Related papers: Long-Lived Spin Coherence States
The recently-discovered monolayer transition metal dichalcogenides (TMDCs) provide a fertile playground to explore new coupled spin-valley physics. Although robust spin and valley degrees of freedom are inferred from polarized…
We investigate spin transport in InSb/InAlSb heterostructure using the Monte Carlo approach, generalized by including density matrix description of spin for taking spin dynamics into account. In addition to the dominant Dyakonov-Perel (DP)…
We study the time evolution of a single spin coupled inhomogeneously to a spin environment. Such a system is realized by a single electron spin bound in a semiconductor nanostructure and interacting with surrounding nuclear spins. We find…
Silicon is undoubtedly one of the most promising semiconductor materials for spin-based information processing devices. Its highly advanced fabrication technology facilitates the transition from individual devices to large-scale processors,…
Theory of the electron spin relaxation in graphene on the SiO$_2$ substrate is developed. Charged impurities and polar optical surface phonons in the substrate induce an effective random Bychkov-Rashba-like spin-orbit coupling field which…
Prospect of building spintronic devices in which electron spins store and transport information has attracted strong attention in recent years. Here we present some of our representative theoretical results on three fundamental aspects of…
Endohedral fullerenes encapsulating a spin-active atom or ion within a carbon cage offer a route to self-assembled arrays such as spin chains. In the case of metallofullerenes the charge transfer between the atom and the fullerene cage has…
We present a detailed experimental and theoretical analysis of the spin dynamics of two-dimensional electron gases (2DEGs) in a series of n-doped GaAs/AlGaAs quantum wells. Picosecond-resolution polarized pump-probe reflection techniques…
The spin-dependent electron transmission through a helical membrane with account of linear spin-orbit interaction has been investigated by numerically solving the Schr\"odinger equation in cylindrical coordinates . It is shown that the spin…
The dominant source of decoherence for an electron spin in a quantum dot is the hyperfine interaction with the surrounding bath of nuclear spins. The decoherence process may be slowed down by subjecting the electron spin to suitable…
Recently K. Kavokin [Phys. Rev. B 64, 075305 (2001)] suggested that the Dzyaloshinskii-Moriya interaction between localized electrons governs slow spin relaxation in $n$-doped GaAs in the regime close to the metal-insulator transition. We…
We report a Monte Carlo investigation of the effect of a lattice of antidots on spin relaxation in twodimensional electron systems. The spin relaxation time is calculated as a function of geometrical parameters describing the antidot…
We develop a self-consistent theory describing the spin and spatial electron diffusion in the impurity band of doped semiconductors under the effect of a weak spin-orbit coupling. The resulting low-temperature spin-relaxation time and…
The coherence time of an electron spin decohered by the nuclear spin environment in a quantum dot can be substantially increased by subjecting the electron to suitable dynamical decoupling sequences. We analyze the performance of high-level…
We investigate theoretically the coherent longitudinal and transversal spin relaxation of photoexcited electrons in quantum wells in quantized magnetic fields. We find the relaxation time for typical quantum well parameters between 100 and…
A theory of spin-polarized electron transport in ferromagnet/semiconductor heterostructures, based on a unified semiclassical description of ballistic and diffusive transport in semiconductor structures, is developed. The aim is to provide…
Spin relaxation in the impurity band of a 2D semiconductor with spin-split spectrum in the external magnetic field is considered. Several mechanisms of spin relaxation are shown to be relevant. The first one is attributed to phonon-assisted…
We study spin relaxation in n-type bulk GaAs, due to the Dyakonov--Perel mechanism, using ensemble Monte Carlo methods. Our results confirm that spin relaxation time increases with the electronic density in the regime of moderate electronic…
The resistivity change due to electron spin resonance (ESR) absorption is investigated in a high-mobility two-dimensional electron system formed in a Si/SiGe heterostructure. Results for a specific Landau level configuration demonstrate…
In this work, we study a possibility to measure the transverse and longitudinal relaxation times of a collection of polarized nuclear spins located in the region of a quantum wire via its conductance. The interplay of an external in-plane…