Related papers: Electron Spin Relaxation under Drift in GaAs
In p+ GaAs thin films, the effect of photoelectron degeneracy on spin transport is investigated theoretically and experimentally by imaging the spin polarization profile as a function of distance from a tightly-focussed light excitation…
We report a large and unexpected suppression of the free electron spin relaxation in lightly-doped n-GaAs bulk crystals. The spin relaxation rate shows weak mobility dependence and saturates at a level 30 times less then that predicted by…
It has recently been suggested that two counter-propagating, circularly polarized, ultra-intense lasers can induce a strong electron spin polarization at the magnetic node of the electromagnetic field that they setup. We confirm these…
We study the optically induced spin polarization, spin dephasing and diffusion in several high-mobility two-dimensional electron systems, which are embedded in GaAs quantum wells grown on (110)-oriented substrates. The experimental…
A formula for the electron spin relaxation rate of an electron-phonon system is derived using a new spring-loop diagram method. The result contains the distribution functions for the electrons and phonons properly. Therefore, all the spin…
The spin relaxation time due to the electron-acoustic phonon scattering in GaAs quantum dots is studied after the exact diagonalization of the electron Hamiltonian with the spin-orbit coupling. Different effects such as the magnetic field,…
We evaluate the charge and longitudinal spin response functions of a two-dimensional electron gas with $e^2/r$ interactions in an arbitrary state of spin polarization, using a structurally self-consistent approach to treat exchange and…
The spin relaxation time of electrons in GaAs and GaN are determined with a model that includes momentum scattering by phonons and ionized impurities, and spin scattering by the Elliot-Yafet, D'yakonov-Perel, and Bir-Aronov-Pikus…
We have investigated the spin dynamics of a high-mobility two-dimensional electron system (2DES) in a GaAs--Al$_{0.3}$Ga$_{0.7}$As single quantum well by time-resolved Faraday rotation (TRFR) in dependence on the initial degree of spin…
We report on the optical manipulation of the electron spin relaxation time in a GaAs based heterostructure. Experimental and theoretical study shows that the average electron spin relaxes through hyperfine interaction with the lattice…
We present a detailed experimental and theoretical analysis of the optical orientation of electron spins in GaAs/AlAs quantum wells. Using time and polarization resolved photoluminescence excitation spectroscopy, the initial degree of…
Spin transport properties of a spin-polarized two-dimensional electron gas are studied in the presence of electron-electron interactions. Longitudinal and transverse spin diffusion coefficients are calculated with the quantum transport…
Multi-valley spin relaxation in $n$-type GaAs quantum wells with in-plane electric field is investigated at high temperature by means of kinetic spin Bloch equation approach. The spin relaxation time first increases and then decreases with…
We investigate electron spin relaxation in GaAs in the proximity of a Fe/MgO layer using spin-resolved optical pump-probe spectroscopy, revealing a strong dependence of the spin relaxation time on the strength of an exchange-driven…
Pure spin currents are measured in micron-wide channels of GaAs two-dimensional electron gas (2DEG). Spins are injected and detected using quantum point contacts, which become spin polarized at high magnetic field. High sensitivity to the…
Nuclear spin relaxation is studied in n-GaAs thick layers and microcavity samples with different electron densities. We reveal that both in metallic samples where electrons are free and mobile, and in insulating samples, where electrons are…
We have studied the physical processes responsible for the spin -flip in GaAs quantum dots. We have calculated the rates for different mechanisms which are related to spin-orbit coupling and cause a spin-flip during the inelastic relaxation…
Optical orientation experiments have been performed in GaAs epilayers with photoexcitation energies in the 3 eV region yielding the photogeneration of spin-polarized electrons in the satellite L valley. We demonstrate that a significant…
The magnetoresistance of a low carrier density, disordered GaAs based two-dimensional (2D) electron gas has been measured in parallel magnetic fields up to 32 T. The feature in the resistance associated with the complete spin polarization…
Spin transport experiments in graphene, a single layer of carbon atoms, indicate spin relaxation times that are significantly shorter than the theoretical predictions. We investigate experimentally whether these short spin relaxation times…