Related papers: Exciton spin relaxation in single semiconductor qu…
Exciton spin dynamics in quasi-spherical CdS quantum dots is studied in detail experimentally and theoretically. Exciton states are calculated using the 6-band k.p Hamiltonian. It is shown that for various sets of Luttinger parameters, when…
We review recent studies on spin decoherence of electrons and holes in quasi-two-dimensional quantum dots, as well as electron-spin relaxation in nanowire quantum dots. The spins of confined electrons and holes are considered major…
The longitudinal and transversal spin decoherence times, $T_1$ and $T_2$, in semiconductor quantum dots are investigated from equation-of-motion approach for different magnetic fields, quantum dot sizes, and temperatures. Various…
We present a theoretical analysis of the phonon-assisted relaxation in a system composed of two self-assembled vertically stacked quantum dots. We construct realistic model, which takes into account the geometry and strain distribution in…
Phonon-induced spin relaxation in coupled lateral quantum dots in the presence of spin-orbit coupling is calculated. The calculation for single dots is consistent with experiment. Spin relaxation in double dots at useful interdot couplings…
We study the spin relaxation in an interacting two--dimensional electron gas in a strong magnetic field for the case that the electron density is close to filling just one Landau sub--level of one spin projection, i.e., for filling factor…
We measure the donor-bound electron longitudinal spin-relaxation time ($T_1$) as a function of magnetic field ($B$) in three high-purity direct-bandgap semiconductors: GaAs, InP, and CdTe, observing a maximum $T_1$ of $1.4~\text{ms}$,…
We study and compare two analytic models of graphene quantum dots for calculating charge relaxation times due to electron-phonon interaction. Recently, charge relaxation processes in graphene quantum dots have been probed experimentally and…
We calculate the magnetisation relaxation in the short-time regime for an ensemble of nanomagnets in the presence of a low-frequency external AC biasing field, at temperatures lower than the magnetic anisotropy energy of the individual…
The population dynamics of dark and bright excitons in (In,Ga)As/GaAs quantum dots is studied by two-color pump-probe spectroscopy in an external magnetic field. With the field applied in Faraday geometry and at T<20 K, the dark excitons…
We report a measurement of the spin-echo decay of a single electron spin confined in a semiconductor quantum dot. When we tip the spin in the transverse plane via a magnetic field burst, it dephases in 37 ns due to the Larmor precession…
Interaction of the electron spin with local elastic twists due to transverse phonons has been studied. Universal dependence of the spin relaxation rate on the strength and direction of the magnetic field has been obtained in terms of the…
We analyze the electron spin relaxation rate $1/T_1$ of individual ion-implanted $^{31}$P donors, in a large set of metal-oxide-semiconductor (MOS) silicon nanoscale devices, with the aim of identifying spin relaxation mechanisms peculiar…
We have studied the physical processes responsible for the spin -flip in GaAs quantum dots. We have calculated the rates for different mechanisms which are related to spin-orbit coupling and cause a spin-flip during the inelastic relaxation…
Although silicon is a promising material for quantum computation, the degeneracy of the conduction band minima (valleys) must be lifted with a splitting sufficient to ensure formation of well-defined and long-lived spin qubits. Here we…
Inelastic spin relaxation and spin splitting $\epsilon_{\mathrm{s}}$ in lateral quantum dots are studied in the regime of strong in-plane magnetic field. Due to both g-factor energy dependence and spin-orbit coupling $\epsilon_{\mathrm{s}}$…
We measure the interdot charge relaxation time T_1 of a single electron trapped in an accumulation mode Si/SiGe double quantum dot. The energy level structure of the charge qubit is determined using photon assisted tunneling, which reveals…
In a GaAs single quantum dot, the relaxation time T_{1} between spin triplet and singlet states has been measured for the last few even number of electrons. The singlet-triplet energy separation E_{ST} is tuned as a control parameter for…
An effective spin relaxation mechanism that leads to electron spin decoherence in a quantum dot is proposed. In contrast to the common calculations of spin-flip transitions between the Kramers doublets, we take into account a process of…
We investigate the electric field tuning of the phonon-assisted hole spin relaxation in single self-assembled In$_{1-x}$Ga$_{x}$As/GaAs quantum dots, using an atomistic empirical pseudopotential method. We find that the electric field along…