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Related papers: A possible route to grow a (Mn:Si(1-x)Gex)-based d…

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Using density-functional theory within the generalized gradient approximation, we show that Si-based heterostructures with 1/4 layer $\delta$-doping of {\em interstitial} Mn (Mn$_{\mathrm int}$) are half-metallic. For Mn$_{\mathrm int}$…

Materials Science · Physics 2007-05-23 Hua Wu , Peter Kratzer , Matthias Scheffler

We have studied the electronic structure of the diluted magnetic semiconductor Ga$_{1-x}$Mn$_{x}$N ($x$ = 0.0, 0.02 and 0.042) grown on Sn-doped $n$-type GaN using photoemission and soft x-ray absorption spectroscopy. Mn $L$-edge x-ray…

While most calculations on the properties of the ferromagnetic semiconductor GaAs:Mn have focussed on isolated Mn substituting the Ga site (Mn$_{Ga}$), we investigate here whether alternate lattice sites are favored and what the magnetic…

Condensed Matter · Physics 2009-11-10 Priya Mahadevan , Alex Zunger

We have performed ab initio calculations within the density-functional theory for Ga_{1-x}Mn_xAs diluted semiconductors. Total energy results unambiguously show that a quasi-localized down-spin hole, with strong p-like character, surrounds…

Materials Science · Physics 2007-05-23 A. J. R. da Silva , A. Fazzio , R. R. dos Santos , L. E. Oliveira

We perform a theoretical study, using {\it ab initio} total energy density-functional calculations, of the effects of disorder on the $Mn-Mn$ exchange interactions for $Ga_{1-x}Mn_xAs$ diluted semiconductors. For a 128 atoms supercell, we…

Materials Science · Physics 2009-11-11 Antonio J. R. da Silva , A. Fazzio , Raimundo R. dos Santos , Luiz E. Oliveira

We present a theory of interstitial Mn in Mn-doped ferromagnetic semiconductors. Using density-functional theory, we show that under the non-equilibrium conditions of growth, interstitial Mn is easily formed near the surface by a simple…

Materials Science · Physics 2009-11-07 Steven C. Erwin , A. G. Petukhov

IV-VI diluted magnetic semiconductor Ge1-xCrxTe layers up to x=0.1 were grown on SrF2 substrates by molecular beam epitaxy. In site reflection high-energy electron diffraction shows a streaky pattern with sixfold symmetry in the plane for…

Materials Science · Physics 2016-03-01 Y. Fukuma , H. Asada , S. Senba , T. Koyanagi

Density-functional studies of the electron states in the dilute magnetic semiconductor GaN:Mn reveal major differences for the case of the Mn impurity at the substitutional site Mn_Ga versus the interstitial site Mn_I. The splitting of the…

Materials Science · Physics 2009-11-10 Z. S. Popovic , S. Satpathy , W. C. Mitchel

We report the formation of Mn-rich regions at the interface of Co2FexMn1-xSi thin films grown on GaAs substrates by molecular beam epitaxy (MBE). Scanning transmission electron microscopy (STEM) with electron energy loss (EEL) spectrum…

Using first-principles density functional theory method, we have investigated the distribution and magnetism of doped Mn atoms in the vicinity of the 3 (112) grain boundary in Ge. We find that at low concentration, the substitutional sites…

Materials Science · Physics 2010-05-24 W. Wang , S. L. Zhang , Z. X. Tian , W. Xiao

We report on the MBE-growth and magnetotransport properties of p-type BeMnTe, a new ferromagnetic diluted magnetic semiconductor. BeMnTe thin film structures can be grown almost lattice matched to GaAs for Mn concentrations up to 10% using…

Materials Science · Physics 2009-11-07 L. Hansen , D. Ferrand , G. Richter , M. Thierley , V. Hock , N. Schwarz , G. Reuscher , G. Schmidt , A. Waag , L. W. Molenkamp

A combination of high-resolution x-ray diffraction and a new technique of x-ray standing wave uorescence at grazing incidence is employed to study the structure of (Ga,Mn)As diluted magnetic semiconductor and its changes during post-growth…

Materials Science · Physics 2009-11-11 V. Holy , Z. Matej , O. Pacherova , V. Novak , M. Cukr , K. Olejnik , T. Jungwirth

In this paper we investigate theoretically the ground state NiAs-type structure of MnAs and we compare the magnetic and structural properties with an hypothetical zincblende structure. A zincblende structure can be obtained, in principle,…

Mesoscale and Nanoscale Physics · Physics 2025-06-10 Stefano Sanvito , Nicola A. Hill

We study energetic, magnetic, and electronic properties of diluted substitutional Mn-pairs on the reconstructed $(001)$ GaAs surfaces. The studies are based on first-principles calculations in the framework of the density functional theory.…

Materials Science · Physics 2017-03-29 M. Birowska , C. Śliwa , J. A. Majewski

We use the density-functional theory to calculate the total energy of mixed crystals (Ga,Mn)As with a small concentration of various donors. We find that the formation energy of Mn depends strongly on the partial concentrations of Mn in the…

Materials Science · Physics 2007-05-23 J. Masek , I. Turek , J. Kudrnovsky , F. Maca , V. Drchal

The future of spintronic and semiconductor applications demands materials with tailored electronic and magnetic properties. This study uses density functional theory to investigate the electronic structure of the half-metallic compound…

Materials Science · Physics 2025-07-08 Sujoy Datta , Prashant Singh

The electronic structure of doped Mn in (Ga,Mn)As is studied by resonant inelastic X-ray scattering (RIXS). From configuration-interaction cluster-model calculations, the line shapes of the Mn $L_3$ RIXS spectra can be explained by $d$-$d$…

Materials Science · Physics 2015-08-06 M. Kobayashi , H. Niwa , Y. Takeda , A. Fujimori , Y. Senba , H. Ohashi , A. Tanaka , S. Ohya , P. N. Hai , M. Tanaka , Y. Harada , M. Oshima

We present a spin density functional theory (DFT) study for semiconducting ScN and Mn-substituted ScN. Their structural and magnetic properties have been investigated using the all electrons augmented spherical wave method (ASW) with a…

Materials Science · Physics 2009-09-10 Abdesalem Houari , Samir. F. Matar , Mohamed A. Belkhir

We have undertaken a study of diluted magnetic semiconductors $Ga_{1-x}Mn_{x}N$ and $Ga_{1-x}Cr_{x}N$ with $x=0.0625, 0.125$, using the all electron linearized augmented plane wave method (LAPW) for different configurations of Mn as well as…

Materials Science · Physics 2009-11-11 Nandan Tandon , G P Das , Anjali Kshirsagar

Recently, the magnetic moment/Mn, $M$, in Mn$_x$Si$_{1-x}$ was measured to be 5.0 $\mu_B$/Mn, at $x$ =0.1%. To understand this observed $M$, we investigate several Mn$_x$Si$_{1-x}$ models of alloys using first-principles density functional…

Materials Science · Physics 2012-01-24 Michael Shaughnessy , C. Y. Fong , Ryan Snow , Kai Liu , John Pask , Lin H. Yang
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