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The fluctuations of capacitance of a two-dimensional island are studied in the regime of low electron concentration and strong disorder, when electrons can be considered classical particles. The universal capacitance distribution is found,…
We report on low-temperature electronic transport measurements of a silicon metal-oxide-semiconductor quantum dot, with independent gate control of electron densities in the leads and the quantum dot island. This architecture allows the dot…
Ignited by the discovery of the metal-insulator transition, the behaviour of low-disorder two-dimensional (2D) electron systems is currently the focus of a great deal of attention. In the strongly-interacting limit, electrons are expected…
The low-frequency noise figures of single-electron transistors (electrometers) of traditional planar and new stacked geometry were compared. We observed a correlation between the charge noise and the contact area of the transistor island…
In this thesis I find an analytic expression for the conductance of a single electron transistor in the regime when temperature, level spacing, and charging energy of an island are all of the same order. I also study the correction to the…
We present a theory for a mesoscopic turnstile that produces spatially separated streams of electrons and holes along edge states in the quantum Hall regime. For a broad range of frequencies in the non-adiabatic regime the turnstile…
We propose a new method of direct detection of spin accumulation, which overcomes problems of previous measurement schemes. A spin dependent current in a single-electron transistor with ferromagnetic electrodes leads to spin accumulation on…
Quantum criticality has attracted considerable attention both theoretically and experimentally as a way to describe part of the phase diagram of strongly correlated systems. A scale-invariant fluctuation spectrum at a quantum critical point…
Using the nonequilibrium theory of superconductivity with the tunnel Hamiltonian, we consider a mesoscopic NISINISIN heterostructure, i.e., a structure consisting of five intermittent normal-metal (N) and superconducting (S) regions…
We study charging effects and tunneling in the single electron box. Tunneling mixes different charge states and in the nonperturbative regime the charge in the island may be strongly screened. When charge states are nearly degenerate the…
Analysis of room-temperature current-voltage (I-V) characteristics of a silicon box in a nanopillar transistor suggests that a weak electromechanical coupling of 0.17 is responsible for the stable tunnel of single-electron. The dynamics…
The topic of quantum fluctuations in quasi-1D superconductors, also called quantum phase slips (QPS), has attracted a significant attention. It has been shown that the phenomenon is capable to suppress zero resistivity of ultra-narrow…
Radio-frequency reflectometry in silicon single-electron transistors (SETs) is presented. At low temperatures (<4 K), in addition to the expected Coulomb blockade features associated with charging of the SET dot, quasi-periodic oscillations…
Experiments on the direction-resolved full-counting statistics of single-electron tunneling allow testing the fundamentally important Fluctuation Theorem (FT). At the same time, the FT provides a frame for analyzing such data. Here we…
With a modulated oscillator, we study several effects of quantum fluctuations far from thermal equilibrium. One of them is quantum heating, where quantum fluctuations lead to a finite-width distribution of a resonantly modulated oscillator…
We examine the effects of electron-electron interactions on transport between edge states in a multilayer integer quantum Hall system. The edge states of such a system, coupled by interlayer tunneling, form a two-dimensional, chiral metal…
We study the effect of quantum charge fluctuations on the even-odd energy difference for a small superconducting island (Cooper-pair box) connected to a large finite-size superconductor by a tunnel junction. Even-odd energy difference is…
We demonstrate a novel method for measuring the discrete energy spectrum of a quantum dot connected very weakly to a single lead. A train of voltage pulses applied to a metal gate induces tunneling of electrons between the quantum dot and a…
The unique properties of quantum Hall devices arise from the ideal one-dimensional edge states that form in a two-dimensional electron system at high magnetic field. Tunnelling between edge states across a quantum point contact (QPC) has…
We argue that quantum phase slips (QPS) may generate non-equilibrium voltage fluctuations in superconducting nanowires. In the low frequency limit we evaluate all cumulants of the voltage operator which obey Poisson statistics and show a…