Related papers: Field-Effect Transistors on Tetracene Single Cryst…
We report the angle dependent high field (up to 140kOe) magneto transport of Bi2Te3 single crystals, a well-known topological insulator. The crystals were grown from melt of constituent elements via solid state reaction route by self-flux…
Graphene is considered to be a promising candidate for future nano-electronics due to its exceptional electronic properties. Unfortunately, the graphene field-effect-transistors (FETs) cannot be turned off effectively due to the absence of…
Self-heating in surrounding gate transistors can degrade its on-current performance and reduce lifetime. If a transistor heats/cools with time-constants less than the inverse of the operating frequency, a predictable, frequency-independent…
The metal-graphene contact resistance is one of the major limiting factors toward the technological exploitation of graphene in electronic devices and sensors. A high contact resistance can be detrimental to device performance and spoil the…
Crystalline organic semiconductors, bonded by weak van der Waals forces, exhibit macroscopic properties that are very similar to those of inorganic semiconductors. While there are many open questions concerning the microscopic nature of…
We present the results of measurements of the thermal and electrical conductivity in the basal plane of single-crystalline MgB_2 between 2 and 300 K. The analysis of the temperature dependence of the thermal conductivity gives supporting…
We report a naturally-occurring two-dimensional material (graphene that can be viewed as a gigantic flat fullerene molecule, describe its electronic properties and demonstrate all-metallic field-effect transistor, which uniquely exhibits…
We report self flux growth and characterization of FeTe1-xSx (x= 0.00 to 0.25) single crystal series. Surface X-ray diffraction (XRD) exhibited crystalline nature with growth in (00l) plane. Micro-structural (electron microscopy) images of…
We report anomalous physical properties of single-crystalline FeSi over a wide temperature range 1.8-400 K. X-ray diffraction, specific heat, and magnetization measurements indicate that the FeSi crystals synthesized in this study are of…
Magnetocaloric effect (MCE) was investigated in the single crystal of CsGd(MoO$_4$)$_2$ in the temperature range from 2 to 30 K and fields up to 5 T applied along the easy and hard magnetic axis. The analysis of specific heat and…
Two-dimensional materials are considered for future quantum devices and are usually produced by extensive methods like molecular beam epitaxy. We report on the fabrication of field-effect transistors using individual ultra-thin lead sulfide…
In organic field effect transistors (FETs), charges move near the surface of an organic semiconductor, at the interface with a dielectric. In the past, the nature of the microscopic motion of charge carriers -that determines the device…
Electron tunneling in ferromagnetic single-electron transistors is considered theoretically in the sequential tunneling regime. A new formalism is developed, which operates in a two-dimensional space of states, instead of one-dimensiona…
Materials able to rapidly switch between thermally conductive states by external stimuli such as electric or magnetic fields can be used as all-solid-state thermal switches and open a myriad of applications in heat management, power…
The results of a comprehensive study of MnSb$_2$Te$_4$ single crystals are presented. The structure, Raman spectra, low-temperature transport, Hall effect, magnetization, and magnetic susceptibility are studied. It was established that the…
The use of SrTiO$_3$ dielectrics as high-permittivity insulator in organic thin film field effect transistors (FET) is evaluated. Field-effect transistors with sputtered SrTiO$_3$ and copper-phthalocyanine (CuPc) as semiconducting layer…
We report successful growth of flux free large single crystals of superconducting FeSe1/2Te1/2 with typical dimensions of up to few cm. The AC and DC magnetic measurements revealed the superconducting transition temperature (Tc) value of…
The anisotropic physical properties of single crystals of orthorhombic PtSn4 are reported for magnetic fields up to 140 kOe, applied parallel and perpendicular to the crystallographic b-axis. The magnetic susceptibility has an approximately…
We demonstrate non-volatile, n-type, back-gated, MoS$_{2}$ transistors, placed directly on an epitaxial grown, single crystalline, PbZr$_{0.2}$Ti$_{0.8}$O$_{3}$ (PZT) ferroelectric. The transistors show decent ON current (19…
Here, we present a temperature ($T$) dependent comparison between field-effect and Hall mobilities in field-effect transistors based on few-layered WSe$_2$ exfoliated onto SiO$_2$. Without dielectric engineering and beyond a $T$-dependent…