Related papers: Weak localization and antilocalization in semicond…
We study the magnetoresistance of two-dimensional bosonic Anderson insulators. We describe the change in spatial decay of localized excitations in response to a magnetic field, which is given by an interference sum over alternative…
We grew single-crystal thin films of a topological crystalline insulator (TCI) SnTe with a smooth surface at the atomic scale by molecular beam epitaxy (MBE). In the magnetoresistance (MR) measurement, we observed both positive and negative…
In this work, we present an analysis of magnetic properties of weak ferrimagnets of the YFe$_{1-x}$Cr$_x$O$_3$ type. Taking into account the main spin interactions - isotropic Heisenberg superexchange, antisymmetric Dzyaloshinskii-Moriya…
Weak localization leads to the same correction to both the conductivity and the electron-phonon coupling constant $\lambda$ (and $\lambda_{tr}$). Consequently the temperature dependence of the (thermal) electrical resistivity is decreasing…
The magnetoresistance of a low carrier density, disordered GaAs based two-dimensional (2D) electron gas has been measured in parallel magnetic fields up to 32 T. The feature in the resistance associated with the complete spin polarization…
We use a machine learning approach to identify the importance of microstructure characteristics in causing magnetization reversal in ideally structured large-grained Nd$_2$Fe$_{14}$B permanent magnets. The embedded Stoner-Wohlfarth method…
We induce surface carrier densities up to $\sim7\cdot 10^{14}$cm$^{-2}$ in few-layer graphene devices by electric double layer gating with a polymeric electrolyte. In 3-, 4- and 5-layer graphene below 20-30K we observe a logarithmic upturn…
Theory of weak localization in graphene with Rashba splitting of energy spectrum is developed. Anomalous magnetoresistance caused by weak localization is calculated with account for inter- and intravalley, spin-orbit and spin-valley…
We analyze the complex impact of the local magnetic spin texture on the transverse Hall-type voltage in device structures utilized to measure magnetoresistance effects. We find a highly localized and asymmetric magnetic sensitivity in the…
We have studied the magnetoresistance in a high-mobility Si inversion layer down to low electron concentrations at which the longitudinal resistivity $\rho_{xx}$ has an activated temperature dependence. The angle of the magnetic field was…
By computing spin-polarized electronic transport across a finite zigzag graphene ribbon bridging two metallic graphene electrodes, we demonstrate, as a proof of principle, that devices featuring 100% magnetoresistance can be built entirely…
A 75 nm-thick Fe0.5Pt0.5 film is a ferromagnetic metal showing striped magnetic domains in remanence at room temperature. The magnetoresistance is characterized by varying the external temperature and the in-plane magnetic field intensity,…
We present a combined experimental and numerical study into the magnetophoresis behavior of weakly magnetic nanoparticle suspensions in the vicinity of a wire under a non-uniform magnetic field and negligible inertia. The experiments were…
We present a phenomenological model qualitatively explaining negative magnetoresistance in quasi-one-dimensional superconducting channels in the resistive state. The model is based on the assumption that fluctuations of the order parameter…
We report the observation of a giant positive magnetoresistance in millimetre scale hydrogenated graphene with magnetic field oriented in the plane of the graphene sheet. A positive magnetoresistance in excess of 200\% at a temperature of…
The in-plane magnetoresistance (MR) in La2-xSrxCuO4 films with 0.03 < x < 0.05 has been studied in the temperature range 1.6 K to 100 K, and in magnetic fields up to 14 T, parallel and perpendicular to the CuO2 planes. The behavior of the…
We report results of a magneto-transport study on thin films of the topological semi-metal candidate PdSb$_{2}$ (PS). We observe a positive correction to magneto-conductivity at low temperatures, which is a signature of weak…
We reconsider the theory of magnetoresistance in hopping semiconductors. First, we have shown that the random potential of the background impurities affects significantly preexponential factor of the tunneling amplitude which becomes to be…
Thin films of topological insulator Bi_2Se_3 were deposited directly on insulating ferromagnetic EuS. Unusual negative magnetoresistance was observed near the zero field below the Curie temperature (T_C), resembling the weak localization…
Using a combination of magnetometry and magnetotransport techniques, we studied temperature and magnetic field behavior of magnetization in Py/Gd heterostructures. It was shown quantitatively that proximity with Py enhances magnetic order…