Related papers: Nonuniform switching ferromagnetic layers by spin …
Current induced spin-orbit torques driven by the conventional spin Hall effect are widely used to manipulate the magnetization. This approach, however, is nondeterministic and inefficient for the switching of magnets with perpendicular…
We present in-situ transmission electron microscopy observations of domain wall motion in thin freestanding potassium niobate single-crystals. We observe that not all domains of a given polarization orientation are equally switchable in…
Magnetization reversal is a well-studied problem with obvious applicability in computer hard-drives. One can accomplish a magnetization reversal in at least one of two ways: application of a magnetic field, or through a spin current. The…
Electrical manipulation of spins is essential to design state-of-the-art spintronic devices and commonly relies on the spin current injected from a second heavy-metal material. The fact that chiral antiferromagnets produce spin current…
Sliding ferroelectrics constructed from stacked nonpolar monolayers enable out-of-plane polarization in two dimensions with exceptional properties, including ultrafast switching speeds and fatigue-free behavior. However, the widely accepted…
We propose a new type of multi-bit and energy-efficient magnetic memory based on current-driven, field-free, and highly controlled domain wall motion. A meandering domain wall channel with precisely interspersed pinning regions provides the…
We establish that the interplay of itinerant fermions with localized magnetic moments on a checkerboard lattice leads to magnetic flux-phases. For weak itineracy the flux-phase is coplanar and the electronic dispersion takes the shape of…
The current-driven domain wall motion along two exchange-coupled ferromagnetic layers with perpendicular anisotropy is studied by means of micromagnetic simulations and compared to the conventional case of a single ferromagnetic layer. Our…
Conventional computer electronics creates a dichotomy between how information is processed and how it is stored. Silicon chips process information by controlling the flow of charge through a network of logic gates. This information is then…
The effect of undesirable high-frequency free-layer switching in magnetic multilayer systems, referred to as back hopping, is investigated by means of the spin-diffusion model. A possible origin of the back-hopping effect is found to be the…
The mechanisms of the magnetization switching of magnetic multilayers driven by a current are studied by including exchange interaction between local moments and spin accumulation of conduction electrons. It is found that this exchange…
The spin flip of the conduction electrons at the interface of a ferromagnetic and a nonmagnetic part of a metallic wire, suspended between two electrodes, is shown to tort the wire when a current is driven through it. In order to enhance…
The synergy of ferroicity with altermagnetism offers a novel platform for designing multifunctional altermagnetic-spintronic device technology. In this work, we propose a mechanism to achieve nonvolatile electrical manipulation of spin and…
A model for single-domain uniaxial ferromagnetic particles with high anisotropy, the Ising model, is studied. Recent experimental observations have been made of the probability that the magnetization has not switched. Here an approach is…
Synchronization and chaos caused by alternating current and microwave field in a spin torque oscillator consisting of a perpendicularly magnetized free layer and an in-plane magnetized reference layer is comprehensively studied…
A conventional superconductor sandwiched between two ferromagnets can maintain coherent equilibrium spin current. This spin supercurrent results from the rotation of odd-frequency spin correlations induced in the superconductor by the…
We have fabricated nanoscale magnetic tunnel junctions (MTJs) with an additional fixed magnetic layer added above the magnetic free layer of a standard MTJ structure. This acts as a second source of spin-polarized electrons that, depending…
We present a relativistic description of electron vortex beams in a homogeneous magnetic field. Including spin from the beginning reveals that spin-polarized electron vortex beams have a complicated azimuthal current structure, containing…
By means of local ion implantation, we investigated the influence of lateral interface on current-induced magnetic switching by spin-orbit torque in a perpendicularly magnetized Pt/Co/Ta multilayer. The experimental results show that, in…
In spite of the absence of a macroscopic magnetic moment, an anti-ferromagnet is spin-polarized on an atomic scale. The electric current passing through a conducting anti-ferromagnet is polarized as well, leading to spin-transfer torques…