can be easily tuned and controlled by changing the lattice constant of the structural array. Previous studies have revealed excitation of sharp absorption…