Related papers: Corner overgrowth: Bending a high mobility two-dim…
We report on the fabrication and characterization of patterned high-mobility two-dimensional electron gases (2DEG) formed on SrTiO$_3$ (STO) substrate surfaces by hydrogen plasma exposure. The resulting devices consistently showed high…
We provide a quantum mechanical description of phonon amplification in a heterostructure consisting of a two-dimensional electron gas (2DEG) stacked on top of a piezoelectric material. An applied drift voltage effectively creates a…
We have found that Fermi contours of a two-dimensional electron gas at $\rmGaAs/Al_xGa_{1-x}As$ interface deviate from a standard circular shape under the combined influence of an approximately triangular confining potential and the strong…
Questions on the nature of edge reconstruction and "where does the current flow" in the quantum Hall effect (QHE) have been debated for years. Moreover, the recent observation of proliferation of "upstream" neutral modes in the fractional…
Even-denominator fractional quantum Hall (FQH) states, such as 5/2 and 7/2, have been well known in a two-dimensional electron gas (2DEG) for decades and are still investigated as candidates of non-Abelian statistics. In this paper, we…
In quantum mechanics, asymptotic degeneracy is often considered in the context of a particle in a symmetric double-well potential, and is the phenomenon whereby pairs of energy levels come together to form doubly degenerate levels in…
The study of electron transport in low-dimensional systems is of importance, not only from a fundamental point of view, but also for future electronic and spintronic devices. In this context heterostructures containing a two-dimensional…
The motion of electrons under homogeneously applied electric fields in low-dimensional systems with non-zero off-diagonal effective mass (ODEM) is studied. The equation describing the time evolution of a probability coefficient of finding…
Two-dimensional electron systems (2DESs) in functional oxides are promising for applications, but their fabrication and use, essentially limited to SrTiO$_3$-based heterostructures, are hampered by the need of growing complex oxide…
We have investigated nucleation of merons in double quantum dots when a lateral distortion with a reflection symmetry is present in the confinement potential. We find that merons can nucleate both inside and at the edge of the dots. In…
Ultrathin lateral heterostructures of monolayer MoS2 and WS2 have successfully been realized with the metal-organic chemical vapor deposition method. Atomic-resolution HAADF-STEM observations have revealed that the junction widths of…
Electronic and optical properties of a mesoscopic heterostructure of a two-dimensional quantum ring composed of Gallium Arsenide (GaAs) semiconductors are investigated. Using the confinement potential proposed by Tan-Inkson to describe the…
We present a contactless method that is capable of characterizing a high electron mobility transistor heterostructure at the wafer stage, right after its growth, before any production process has been attempted, to provide the equilibrium…
Exotic phenomenon can be achieved in quantum materials by confining electronic states into two dimensions. For example, relativistic fermions are realised in a single layer of carbon atoms, the quantized Hall effect can result from…
We report a backgated InAs/GaSb double quantum well device grown on GaSb substrate. The use of the native substrate allows for high materials quality with electron mobility in excess of 500,000 cm2/Vs at sheet charge density of 8x1011 cm-2…
The quantum Hall effect is investigated in a high-mobility two-dimensional electron gas on the surface of a cylinder. The novel topology leads to a spatially varying filling factor along the current path. The resulting inhomogeneous…
Self-assembled InAs quantum dots (QDs) grown on GaAs(001) surface by molecular beam epitaxy under continuous and growth-interruption modes exhibit two families of QDs, quasi-3D (Q3D) and 3D QDs, whose volume density evolution is…
In two-dimensional (2D) electron systems, an off-resonant high-frequency circularly polarized electromagnetic field can induce the quasi-stationary bound electron states of repulsive scatterers. As a consequence, the resonant scattering of…
We analyze fluctuation of the layer thicknesses and its influence on the strain state of (In,Ga)As/(Al,Ga)As micro-tubes containing quantum well structures. In those structures a curved high-mobility two-dimensional electron gas (HM2DEG) is…
High mobility two-dimensional electron gases (2DEGs) underpin today's silicon based devices and are of fundamental importance for the emerging field of oxide electronics. Such 2DEGs are usually created by engineering band offsets and charge…