Related papers: Spatial Imaging of Magnetically Patterned Nuclear …
Using a microfabricated, p-type GaAs Hall bar, is it shown that the combined application of co-planar electric and magnetic fields enables the observation at 50 K of spatial oscillations of the photoluminescence circular polarization due to…
We report on the direct measurement of the electron spin splitting and the accompanying nuclear Overhauser (OH) field, and thus the underlying nuclear spin polarization (NSP) and fluctuation bandwidth, in a single InAs quantum dot under…
A new method for local dynamic nuclear polarization is demonstrated in a GaAs/AlGaAs heterostructure at the Landau level filling factor $\nu=3$. Using a narrow channel sample, where the width varies stepwise along the electron flow, we find…
Optical absorption of circularly polarized light is well known to yield an electron spin polarization in direct band gap semiconductors. We demonstrate that electron spins can even be generated with high efficiency by absorption of linearly…
The paper reports optical orientation experiments performed in the narrow GaAs/AlGaAs quantum wells doped with Mn. We experimentally demonstrate a control over the spin polarization by means of the optical orientation via the…
Nuclear spin polarization is typically generated in GaAs quantum point contacts (QPCs) when an out-of-plane magnetic field gives rise to spin-polarized quantum Hall edge states, and a voltage bias drives transitions between the edge states…
The hyperfine field from dynamically polarized nuclei in n-GaAs is very spatially inhomogeneous, as the nu- clear polarization process is most efficient near the randomly-distributed donors. Electrons with polarized spins traversing the…
We report measurements and calculations of the spin-polarization, induced by a parallel magnetic field, of interacting, dilute, two-dimensional electron systems confined to GaAs/AlGaAs heterostructures. The results reveal the crucial role…
Nuclear spin polarization plays a crucial role in quantum information processing and quantum sensing. In this work, we demonstrate a robust and efficient method for nuclear spin polarization with boron vacancy ($\mathrm{V_B^-}$) defects in…
Epitaxial ferromagnetic metal - semiconductor heterostructures are investigated using polarization-dependent electroabsorption measurements on GaAs p-type and n-type Schottky diodes with embedded In1-xGaxAs quantum wells. We have conducted…
A combination of experimental techniques, e.g. vector-MOKE magnetometry, Kerr microscopy and polarized neutron reflectometry, was applied to study the field induced evolution of the magnetization distribution over a periodic pattern of…
We present the results of our spectropolarimetric observations for a number of active galactic nuclei (AGNs) carried out at the 6-m telescope with the SCORPIO focal reducer. The derived wavelength dependences of the polarization have been…
We study decoherence of nuclear spins in a nanoscale GaAs device based on resistively detected nuclear magnetic resonance (NMR). We demonstrate how the spin echo technique can be modified for our system, and this is compared to the damping…
Nuclear spin relaxation is studied in n-GaAs thick layers and microcavity samples with different electron densities. We reveal that both in metallic samples where electrons are free and mobile, and in insulating samples, where electrons are…
We present a real-time abinitio description of optical orientation in bulk GaAs due to the coupling with an ultrashort circular polarized laser source. The injection of spin polarized electrons in the conduction band is correctly…
In III-V semiconductor nano-structures the electron and nuclear spin dynamics are strongly coupled. Both spin systems can be controlled optically. The nuclear spin dynamics is widely studied, but little is known about the initialization…
A method for the generation of ultrarelativistic electron beams with high spin polarization is put forward, where a tightly-focused linearly-polarized ultraintense laser pulse interacts with a nonprepolarized transverse-size-tailored solid…
Spin sensitive bleaching of the absorption of far-infrared radiation has been observed in $p$-type GaAs/AlGaAs quantum well structures. The absorption of circularly polarized radiation saturates at lower intensities than that of linearly…
Similar to nitrogen-vacancy centers in diamond and impurity atoms in silicon, interstitial gallium deep paramagnetic centers in GaAsN have been proven to have useful characteristics for the development of spintronic devices. Among other…
A self-consistent electronic structure calculation based on the Luttinger-Kohn model is performed on GaMnAs/GaAs multilayers. The Diluted Magnetic Semiconductor layers are assumed to be metallic and ferromagnetic. The high Mn concentration…