Related papers: Weak antilocalization in a strained InGaAs/InP qua…
We study quantum interference corrections to the conductivity in (Ga,Mn)As ferromagnetic semiconductors using a model with disordered valence band holes coupled to localized Mn moments through a p-d kinetic-exchange interaction. We find…
Theory of weak antilocalization is developed for high-mobility two-dimensional systems. Spin-orbit interaction of Rashba and Dresselhaus types is taken into account. Anomalous magnetoresistance is calculated in the whole range of…
The quantum correction to electrical conductivity is studied on the basis of two-dimensional Wolff Hamiltonian, which is an effective model for a spin-orbit coupled (SOC) lattice system. It is shown that weak anti-localization (WAL) arises…
We investigate the effects of an in-plane magnetic field on the weak antilocalization signature of near-surface quantum wells lacking bulk and inversion symmetry. The measured magnetoconductivity exhibits a strong anisotropy with respect to…
Theory of weak localization is developed for two-dimensional holes in the presence of in-plane magnetic field. The Zeeman splitting even in the hole momentum results in the spin-dependent phase changing the quantum interference. The…
There currently is a large effort to explore spin-orbit effects in semiconductor structures with the ultimate goal of manipulating electron spins with gates. A search for materials with large spin-orbit coupling is therefore important. We…
We report a magneto-transport study of a two-dimensional hole gas confined to a strained Ge quantum well grown on a relaxed Si0.2Ge0.8 virtual substrate. The conductivity of the hole gas measured as a function of a perpendicular magnetic…
We report the measurements and analysis of weak antilocalization (WAL) in Pb1-xSnxSe topological quantum wells in a new regime where the elastic scattering length is larger than the magnetic length. We achieve this regime through the…
The effect of 50\% Cu doping at the Au site in the topological Dirac semimetal CaAuAs is investigated through electronic band structure calculations, electrical resistivity, and magnetotransport measurements. Electronic structure…
Weak antilocalization (WAL) effect is commonly observed in 2D systems, or 3D topological insulators, topological semimetal systems. Here we report the clear sign of WAL effect in high quality Ta$_{0.7}$Nb$_{0.3}$Sb$_2$ single crystals, in…
We probe the magnetotransport properties of individual InAs nanowires in a field effect transistor geometry. In the low magnetic field regime we observe magnetoresistance that is well described by the weak localization (WL) description in…
In this study, we investigate the weak localization (WL) and weak antilocalization (WAL) effects in twisted bilayer graphene positioned on a hexagonal boron nitride substrate. The bottom graphene layer aligns with the hexagonal boron…
Weak antilocalization (WAL), an increase in the electrical conductivity at low temperatures associated with the suppression of electron localization due to quantum interference effects, is often observed in topological materials. In this…
The weak-localization contribution \delta\sigma(B) to the conductivity of a tunnel-coupled double-layer electron system is evaluated and its behavior in weak magnetic fields B perpendicular or parallel to the layers is examined. In a…
In-plane magnetoconductance of InSb quantum wells (QW) containing a two dimensional electron gas (2DEG) is presented. Using a vector magnet, we created a magnetoconductance map which shows the suppression of weak antilocalization (WAL) as a…
We report on the magnetoconductivity of quasi two-dimensional electron systems in inversion layers on p-type InAs single crystals. In low magnetic fields pronounced features of weak localization and antilocalization are observed. They are…
Gate-controllable spin-orbit coupling is often one requisite for spintronic devices. For practical spin field-effect transistors, another essential requirement is ballistic spin transport, where the spin precession length is shorter than…
The interference induced transverse negative magnetoresistance of GaAs/InGaAs/GaAs quantum well heterostructures has been studied in the presence of strong in-plane magnetic field. It is shown that effect of in-plane magnetic field is…
We consider magnetotransport in a disordered two-dimensional electron gas in the presence of a periodic modulation in one direction. Existing quasiclassical and quantum approaches to this problem account for Weiss oscillations in the…
Weak localization theory is developed for graphene heterostructures with transition metal dichalcogenides and topological insulators where the Rashba and valey-Zeeman spin-splittings of the energy spectrum are large enough. The anomalous…