Related papers: Induced currents, frozen charges and the quantum H…
A novel model of complex quantum harmonic oscillator is found to account for the observed Fractional quantum Hall effect (FQHE). The sequences of the observed FQHE conductivity and charge are explained. The two sequences are found to…
The fractional quantum Hall effect (FQHE) of topological surface-state particles under a tilted strong magnetic field is theoretically studied by using the exact diagonalization method. The Haldane's pseudopotentials for the Coulomb…
The quantum Hall effect (QHE) is traditionally considered a purely two-dimensional (2D) phenomenon. Recently, a three-dimensional (3D) version of the QHE has been reported in the Dirac semimetal ZrTe5. It was proposed to arise from a…
Using a new MBE growth technique, we fabricate a two-dimensional electron system which is bent around an atomically sharp 90 degree corner. In the quantum Hall regime under tilted magnetic fields, we can measure equilibration between both…
Quantum anomalous Hall effect (QAHE) is a fundamental transport phenomenon in the field of condensed-matter physics. Without external magnetic field, spontaneous magnetization combined with spin-orbit coupling give rise to a quantized Hall…
The quantum Hall effect, which exhibits a number of unusual properties, is studied in a gated 1000-nm-thick HgTe film, nominally a three-dimensional system. A weak zero plateau of Hall resistance, accompanied by a relatively small value of…
It is well known that the Fractional Quantum Hall Effect (FQHE) may be effectively represented by a Chern-Simons theory. In order to incorporate QH Skyrmions, we couple this theory to the topological spin current, and include the Hopf term.…
Quantum Hall effect (QHE), the ground to construct modern conceptual electronic systems with emerging physics, is often much influenced by the interplay between the host two-dimensional electron gases and the substrate, sometimes predicted…
The fractional quantum Hall effect (FQHE) stands as a quintessential manifestation of an interacting two-dimensional electron system. One of FQHE's most fundamental characteristics is the energy gap separating the incompressible ground…
Spin splitting in the integer quantum Hall effect is investigated for a series of Al$_{x}$Ga$_{1-x}$As/GaAs heterojunctions and quantum wells. Magnetoresistance measurements are performed at mK temperature to characterize the electronic…
Evidence of the Ettingshausen effect in the breakdown regime of the integer quantum Hall effect has been observed in a GaAs/AlGaAs two-dimensional electron system. Resistance of micro Hall bars attached to both edges of a current channel…
We report an investigation of quantum Hall induced currents by simultaneous measurements of their magnetic moment and their effect on the conductance of a quantum point contact (QPC). Features in the magnetic moment and QPC resistance are…
Microscopic processes giving the energy gain and loss of a two-dimensional electron system in long-range potential fluctuations are studied theoretically at the breakdown of the quantum Hall effect in the case of even-integer filling…
The fractional quantum hall effect (FQHE) is a milestone of modern day physics, its disovery paved the way for the study of fractional charges which do not obey abelian physics. However, all FQHE require an external magnetic field in order…
We present a two dimensional model of IQHE in accord with the cyclotron motion. The quantum equation of the QHE curve and a new definition of filling factor are also given.
A general mechanism is presented by which topological physics arises in strongly correlated systems without flat bands. Starting from a charge transfer insulator, topology emerges when the charge transfer energy between the cation and anion…
Low frequency AC-measurements are commonly used to determine the voltage and currents through mesoscopic devices. We calculate the effect of the alternating Hall voltage on the recorded time-averaged voltage in the presence of a top-gate…
We find that mesoscopic conductance fluctuations in the quantum Hall regime in silicon MOSFETs display simple and striking patterns. The fluctuations fall into distinct groups which move along lines parallel to loci of integer filling…
We theoretically demonstrate that the in-plane magnetization induced quantum anomalous Hall effect (QAHE) can be realized in atomic crystal layers of group-V elements with buckled honeycomb lattice. We first construct a general…
It is well known that the quantum Hall conductivity in the presence of constant magnetic field is expressed through the topological TKNN invariant. The same invariant is responsible for the intrinsic anomalous quantum Hall effect (AQHE),…