Related papers: Rashba-effect-induced spin dephasing in n-typed In…
We perform a many-body study of the spin dephasing due to the D'yakonov-Perel' effect in n-typed GaAs (100) quantum wells under high magnetic fields in the Voigt configuration by constructing and numerically solving the kinetic Bloch…
We perform a many-body study of the spin dephasing due to the D'yakonov-Perel' effect in n-typed GaAs (100) quantum wells for high temperatures ($\geq 120$ K) under moderate magnetic fields in the Voigt configuration by constructing and…
The spin dephasing due to the Rashba spin-orbit coupling, especially its dependence on the direction of the electric field is studied in InAs quantum wire. We find that the spin dephasing is strongly affected by the angle of Rashba…
By constructing and numerically solving the kinetic Bloch equations we perform a many-body study of the spin dephasing due to the D'yakonov-Perel' effect in $n$-typed GaAs (100) quantum wells for high temperatures. In our study, we include…
Hole spin dephasing time due to the D'yakonov-Perel' mechanism in $p$-type GaAs (100) quantum wells with well separated light-hole and heavy-hole bands is studied by constructing and numerically solving the kinetic spin Bloch equations. We…
We investigate the spin dynamics of electrons in quantum wells where the Rashba type of spin-orbit coupling is present in the form of random nanosize domains. We study the effect of magnetic field on the spin relaxation in these systems and…
We investigate the spin relaxation due to the random Rashba spin-orbit coupling in symmetric GaAs (110) quantum wells from the fully microscopic kinetic spin Bloch equation approach. All relevant scatterings, such as the electron-impurity,…
We calculate the dephasing time $\tau_{\phi}(B)$ of an electron in a two-dimensional quantum well with a Rashba spin-orbit interaction, spin-polarized by an arbitrarily large magnetic field parallel to the layer. $\tau_\phi (B)$ is…
We report the first theoretical estimate of the nuclear-spin dephasing time T_2 owing to the spin interaction with the two-dimensional electron gas, when the latter is in the integer quantum Hall state, in a two-dimensional heterojunction…
Multi-subband effect on spin precession and spin dephasing in $n$-type GaAs quantum wells is studied with electron-electron and electron-phonon scattering explicitly included. The effects of temperature, well width and applied electric…
We utilize the kinetic spin Bloch equation approach to investigate the steady-state spin diffusion in $n$-type (111) GaAs quantum wells, where the in-plane components of the Dresselhaus spin-orbit coupling term and the Rashba term can be…
We investigate the electron spin dephasing in the presence of spin phase recovering by a serried $\pi$-pulse sequence in $n$-type (001) GaAs quantum wells in a wide range of temperature and density regimes. Our numerical calculation is…
Electron spin dynamics is investigated in n-i-n GaAs/AlGaAs coupled quantum wells. The electron spin dephasing time is measured as a function of an external electrical bias under resonant excitation of the 1sHH intrawell exciton using a…
In this work we investigate spin diffusion in InAs quantum wells with the Rashba spin-orbit coupling modulated by a gate voltage. The gate voltage dependence of the spin diffusion under different temperatures is studied with all the…
There currently is a large effort to explore spin-orbit effects in semiconductor structures with the ultimate goal of manipulating electron spins with gates. A search for materials with large spin-orbit coupling is therefore important. We…
We find that the Rashba spin splitting is intrinsically a nonlinear function of the momentum, and the linear Rasha model may overestimate it significantly, especially in narrow-gap materials. A nonlinear Rashba model is proposed, which is…
We consider theoretically the relaxation of electron spin component parallel to the growth direction in multiple (110) GaAs quantum wells. The sources of spin relaxation are the random Rashba spin-orbit coupling due to the electric field of…
We demonstrate that the size of the electric-field-induced Rashba spin splitting in an 80 nm wide modulation-doped InGaSb quantum well can depend strongly on the spatial variation of the electric field. In a slightly asymmetric quantum well…
InAs quantum well heterostructures are of considerable interest for mesoscopic device applications such as scanning probe and magnetic recording sensors, which require the channel to be close to the surface. Here we report on…
Using time-resolved Faraday rotation, the drift-induced spin-orbit Field of a two-dimensional electron gas in an InGaAs quantum well is measured. Including measurements of the electron mobility, the Dresselhaus and Rashba coefficients are…