Related papers: The three-dimensional Anderson model of localizati…
We report the existence of a localization-delocalization transition in the classical plasma modes of a one dimensional Wigner Crystal with a white noise potential environment at T=0. Finite size scaling analysis reveals a divergence of the…
Possibility for collectivization of acceptor states in a semiconductor, converting it to metal, is discussed within the scope of Anderson s-d hybride model. This model is generalized for multicomponent band structure and composite acceptor…
We experimentally investigate spectral statistics in Anderson localization in two-dimensional amorphous disordered media. Intensity distributions captured over an ultrabroad wavelength range of $\sim 600$~nm and averaged over numerous…
We propose to observe Anderson localization of ultracold atoms in the presence of a random potential made of atoms of another species and trapped at the nodes of an optical lattice, with a filling factor less than unity. Such systems enable…
We introduce a new aproximation scheme for the periodic Anderson model (PAM). The modified alloy approximation represents an optimum alloy approximation for the strong coupling limit, which can be solved within the CPA-formalism.…
Subsequent to the ideas presented in our previous papers [J.Phys.: Condens. Matter {\bf 14} (2002) 13777 and Eur. Phys. J. B {\bf 42} (2004) 529], we discuss here in detail a new analytical approach to calculating the phase-diagram for the…
This review presents a unified view on the problem of Anderson localization in one-dimensional weakly disordered systems with short-range and long-range statistical correlations in random potentials. The following models are analyzed: the…
We present a complete analytical and numerical solution of the Typical Medium Theory (TMT) for the Anderson metal-insulator transition. In this theory, we self-consistently calculate the typical amplitude of the electron wave-We present a…
It is well known that Anderson transition is a disorder-induced metal-insulator transition.Contrary to this conventional wisdom, some investigations have shown that disorders could destroy the phase coherence of localized modes in…
We study the transport properties of a tight-binding model of non-interacting fermions with random hopping on the honeycomb lattice. At the particle-hole symmetric chemical potential, the absence of diagonal disorder (random onsite…
We study temperature induced metal-insulator transition in doped ferromagnetic semiconductors, described by s-d exchange model. The transition is a result of the mobility edge movement, the disorder being due to magnetic ions spin density…
By employing Random Matrix Theory (RMT) and first-principle calculations, we investigated the behavior of Anderson localization in 1D, 2D and 3D systems characterized by a varying disorder. In particular, we considered random binary layer…
The model of two electrons with Coulomb interaction on a two-dimensional (2D) disordered lattice is considered. It is shown that the interaction can give a sharp transition to delocalized states in a way similar to the Anderson transition…
A review of recent progress in numerical studies of the Anderson transition in three dimensional systems is presented. From high precision calculations the critical exponent $\nu$ for the divergence of the localization length is estimated…
We study Anderson localization in disordered tight-binding models on hyperbolic lattices. Such lattices are geometries intermediate between ordinary two-dimensional crystalline lattices, which localize at infinitesimal disorder, and Bethe…
The Anderson delocalization-localization transition is studied in multilayered systems with randomly placed interlayer bonds of density $p$ and strength $t$. In the absence of diagonal disorder (W=0), following an appropriate perturbation…
Anderson localization is studied for two-dimensional Dirac fermions in the presence of strong random scattering. Averaging with respect to the latter leads to a graphical representation of the correlation function with entangled random…
I discuss the properties of electron states in amorphous Si based on large scale calculations with realistic several thousand atom models. A relatively simple model for the localized to extended (Anderson) transition is reviewed. Then, the…
We investigate the doping-driven metal-insulator transition of the (2+1)-dimensional Hubbard model in the path-integral formalism with the tensor renormalization group method. We calculate the electron density $\langle n\rangle$ as a…
This work proposes a very simple random matrix model, the Flip Matrix Model, liable to approximate the behavior of a two dimensional electron in a weak random potential. Its construction is based on a phase space analysis, a suitable…