Related papers: Two-dimensional hole precession in an all-semicond…
Nonreciprocal transport refers to charge transfer processes that are sensitive to the bias polarity. Until recently, nonreciprocal transport was studied only in dissipative systems, where the nonreciprocal quantity is the resistance. Recent…
Electron spins in an InGaAs semiconductor quantum well are used as a magnetometer of magnetic stray-fields from patterned Fe stripes. Using time-resolved Faraday rotation, the coherent precession of quantum-well spins in the inhomogeneous…
It is shown that spin Hall effect creates uniform spin polarization of electrons in semiconductor with a linear in the momentum spin splitting of conduction band. In turn, the profile of the non-uniform spin polarization accumulated at the…
The advent of black phosphorus field-effect transistors (FETs) has brought new possibilities in the study of two-dimensional (2D) electron systems. In a black phosphorus FET, the gate induces highly anisotropic 2D electron and hole gases.…
Planar CdBxF2-x - p-CdF2 - CdBxF2-x sandwich nanostructures prepared on the surface of the n-type CdF2 bulk crystal are studied to register the spin transistor and quantum spin Hall effects. The current-voltage characteristics of the…
We use a Ge-Si core-shell nanowire to realise a Josephson field-effect transistor with highly transparent contacts to superconducting leads. By changing the electric field we gain access to two distinct regimes not combined before in a…
Advanced microelectronics in the future may require semiconducting channel materials beyond silicon. Two-dimensional (2D) semiconductors, characterized by their atomically thin thickness, hold immense promise for high-performance electronic…
Stannous selenide is a layered semiconductor that is a polar analogue of black phosphorus, and of great interest as a thermoelectric material. Unusually, hole doped SnSe supports a large Seebeck coefficient at high conductivity, which has…
We compare and contrast magneto-transport oscillations in the fully quantum (single-electron coherent) and classical limits for a simple but illustrative model. In particular, we study the induced magnetization and spin current in a…
Recently, dissipationless spin current has been predicted for the p-doped semiconductors with spin-orbit coupling. Here we investigate the effect of spherical symmetry breaking on the dissipationless spin current, and obtain values of the…
Low-temperature in-plane magnetotransport measurements have been performed on adsorbate-induced electron systems formed at in-situ cleaved surfaces of p-type InAs. The Ag-coverage dependence of the surface electron density strongly supports…
The conventional unpolarized current injected into a {\em quantum-coherent} semiconductor ring attached to two external leads can be modulated from perfect conductor to perfect insulator limit via Rashba spin-orbit (SO) coupling. This…
A theory of spin-polarized electron transport in ferromagnet/semiconductor heterostructures, based on a unified semiclassical description of ballistic and diffusive transport in semiconductor structures, is developed. The aim is to provide…
Experimental evidence of electron spin precession during travel through the phosphorus-doped Si channel of an all-electrical device simultaneously indicates two distinct processes: (i) short timescales (~50ps) due to purely conduction-band…
We consider the spin-orbit-induced spin Hall effect and spin swapping in diffusive superconductors. By employing the non-equilibrium Keldysh Green's function technique in the quasiclassical approximation, we derive coupled transport…
Based on a rigorous quantum-kinetic approach, spin-charge coupled drift-diffusion equations are derived for a strongly confined two-dimensional hole gas. An electric field leads to a coupling between the spin and charge degrees of freedom.…
We study the interplay of Klein tunneling (= interband tunneling) between n-doped and p-doped regions in graphene and Andreev reflection (= electron-hole conversion) at a superconducting electrode. The tunneling conductance of an n-p-n…
A compact analytical model is developed for the mobile charge density of polar multiple channel field effect transistors. Two dimensional electron and hole gases can be potentially induced by spontaneous and piezoelectric polarization in…
We report a first principles theoretical investigation of quantum transport in monolayer WSe2 field effect transistor (FET). Due to a strong spin-orbit interaction (SOI) and the atomic structure of the two-dimensional (2D) lattice,…
Two-dimensional hole gases in semiconductor quantum wells are promising platforms for spintronics and quantum computation but suffer from the lack of the $\bf{k}$-linear term in the Rashba spin-orbit coupling (SOC), which is essential for…