Related papers: Dissipationless Spin Current in Anisotropic p-Dope…
Recent theories predict dissipationless spin current induced by an electric field in doped semiconductors. Nevertheless, the charge current is still dissipative in these systems. In this work, we theoretically predict the dissipationless…
It was proposed recently by Murakami et al. [Science \textbf{301}, 1348(2003)] that in a large class of $p$-doped semiconductors, an applied electric field can drive a quantum dissipationless spin current in the direction perpendicular to…
We describe a new effect in semiconductor spintronics that leads to dissipationless spin-currents in paramagnetic spin-orbit coupled systems. We argue that in a high mobility two-dimensional electron system with substantial Rashba…
The carrier spin and impurity spin densities in diluted magnetic semiconductors are considered using a semiclassical approach. Equations of motions for the spin densities and the carrier spin current density in the paramagnetic phase are…
While microscopic laws of physics are invariant under the reversal of the arrow of time, the transport of energy and information in most devices is an irreversible process. It is this irreversibility that leads to intrinsic dissipations in…
We present a theoretical study of diluted magnetic semiconductors that treats the local sp-d exchange interaction J between the itinerant carriers and the Mn d electrons within a realistic band structure and goes beyond previous mean-field…
The spin Hall effect depends crucially on the intrinsic spin-orbit coupling of the energy band. Because of the smaller spin-orbit coupling in silicon, the spin Hall effect is expected to be much reduced. We show that the electric field in…
When a spin-splitting field is introduced to a thin film superconductor, the spin currents polarized along the field couples to energy currents that can only decay via inelastic scattering. We study spin and energy injection into such a…
Theoretical calculations predict the dissipationless circulating current induced by a spin defect in a two-dimensional electron gas with spin-orbit coupling. The shape and spatial extent of these dissipationless circulating currents depend…
Relativistic band theoretical calculations reveal that intrinsic spin Hall conductivity in hole-doped archetypical semiconductors Ge, GaAs and AlAs is large $[\sim 100 (\hbar/e)(\Omega cm)^{-1}]$, showing the possibility of spin Hall effect…
We investigate the intrinsic spin Hall effect in a quantum well semiconductor doped with magnetic impurities, as a means to manipulate the carriers' spin. Using a simple Hamiltonian with Rashba spin-orbit coupling and exchange interactions,…
We investigate the spin-Hall effect of both electrons and holes in semiconductors using the Kubo formula in the correct zero-frequency limit taking into account the finite momentum relaxation time of carriers in real semiconductors. This…
Device concepts in semiconductor spintronics make long spin lifetimes desirable, and the requirements put on spin control by schemes of quantum information processing are even more demanding. Unfortunately, due to spin-orbit coupling…
We propose an all-electrical nanoscopic structure where {\em pure} spin current is induced in the transverse voltage probes attached to {\em quantum-coherent} one-dimensional ring when conventional unpolarized charge current is injected…
Spin currents that flow perpendicular to the electric field direction are generic in metals and doped semiconductors with spin-orbit coupling. It has recently been argued that the spin Hall conductivity can be dominated by an intrinsic…
The intrinsic spin Hall effect in semiconductors has developed to a remarkably lively and rapidly growing branch of research in the field of semiconductor spintronics. In this article we give a pedagogical overview on both theoretical and…
We study the spin and charge dynamics of electrons in n-doped II--VI semiconductor multiple quantum wells when one or more quantum wells are doped with Mn. The interplay between strongly nonlinear inter-well charge transport and the large…
Following our previous work [S. Murakami, N. Nagaosa, S. C. Zhang, Science 301, 1348 (2003)] on the dissipationless quantum spin current, we present an exact quantum mechanical calculation of this novel effect based on the linear response…
It is proposed that the new generation of spintronics should be ideally massless and dissipationless for the realization of ultra-fast and ultra-low-power spintronic devices. We demonstrate that the spin-gapless materials with linear energy…
Spin Coulomb drag (SCD) constitutes an intrinsic source of dissipation for spin currents in metals and semiconductors. We discuss the power loss due to SCD in potential spintronics devices and analyze in detail the associated damping of…