Related papers: Structural Studies on Semiconducting Hydrogenated …
Amorphous Si (a-Si) nanostructures are ubiquitous in numerous electronic and optoelectronic devices. Amorphous materials are considered to possess the lower limit to the thermal conductivity (k), which is ~1 W/m-K for a-Si. However, recent…
Ultranonocrystalline diamond/hydrogenated amorphous carbon composite thin films consist of three different components; ultrananocrystalline diamond crystallites, hydrogenated amorphous carbon, and grain boundaries between them. Since grain…
Based on first-principles calculations, we investigate the energetic stability and the electronic properties of (i) a single layer phosphorene (SLP) adsorbed on the amorphous sio2 surface (SLP/a-sio2), and (ii) the further incorporation of…
The variation in local atomic structure and chemical bonding of ZrHx (x=0.15, 0.30, 1.16) magnetron sputtered thin films are investigated by Zr K-edge (1s) X-ray absorption near-edge structure and extended X-ray absorption fine structure…
Strained coherent heteroepitaxy of III-V semiconductor films such as In$_x$Ga$_{1-x}$As/GaAs has potential for electronic and optoelectronic applications such as high density logic, quantum computing architectures, laser diodes, and other…
The band offsets between crystalline and hydrogenated amorphous silicon (a-Si:H) are key parameters governing the charge transport in modern silicon hetrojunction solar cells. They are an important input for macroscopic simulators that are…
In this paper, we report on the optical absorption in porous silicon. We model the absorption process assuming that porous silicon is a pseudo 1D material system having a distribution of band gaps. We show that in order to explain the…
Infrared (IR) spectra of vapor-deposited amorphous water at low temperatures show two weak peaks at around 3720 and 3696 cm-1 assigned to free-OH stretching modes of two- and three-coordinated water molecules (so-called dangling OH bonds),…
Laboratory measurements of unpolarized and polarized absorption spectra of various samples and crystal stuctures of silicon carbide (SiC) are presented from 1200--35,000 cm$^{-1}$ ($\lambda \sim$ 8--0.28 $\mu$m) and used to improve the…
Structural and optical studies have been performed on the thermally-evaporated "as-deposited" and "humid air aged" CsI thin films. The structural analysis for both "as-deposited" and "humid air aged" films shows a well-oriented peaks…
Thermal silica is a common dielectric used in all silicon-photonic circuits. And bound hydroxyl ions (Si-OH) can provide a significant component of optical loss in this material on account of the wet nature of the thermal oxidation process.…
Oxygen adsorption onto Ru (10 bar 1 0) results in the formation of two ordered overlayers, i.e. a c(2 times 4)-2O and a (2 times 1)pg-2O phase, which were analyzed by low-energy electron diffraction (LEED) and density functional theory…
In this paper, we analyse the optical absorption in porous silicon . This is the first attempt to explicitly demonstrate that it is not possible to extract the band gap of such low dimensional nanostructures like porous silicon from a Tauc…
Silicon films doped with Er and O were prepared by techniques of physical vapor deposition on crystalline silicon, ion beam mixing and oxygen incorporation through Ar+ and O2+ implantation, and thermal annealing. Processing steps were…
The optoelectronic properties induced by oxygen vacancy defects in MgO(111) monolayers have been studied using hybrid level of DFT method. HSE calculations shows significant reduction in electronic band gap of MgO monolayer as a result of…
Hydrogenated amorphous silicon microspheres feature a pronounced phononic peak around 2000 cm-1 when they are thermally excited by means of a blue laser. This phononic signature corresponds to vibrational modes of silicon-hydrogen bonds and…
Absorption losses and laser-induced damage threshold (LIDT) are considered as the major constraint for the development of optical coatings for high-power laser optics. Such coatings require paramount properties like low losses due to…
We report on the influence of the chemical composition on the electronic properties of molybdenum oxynitrides thin films grown by reactive sputtering on Si (100) substrates at room temperature. The partial pressure of Ar was fixed at 90 %,…
Nanoscale silicate dust particles are the most abundant refractory component observed in the interstellar medium and thought to play a key role in catalysing the formation of complex organic molecules in the star forming regions of space.…
Within the subgap of amorphous oxide semiconductors like amorphous indium gallium zinc oxide (a-IGZO) are donor-like and acceptor-like states that control the operational physics of optically transparent thin-film transistors (TFTs).…