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Related papers: First-principles study of adhesion at Cu/SiO$_2$ i…

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We present first-principles calculations of the structural and electronic properties of Si(001)-SiO2 interfaces. We first arrive at reasonable structures for the c-Si/a-SiO2 interface via a Monte-Carlo simulated annealing applied to an…

Materials Science · Physics 2009-10-31 Kwok-On Ng , David Vanderbilt

Interfacial adhesion between graphene and a SiO2 substrate is studied by density functional theory (DFT) with dispersion corrections. The results demonstrate the van der Waals (vdW) interaction as the predominate mechanism for the…

Materials Science · Physics 2015-06-19 Wei Gao , Penghao Xiao , Graeme Henkelman , Kenneth M. Liechti , Rui Huang

Using ab-initio calculations within the framework of Density Functional Theory (DFT), atomic structures and electronic properties of MoS2/HfO2 interface are investigated. The impact of interfacial oxygen concentration on the MoS2/HfO2…

Materials Science · Physics 2014-02-10 Santosh KC , Roberto C. Longo , Robert M. Wallace , Kyeongjae Cho

We study the chemical nature of the bonding of an oxide layer to the parent metal. In order to disentangle chemical effects from strain/misfit, Ti(10$\bar{1}$0)/TiO$_{2}$(100) interface has been chosen. We use the density functional…

Materials Science · Physics 2012-12-10 Linggang Zhu , Graeme J. Ackland

A number of electronic devices involve metal/oxide interfaces in their structure where the oxide layer plays the role of electrical insulator. As the downscaling of devices continues, the oxide thickness can spread over only a few atomic…

Materials Science · Physics 2017-04-26 Eric Tea , Jianqiu Huang , Guanchen Li , Celine Hin

Large scale first-principles calculations based on density functional theory (DFT) employing two different methods (atomic orbitals and plane wave basis sets) were used to study the energetics, geometry, the electronic charge redistribution…

Materials Science · Physics 2010-05-27 Vitaly Alexandrov , Sergei Piskunov , Yuri F. Zhukovskii , Eugene A. Kotomin , Joachim Maier

The effect of monolayers of oxygen (O) and hydrogen (H) on the possibility of material transfer at aluminium/titanium nitride (Al/TiN) and copper/diamond (Cu/C$_{\text{dia}}$) interfaces, respectively, were investigated within the framework…

Materials Science · Physics 2018-03-14 Gregor Feldbauer , Michael Wolloch , Pedro O. Bedolla , Josef Redinger , András Vernes , Peter Mohn

Silicon has long been synonymous with semiconductor technology. This unique role is due largely to the remarkable properties of the Si-SiO_2 interface, especially the (001)-oriented interface used in most devices. Although Si is crystalline…

Materials Science · Physics 2009-10-31 Yuhai Tu , J. Tersoff

We propose the atomic structures of the 4H-SiC/SiO$_2$ interface for the $a$, $m$, C, and Si faces after NO annealing. Our proposed structures preferentially form at the topmost layers of the SiC side of the interface, which agrees with the…

Materials Science · Physics 2024-01-09 Naoki Komatsu , Mizuho Ohmoto , Mitsuharu Uemoto , Tomoya Ono

We determine the stability and properties of interfaces of low-index Au surfaces adhered to TiO2(110), using density functional theory energy density calculations. We consider Au(100) and Au(111) epitaxies on rutile TiO2(110) surface, as…

Materials Science · Physics 2012-02-28 Min Yu , Dallas R. Trinkle

We present the evidence of the low defect density at Ge/GeO$_2$ interfaces in terms of first-principles total energy calculations. The energy advantages of the atom emission from the Ge/GeO$_2$ interface to release the stress due to the…

Materials Science · Physics 2015-05-13 Shoichiro Saito , Takuji Hosoi , Heiji Watanabe , Tomoya Ono

SrHfO3 is a potential dielectric material for metal-oxide-semiconductor (MOS) devices. SrHfO3/GaAs interface has attracted attention due to its unique properties. In this paper, the interface properties of (001) SrHfO3/GaAs are investigated…

Materials Science · Physics 2018-02-14 Li-Bin Shi , Xiao-Ming Xiu , Xu-Yang Liu , Kai-Cheng Zhang , Chun-Ran Li , Hai-Kuan Dong

Using density functional theory (DFT) based first principles calculations, we show that the preferred interfacial plane orientation relationship is determined by the strength of bonding at the interface. The thermodynamic stability, and the…

Materials Science · Physics 2016-06-29 S. K. Yadav , R. Ramprasad , J. Wang , A. Misra , X. -Y. Liu

The effects of the oxidation atmosphere and crystal faces on the interface-trap density was examined by using constant-capacitance deep-level transient spectroscopy to clarify the origin of them. By comparing the DLTS spectra of the…

Adsorption of Fe on the rutile (110)-surface is investigated by means of {\it ab initio} density functional theory calculations. We discuss the deposition of single Fe atoms, an increasing Fe coverage, as well as the adsorption of small Fe…

Materials Science · Physics 2013-10-30 Anna Gruenebohm , Heike C. Herper , Peter Entel

The photoconversion of CO$_2$ to hydrocarbons is a sustainable route to its transformation into value-added compounds and, thereby, crucial to mitigating the energy and climate crises. CuPt nanoparticles on TiO$_2$ surfaces have been…

Based on first-principles calculations, we investigate the energetic stability and the electronic properties of (i) a single layer phosphorene (SLP) adsorbed on the amorphous sio2 surface (SLP/a-sio2), and (ii) the further incorporation of…

Mesoscale and Nanoscale Physics · Physics 2017-01-04 Wanderla L. Scopel , Everson S. Souza , R. H. Miwa

First principles electronic structure calculations based on density functional theory have been used to study the thermodynamic, structural and transport properties of solid solutions and liquid alloys of iron and oxygen at Earth's core…

Geophysics · Physics 2009-10-31 Dario Alfe` , G. David Price , Michael J. Gillan

We provide a first-principles modeling of the beta-Ga2O3/3C-SiC interface that takes into account the reconstructions occurring at the 3C-SiC (001) surface by oxidation, aiming to mimic the actual deposition process under the best…

Materials Science · Physics 2026-02-24 Marica Licciardi , Aldo Ugolotti , Emilio Scalise , Leo Miglio

We present a density functional study of graphene adhesion on a realistic SiO$_2$ surface taking into account van der Waals (vdW) interactions. The SiO$_2$ substrate is modeled at the local scale by using two main types of surface defects,…

Mesoscale and Nanoscale Physics · Physics 2011-08-30 A. N. Rudenko , F. J. Keil , M. I. Katsnelson , A. I. Lichtenstein
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