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On a Si(111) vicinal face near the structural transition temperature, the $1 \times 1$ structure and the $7 \times 7$ structure coexist in a terrace: the $1 \times 1$ structure is in the lower side of the step edge and the $7 \times 7$…

Materials Science · Physics 2009-11-10 Masahide Sato , Makio Uwaha , Yukio Saito

We study the effect of two-dimensionality on step bunching induced by drift of adatoms. When anisotropy of the diffusion coefficient changes alternately on consecutive terraces like a Si(001) vicinal face, bunching occurs with the drift of…

Materials Science · Physics 2007-05-23 Masahide Sato , Makio Uwaha , Yukio Hirose

The steps at the crystal surfaces could be transparent for the migrating adatoms. In the case of significant transparency the velocity of a given step in a given moment is affected by detachment of atoms from rather distant steps in rather…

Other Condensed Matter · Physics 2008-10-15 Bogdan Ranguelov , Stoyan Stoyanov

We study a minimal stochastic model of step bunching during growth on a one-dimensional vicinal surface. The formation of bunches is controlled by the preferential attachment of atoms to descending steps (inverse Ehrlich-Schwoebel effect)…

Statistical Mechanics · Physics 2009-11-10 Frantisek Slanina , Joachim Krug , Miroslav Kotrla

We devise a new 1D atomistic scale model of vicinal growth based on Cellular Automaton. In it the step motion is realized by executing the automaton rule prescribing how adatoms incorporate into the vicinal crystal. Time increases after…

Materials Science · Physics 2017-09-13 F. Krzyżewski , M. Załuska-Kotur , A. Krasteva , H. Popova , V. Tonchev

Step meandering instability in a Burton-Cabrera-Frank (BCF)-type model for the growth of an isolated, atomically high step on a crystal surface is analyzed. It is assumed that the growth is sustained by the molecular precursors deposition…

Materials Science · Physics 2015-06-18 Mikhail Khenner

We study step bunching under conditions of attachment/detachment limited kinetics in the presence of a deposition or sublimation flux, which leads to bunch motion. Analysis of the discrete step dynamics reveals that the bunch velocity is…

Statistical Mechanics · Physics 2009-11-11 V. Popkov , J. Krug

We use a one-dimensional step model to study quantitatively the growth of step bunches on Si(111) surfaces induced by a direct heating current. Parameters in the model are fixed from experimental measurements near 900 deg C under the…

Materials Science · Physics 2009-10-31 Da-Jiang Liu , John D. Weeks

Scanning tunneling microscopy experiments show that the unstable growth morphology observed during molecular beam homoepitaxy on slightly vicinal Si(001) surfaces consists of straight step bunches. The instability occurs under step- flow…

Materials Science · Physics 2007-05-23 J. Myslivecek , C. Schelling , F. Schaffler , G. Springholz , P. Smilauer , J. Krug , B. Voigtlander

We study the step bunching kinetic instability in a growing crystal surface characterized by anisotropic diffusion. The instability is due to the interplay between the elastic interactions and the alternation of step parameters. This…

Statistical Mechanics · Physics 2009-11-11 T. Frisch , A. Verga

Bunching and meandering instability of steps at the 4H-SiC(0001) surface is studied by the kinetic Monte Carlo simulation method. Change in the character of step instability is analyzed for different rates of particle jumps towards step. In…

Materials Science · Physics 2015-06-19 Filip Krzyzewski , Magdalena A. Zaluska-Kotur

Codeposition of impurities during the growth of a vicinal surface leads to an impurity concentration gradient on the terraces, which induces corresponding gradients in the mobility and the chemical potential of the adatoms. Here it is shown…

Materials Science · Physics 2009-11-07 Joachim Krug

Bunching of steps at the surface of growing crystals can be induced by both directions of the driving force: step up and step down. The processes happen in different adatom concentrations and differ in character. In this study we show how…

Materials Science · Physics 2020-01-24 Hristina Popova , Filip Krzyżewski , Magdalena Załuska-Kotur , Vesselin Tonchev

We study the step meandering instability on a surface characterized by the alternation of terraces with different properties, as in the case of Si(001). The interplay between diffusion anisotropy and step stiffness induces a finite…

Statistical Mechanics · Physics 2009-11-11 Thomas Frisch , Alberto Verga

Burton-Cabrera-Frank (BCF) theory has proven to be a versatile framework to relate surface morphology and dynamics during crystal growth to the underlying mechanisms of adatom diffusion and attachment at steps. For an important class of…

The classification of bunching of straight steps on vicinal crystal surfaces identifies two types according to the behavior of the minimal step-step distance in the bunch lmin with increasing the number of steps N in it. In the B1-type lmin…

Materials Science · Physics 2012-05-15 Vesselin Tonchev

We use kinetic Monte Carlo simulations to understand growth- and etching-induced step bunching of 6H-SiC{0001} vicinal surfaces oriented towards [1-100] and [11-20]. By taking account of the different rates of surface diffusion on three…

Materials Science · Physics 2009-09-30 Valery Borovikov , Andrew Zangwill

We study the evolution of step bunches on vicinal surfaces using a thermodynamically consistent step-flow model that (i) circumvents the quasistatic approximation that prevails in the literature by accounting for the dynamics of adatom…

Materials Science · Physics 2021-10-04 Lucas Benoit--Maréchal , Michel E. Jabbour , Nicolas Triantafyllidis

We study current-induced step bunching and wandering instabilities with subsequent pattern formations on vicinal surfaces. A novel two-region diffusion model is developed, where we assume that there are different diffusion rates on terraces…

Materials Science · Physics 2009-11-10 T. Zhao , J. D. Weeks

By carrying out Monte Carlo simulations,we study step bunching during solution growth. For simplicity, we consider a square lattice, which represents a diffusion field in a solution, and express the diffusion of atoms as the hopping of…

Materials Science · Physics 2015-05-20 Masahide Sato
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