Related papers: Electronic inhomogeneity at magnetic domain walls …
We microscopically derive transport equations for the conduction electrons in ferromagnetic materials with an inhomogeneous magnetization profile. Our quantum kinetic approach includes elastic scattering and anisotropic spin-flip scattering…
A domain wall in a ferromagnetic one-dimensional nanowire experiences current induced motion due to its coupling with the conduction electrons. When the current is not sufficient to drive the domain wall through the wire, or it is confined…
We study the effect of the domain wall on electronic transport properties in wire of ferromagnetic 3$d$ transition metals based on the linear response theory. We considered the exchange interaction between the conduction electron and the…
We study the effect of a domain wall on the electronic transport in ferromagnetic quantum wires. Due to the transverse confinement, conduction channels arise. In the presence of a domain wall, spin up and spin down electrons in these…
Interfacial ferroelectricity offers a promising platform for ultrafast, low-power memory devices. While previous studies have demonstrated the importance of domain wall in polarization switching, the coexistence of various domain wall types…
We present a theoretical study of spin-dependent transport through a ferromagnetic domain wall. With an increase of the number of components of the exchange coupling, we have observed that the variance of the conductance becomes half. As…
Domain walls in ferroelectric oxides provide fertile ground for the development of next-generation nanotechnology. Examples include domain-wall-based memory, memristors, and diodes, where the unusual electronic properties and the quasi-2D…
Controlling magnetism using voltage is highly desired for applications, but remains challenging due to fundamental contradiction between polarity and magnetism. Here we propose a mechanism to manipulate magnetic domain walls in…
We develop the theory of magnetic domain wall motion in coupled double-layer systems where electrons can hop between the layers giving rise to an antiferromagnetic coupling. We demonstrate that the force from the interlayer coupling drives…
Domain walls are the transition regions between two magnetic domains. These objects have been very relevant during the last decade, not only due to their intrinsic interest in the development of novel spintronics devices but also because of…
Ferroelectric domain walls are attracting broad attention as atomic-scale switches, diodes and mobile wires for next-generation nanoelectronics. Charged domain walls in improper ferroelectrics are particularly interesting as they offer…
In elastically coupled multiferroic heterostructures that exhibit full domain correlations between ferroelectric and ferromagnetic sub-systems, magnetic domain walls are firmly pinned on top of ferroelectric domain boundaries. In this work…
Use of a spin polarized current for the manipulation of magnetic domain walls in ferromagnetic nanowires has been the subject of intensive research for many years. Recently, due to technological advancements, creating nano-contacts with…
The transmission of correlated electrons through a domain wall in a ferromagnetic one dimensional system is studied theoretically in the limit of a domain wall width smaller or comparable to the electron Fermi wavelength. The domain wall…
Magnetic domain walls can be moved by spin-polarized currents due to spin-transfer torques. This opens the possibility to use them in spintronic memory devices as, e.g., in racetrack storage. Naturally, in miniaturized devices domain walls…
We consider theoretically the effect of an inhomogeneous magnetoelectric coupling on the magnon-induced dynamics of a ferromagnet. The magnon-mediated magnetoelectric torque affects both the homogeneous magnetization and magnon-driven…
The transmission of correlated electrons through a domain wall in ferromagnetic quasi-one-dimensional systems is studied theoretically in the case when the domain wall width is comparable with the Fermi wavelength of the charge carriers.…
Materials with long-range order like ferromagnetism or ferroelectricity exhibit uniform, yet differently oriented three-dimensional regions called domains that are separated by two-dimensional topological defects termed domain…
Electronic transport through thin and laterally constrained domain walls in ferromagnetic nanojunctions is analyzed theoretically. The description is formulated in the basis of scattering states. The resistance of the domain wall is…
We study electron transport through a domain wall in a ferromagnetic nanowire subject to spin-dependent scattering. A scattering matrix formalism is developed to address both coherent and incoherent transport properties. The coherent case…