Related papers: A Magnetic-Field-Effect Transistor and Spin Transp…
The silicon (Si) based spin-MOSFET (metal-oxide semiconductor field-effect transistor) is considered to be the building block of low-power-consumption electronics, utilizing spin-degrees of freedom in semiconductor devices. In this paper,…
We report on an unconventional $macroscopic$ field effect transistor composed of electrons floating above the surface of superfluid helium. With this device unique transport regimes are realized in which the charge density of the electron…
The spin field effect transistor envisioned by Datta and Das opens a gateway to spin information processing. Although the coherent manipulation of electron spins in semiconductors is now possible, the realization of a functional spin field…
Current-induced magnetization switching, a fundamental phenomenon related to spin-transport of electrons, enables non-voltaic and fast information write, facilitating applications in low-power memory and logic devices. However,…
Spin-polarized current effect is studied on the static and dynamic magnetization of the antiferromagnet in a ferromagnet - antiferromagnet nanojunction. The macrospin approximation is generalized to antiferromagnets. Canted…
Superconductors used in magnet technology could carry extreme currents because of their ability to keep the magnetic flux motionless. The dynamics of the magnetic flux interaction with superconductors is controlled by this property. The…
The electron transport properties of hybrid ferromagnetic|normal metal structures such as multilayers and spin valves depend on the relative orientation of the magnetization direction of the ferromagnetic elements. Whereas the contrast in…
Electrically controlled rotation of spins in a semiconducting channel is a prerequisite for the successful realization of many spintronic devices, like, e.g., the spin field effect transistor (sFET). To date, there have been only a few…
The generation, manipulation and detection of spin-polarized electrons in nanostructures define the main challenges of spin-based electronics[1]. Amongst the different approaches for spin generation and manipulation, spin-orbit coupling,…
The external controllability of the magnetic properties in topological insulators would be important both for fundamental and practical interests. Here we predict the electric-field control of ferromagnetism in a thin film of insulating…
Spin Hall effects are a collection of phenomena, resulting from spin-orbit coupling, in which an electrical current flowing through a sample can lead to spin transport in a perpendicular direction and spin accumulation at lateral…
Using the example of a pressed sample consisting of chromium dioxide nanoparticles coated with insulating shells, we study the relationship between the electronic transport system and magnetic subsystem in granular spin-polarized metals. It…
Ferroelectric field-effect transistors employ a ferroelectric material as a gate insulator, the polarization state of which can be detected using the channel conductance of the device. As a result, the devices are of potential to use in…
We show that the conductance of Spin Field Effect Transistors (SPINFET) [Datta and Das, Appl. Phys. Lett., Vol. 56, 665 (1990)] is affected by a single (non-magnetic) impurity in the transistor's channel. The extreme sensitivity of the…
Charge-spin conversion phenomena such as the spin Hall effect allow for the excitation of magnons in a magnetic layer by passing an electric current in an adjacent nonmagnetic conductor. We demonstrate that this current-induced modification…
Using micromagnetics we demonstrate that the r.f. field produced by a spin valve can be used to reverse the magnetization in a magnetic nanoparticle. The r.f. field is generated using a current that specifically excites a uniform spin wave…
When a spin-splitting field is introduced to a thin film superconductor, the spin currents polarized along the field couples to energy currents that can only decay via inelastic scattering. We study spin and energy injection into such a…
Recent theories predict dissipationless spin current induced by an electric field in doped semiconductors. Nevertheless, the charge current is still dissipative in these systems. In this work, we theoretically predict the dissipationless…
Noncollinear antiferromagnets, such as Mn$_3$Sn and Mn$_3$Ir, were recently shown to be analogous to ferromagnets in that they have a large anomalous Hall effect. Here we show that these materials are similar to ferromagnets in another…
Efficient injection of spin-polarized electrons into the conduction band of silicon is limited by the formation of a silicide at the ferromagnetic metal (FM)/silicon interface. In the present work, this "magnetically-dead" silicide (where…