Related papers: The spin-torque transistor
The continual model of the nonuniform magnetism in thin films and wires of a diluted magnetic semiconductor is considered with taking into account the finite spin polarization of carriers responsible for the indirect interaction of magnetic…
We study the nonequilibrium transport for the asymmetric and negative differential magnon tunneling driven by temperature bias. We demonstrate that the many-body magnon interaction that makes the magnonic spectrum temperature-dependent is…
A mechanical equivalent system is introduced to mimic the behavior of multilayer structures with diffusive spin transport. The analogy allows one to use existing mechanical intuition to predict the influence of various parameters on spin…
We derive diffusion equations, which describe spin-charge coupled transport on the helical metal surface of a three-dimensional topological insulator. The main feature of these equations is a large magnitude of the spin-charge coupling,…
A large spin-dependent and electric field-tunable magnetoresistance of a two-dimensional electron system (2DES) is a key ingredient for the realization of many novel concepts for spin-based electronic devices. The low magnetoresistance…
We investigate the minimal requirements that induce a nonreciprocal response to temperature differences in a mesoscopic electronic conductor. We identify two distinct mechanisms involved in electron-electron interactions, namely inelastic…
We apply an analysis of time-dependent spin-polarized current in a semiconductor channel at room temperature to establish how the magnetization configuration and dynamics of three ferromagnetic terminals, two of them biased and third…
Electrical manipulation of spins is essential to design state-of-the-art spintronic devices and commonly relies on the spin current injected from a second heavy-metal material. The fact that chiral antiferromagnets produce spin current…
The electrical manipulation of magnetization by current-induced spin torques has given access to realize a plethora of ultralow power and fast spintronic devices such as non-volatile magnetic memories, spin-torque nano-oscillators, and…
Spin-orbit coupling in inversion-asymmetric magnetic crystals and structures has emerged as a powerful tool to generate complex magnetic textures, interconvert charge and spin under applied current, and control magnetization dynamics.…
A scheme of spin diode is proposed that uses a step-like quantum wire with Rashba spin-orbit interaction, connected to two leads with different width. It is shown that a very large vertical spin-polarized current can be generated when…
We demonstrate current-induced bipolar switching in in-plane magnetized spin-valve devices that incorporate a perpendicularly magnetized spin polarizing layer. Further, hysteretic transitions into a state with intermediate resistance occur…
We study nonequilibrium spin dynamics in differentially rotating systems, deriving an effective Hamiltonian for conduction electrons in the comoving frame. In contrast to conventional spin current generation mechanisms that require…
We study the dynamics of spin valves consisting of two layers of magnetic insulators separated by a normal metal in the macrospin model. A current through the spacer generates a spin Hall current that can actuate the magnetization via the…
Superconducting spintronics has emerged in the last decade as a promising new field that seeks to open a new dimension for nanoelectronics by utilizing the internal spin structure of the superconducting Cooper pair as a new degree of…
We theoretically show how the spin orientation of a single magnetic adatom can be controlled by spin polarized electrons in a scanning tunneling microscope configuration. The underlying physical mechanism is spin assisted inelastic…
Magnetization dynamics in nanomagnets has attracted broad interest since it was predicted that a dc-current flowing through a thin magnetic layer can create spin-wave excitations. These excitations are due to spin-momentum transfer, a…
Memristors are non-volatile nano-resistors. Their resistance can be tuned by applied currents or voltages and set to a large number of levels between two limit values. Thanks to these properties, memristors are ideal building blocks for a…
Transistors are the fundamental building block of modern electronic devices. So far, all transistors are based on various types of semiconductor junctions. The most common bipolar-junction transistors and metal-oxide-semiconductor…
In a nanomagnet (whose total spin S< 1000), very small polarized currents can lead to magnetic reversal. Treating on the same footing the transport and magnetic properties of a nanomagnet connected to magnetic leads via tunneling barriers,…