Related papers: A Magnetic-Field-Effect Transistor and Spin Transp…
In superconductors that lack inversion symmetry, a supercurrent flow can lead to nondissipative magnetoelectric effects. We offer a straightforward formalism to obtain a supercurrent-induced magnetization in superconductors with broken…
We consider a microscopic theory for the spin Hall magnetoresistance (SMR). We generally formulate a spin conductance at an interface between a normal metal and a magnetic insulator in terms of spin susceptibilities. We reveal that SMR is…
We derive kinetic equations describing injection and transport of spin polarized carriers in organic semiconductors with hopping conductivity via an impurity level. The model predicts a strongly voltage dependent magnetoresistance, defined…
The spin-transfer nano-oscillator (STNO) offers the possibility of using the transfer of spin angular momentum via spin-polarized currents to generate microwave signals. However, at present STNO microwave emission mainly relies on both…
We present experimental and numerical micromagnetic data on the effect of spin momentum transfer in current perpendicular to the plane spin valves. Starting from a configuration with orthogonal free and pinned layer magnetizations, the free…
An electric current generates a magnetic field, and magnetic fields cannot exist in the interior of type I superconductors. As a consequence of these two facts, electric currents can only flow near the surface of a type I superconducting…
New efficient mechanism of obtaining spin polarization in_nonmagnetic_ semiconductors at arbitrary temperutures is described. The effect appears during tunneling of electrons from a nonmagnetic semiconductors (S) into ferromagnet (FM)…
The interface between a ferro-/ferrimagnetic insulator and a normal metal can support spin currents polarized collinear with and perpendicular to the magnetization direction. The flow of angular momentum perpendicular to the magnetization…
In semiconductor spintronic devices, the semiconductor is usually lightly doped and nondegenerate, and moderate electric fields can dominate the carrier motion. We recently derived a drift-diffusion equation for spin polarization in the…
Because of spin-orbit interaction, an electrical current is accompanied by a spin current resulting in spin accumulation near the sample edges. Due again to spin-orbit interaction this causes a small decrease of the sample resistance. An…
Magnons can generate a spin current, and the standard generating mechanism requires at least one external field. Since this mechanism is often applied to a multilayer system including a magnet and a paramagnetic metal, the system can…
Torsional oscillations of a free-standing semiconductor beam are shown to cause spin-dependent oscillating potentials that spin-polarize an applied charge current in the presence of intentional or disorder scattering potentials. We propose…
Existing investigations of the anomalous Hall effect i.e. a current flowing transverse to the electric field in the absence of an external magnetic field) are concerned with the transport current. However, for many applications one needs to…
A two-core transducer assembly using a Fe73.5Nb3Cu1Si13.5B9 ribbon to detect a change of magnetic field is proposed and tested for displacement (linear and angular) and current sensor. Two identical inductors, with the ribbon as core, are a…
The anomalous conducting phase that has been shown to exist in zero field in dilute two-dimensional electron systems in silicon MOSFETs is driven into a strongly insulating state by a magnetic field of about 20 kOe applied parallel to the…
We report on the non-linear in-plane electrical transport in coherently grown [La0.7Sr0.3MnO3/SrTiO3] multilayers with ultrathin (< 3 nm) single layers. Current-induced switching of the conductance, with low conductance at larger currents,…
When a charge current is injected into an altermagnet along a suitable crystallographic direction, a transverse spin current can be generated. This so-called spin-splitter effect does not rely on spin-orbit coupling, and is thus distinct…
We theoretically study the spin-polarized transport through a single-molecule magnet, which is weakly coupled to ferromagnetic leads, by means of the rate-equation approach. We consider both the ferromagnetic and antiferromagnetic…
We fabricate a vertical spin metal-oxide-semiconductor field-effect transistor (spin-MOSFET) structure, which is composed of an epitaxial single-crystal heterostructure with a ferromagnetic-semiconductor GaMnAs source/drain, and investigate…
In magnets with non-collinear spin configuration the expectation value of the conventionally defined spin current operator contains a contribution which renormalizes an external magnetic field and hence affects only the precessional motion…