Related papers: Nonuniform switching ferromagnetic layers by spin …
We proposed a novel and simple multilayer structure to realize the deterministic switching of perpendicularly magnetized layers (Co in our work) by spin orbital torque from the spin Hall Effect in this paper. A pinned layer is introduced,…
We present theoretical description of the precessional switching processes induced by simultaneous application of spin-polarized current and external magnetic field to antiferromagnetic component of the "pinned" layer. We found stability…
An effect is considered of alternating (high-frequency) current on the spin-valve type magnetic junction configuration. The stability with respect to small fluctuations is investigated in the macrospin approximation. When the current…
We study the magnetic damping in the simplest of synthetic antiferromagnets, i.e. antiferromagnetically exchange-coupled spin valves in which applied magnetic fields tune the magnetic configuration to become noncollinear. We formulate the…
Spin spirals form inside the magnetic layers of antiferromagnetic and noncollinearly-coupled magnetic multilayers in the presence of an external magnetic field. This spin structure can be modeled to extract the direct exchange stiffness of…
Magnetic nanodevices usually include a free layer whose configuration can be changed by spin-polarized current via the spin transfer effect, and a fixed reference layer. Here, we demonstrate that the roles of the free and the reference…
We discuss a possible mechanism of the spin-transfer induced oscillations of a vortex in the free layer of spin-valve nanostructures, in which the polarizer layer has a planar magnetization. We demonstrate that if such planar polarizer is…
We investigate current-induced magnetization switching for a multilayer structure that allows a reduced switching current while maintaining high thermal stability of the magnetization. The structure consists of a perpendicular polarizer, a…
Spin-orbit coupling in ferromagnets gives rise to the anomalous Hall effect and the anisotropic magnetoresistance, both of which can be used to create spin-transfer torques in a similar manner as the spin Hall effect. In this paper we show…
Non-uniform current distributions of spin valves with disk shaped free layers are investigated. In the context of spin valves, the vortex state, which is the ground-state in many disk shaped magnetic bodies, allows for distinct parallel…
Interfacial ferroelectricity offers a promising platform for ultrafast, low-power memory devices. While previous studies have demonstrated the importance of domain wall in polarization switching, the coexistence of various domain wall types…
We theoretically study the spin-polarized transport through a single-molecule magnet, which is weakly coupled to ferromagnetic leads, by means of the rate-equation approach. We consider both the ferromagnetic and antiferromagnetic…
We theoretically consider a Josephson junction formed by a ferromagnetic spacer with a strong spin-orbit interaction or a magnetic spin valve, i.e., a bilayer with one static and one free layer. Electron spin transport facilitates a…
Magnetic domain walls can be moved by spin-polarized currents due to spin-transfer torques. This opens the possibility to use them in spintronic memory devices as, e.g., in racetrack storage. Naturally, in miniaturized devices domain walls…
This paper describes a numerical experiment of magnetization switching driven by spin-polarized current in high-TMR magnetic tunnel junctions (TMR>100%). Differently from other works, the current density distribution throughout the…
The dynamics of the magnetization of the free layer in a spin-torque nano oscillator (STNO) influenced by a noncollinear alignment between the magnetizations of the free and pinned layers due to an interlayer exchange coupling has been…
The resistivity of disordered metallic layer sandwiched by two ferromagnetic layers at low-temperature is investigated theoretically. It is shown that the magnetic field acting at the interface does not affect the classical Boltzmann…
The control of magnetic domain walls is essential for the magnetic-based memory and logic applications. As an elementary excitation of magnetic order, spin wave is capable of moving magnetic domain walls just as the conducting electric…
The lack of certain crystalline symmetries in strong spin-orbit-coupled non-magnetic materials allows for the existence of uncoventional spin Hall responses, with electrically generated transverse spin currents possessing collinear flow and…
Nanoscale superlattices with uniaxial ferromagnetic layers antiferromagnetically coupled through non-magnetic spacers are recently used as components of magnetoresistive and recording devices. In the last years intensive experimental…