Related papers: Tunneling spin-galvanic effect
Spin transport typically relies on direct manipulation of the spin degree of freedom via magnetic fields, spin-orbit coupling, or engineered spin-dependent potentials. We show theoretically that directional spin currents can arise in a…
We investigate theoretically electrical spin injection at a Schottky contact between a spin-polarized electrode and a non-magnetic semiconductor. Current and electron density spin-polarizations are discussed as functions of barrier energy…
We investigate the tunnelling between an electronic gas with two different velocities $V_\uparrow \neq V_\downarrow$ and a regular metal. We find that at the interface between the two systems that the tunnelling conductance for spin up and…
Spin-polarized transport is investigated in normal metal-superconductor (NS) junctions as a function of interface transmissivity as well as temperature when the density of states of a superconductor is Zeeman-split in response to an…
A minority-spin resonant state at the Fe/GaAs(001) interface is predicted to reverse the spin polarization with voltage bias of electrons transmitted across this interface. Using a Green's function approach within the local spin density…
A normally incident light of linear polarization injects a pure spin current in a strip of 2-dimensional electron gas with spin-orbit coupling. We report observation of an electric current with a butterfly-like pattern induced by such a…
We introduce a previously unknown spin-related transport phenomenon, consisting in a transformation (swapping) of spin currents, in which the spin direction and the direction of flow are interchanged. Swapping is due to the spin-orbit…
A scheme of spin diode is proposed that uses a step-like quantum wire with Rashba spin-orbit interaction, connected to two leads with different width. It is shown that a very large vertical spin-polarized current can be generated when…
We describe a new means for electrically creating spin polarization in semiconductors. In contrast to spin injection of electrons by tunneling through a reverse-biased Schottky barrier, we observe spin accumulation at the…
It is shown that absorption of circularly polarized infrared radiation due to intraband (Drude-like) transitions in n-type bulk semiconductors and due to intra-subband or inter-subband transitions in quantum well (QW) structures results in…
We developed the theory of elastic electron tunneling through a potential barrier driven by a strong high-frequency electromagnetic field. It is demonstrated that the driven barrier can be considered as a stationary two-barrier potential…
Within a wide class of ferromagnetic and antiferromagnetic systems, quantum tunneling of magnetization direction is spin-parity dependent: it vanishes for magnetic particles with half-integer spin, but is allowed for integer spin. A…
We show that spin polarization of electrons in nonmagnetic semiconductors near specially tailored ferromagnet-semiconductor junctions can achieve 100%. This effect is realized even at moderate spin injection coefficients of the contact when…
Using the Keldysh formalism the tunneling current through a hybrid structure where a confined magnetic insulator (I) is sandwiched between two non-magnetic leads is calculated. The leads can be either normal metals (M) or superconductors…
Spin injection and detection in silicon is a difficult problem, in part because the weak spin-orbit coupling and indirect gap preclude using standard optical techniques. We propose two ways to overcome this difficulty, and illustrate their…
The spin-orbit coupling may generate spin transverse force on moving electron spin, which gives a heuristic picture for the quantum transverse transport of electron. A relation between the spin and anomalous Hall conductance and spin force…
We describe theoretically the process of multi-beam reflection in a two-dimensional electron system with a lateral potential barrier. Due to spin-orbital interaction, the reflection process leads to the formation of three beams with…
We consider electron tunneling from a nonmagnetic $n$-type semiconductor ($n$-S) into a ferromagnet (FM) through a very thin forward-biased Schottky barrier resulting in efficient extraction of electron spin from a thin $n$-S layer near…
In disordered systems, the hopping conductivity regime is usually realized at low temperatures where spin-related phenomena differ strongly from the case of delocalized carriers. We develop the unified microscopic theory of current induced…
We study the tunneling of chiral electrons in graphene through a region where the electronic spectrum changes from the usual linear dispersion to a hyperbolic dispersion, due to the presence of a gap. It is shown that contrary to the…