Related papers: Gate control of spin dynamics in III-V semiconduct…
Spin qubits in germanium gate-defined quantum dots have made considerable progress within the last few years, partially due to their strong spin-orbit coupling and site-dependent $g$-tensors. While this characteristic of the $g$-factors…
We theoretically model the spin-orbit interaction in silicon quantum dot devices, relevant for quantum computation and spintronics. Our model is based on a modified effective mass approach with spin-valley boundary conditions, derived from…
Berry phase in semiconductor quantum dots (QDs) can be induced by moving the dots adiabatically in a closed loop with the application of the distortion potential in the lateral direction. We show that the Berry phase is highly sensitive to…
We analyze orbital effects of an in-plane magnetic field on the spin structure of states of a gated quantum dot based in a two-dimensional electron gas. Starting with a $k \cdot p$ Hamiltonian, we perturbatively calculate these effects for…
Silicon quantum dots are considered an excellent platform for spin qubits, partly due to their weak spin-orbit interaction. However, the sharp interfaces in the heterostructures induce a small but significant spin-orbit interaction which…
g-factor tuning of electrons in quantum dots is studied as function of in-plane and perpendicular magnetic fields for different confinements. Rashba and Dresselhaus effects are considered, and comparison is made between wide- and narrow-gap…
The design of scalable quantum computers will benefit from predictive models for qubit performance that consider the design and layout of the qubit devices. This approach, has recently been adopted for superconducting qubits, but has…
Spin qubits composed of either one or three electrons are realized in a quantum dot formed at a Si/SiO_2-interface in isotopically enriched silicon. Using pulsed electron spin resonance, we perform coherent control of both types of qubits,…
The dependence of the g-factors of semiconductor donors on applied electric and magnetic fields is of immense importance in spin based quantum computation and in semiconductor spintronics. The donor g-factor Stark shift is sensitive to the…
We study the anisotropic orbital effect in the electric field tunability of the phonon induced spin-flip rate in quantum dots (QDs). Our study shows that anisotropic gate potential enhances the spin-flip rate and reduces the level crossing…
We investigate theoretically how the spin-orbit Dresselhaus and Rashba effects influence the electronic structure of quasi-one-dimensional semiconductor quantum dots, similar to those that can be formed inside semiconductor nanorods. We…
The knowledge of electron and hole g-factors, their control and engineering are key for the usage of the spin degree of freedom for information processing in solid state systems. The electronic g-factor will be materials dependent, the…
The magnetic properties of hole quantum dots in Ge are sensitive to their shape due to the interplay between strong spin-orbit coupling and confinement. We show that the split-off band, surrounding SiGe layers, and hole-hole interactions…
Exciting progress towards spin-based quantum computing has recently been made with qubits realized using nitrogen-vacancy (N-V) centers in diamond and phosphorus atoms in silicon, including the demonstration of long coherence times made…
We study the variation in the Land$\acute{\text{e}}$ g-factor of electron spins induced by both anisotropic gate potentials and magnetic fields in InAs quantum dots for possible implementation towards solid state quantum computing. In this…
The large spin-orbit coupling in the valence band of group IV semiconductors provides an electric field knob for spin-qubit manipulation. This fact can be exploited with acceptor based qubits. Spin manipulation of holes bound to acceptors…
The rapid progress of hole spin qubits in group IV semiconductors has been driven by their potential for scalability. This is owed to the compatibility with industrial manufacturing standards, as well as the ease of operation and…
Gate geometry and bias asymmetry can be used to engineer spin dynamics in gate-defined Ge hole quantum dots by reshaping the confinement potential and driving transitions between distinct confinement regimes. In this work, we show that…
Spin qubits are typically operated in the lowest orbital of a quantum dot to minimize interference from nearby states. In valence-band hole systems, strong spin-orbit coupling links spin and orbital degrees of freedom, strongly influencing…
We present a magneto-photoluminescence study of individual vertically stacked InAs/GaAs quantum dot pairs separated by thin tunnel barriers. As an applied electric field tunes the relative energies of the two dots, we observe a strong…