Related papers: Single-electron tunneling in InP nanowires
A procedure to achieve the density-controlled growth of gold-catalyzed InP nanowires (NWs) on (111) silicon substrates using the vapor-liquid-solid method by molecular beam epitaxy is reported. We develop an effective and mask-free method…
We report on the fabrication of field-effect transistors based on single and bilayers of the semiconductor WS2 and the investigation of their electronic transport properties. We find that the doping level strongly depends on the device…
Single-layer TaS$_2$ is epitaxially grown on Au(111) substrates. The resulting two-dimensional crystals adopt the 1H polymorph. The electronic structure is determined by angle-resolved photoemission spectroscopy and found to be in excellent…
We have demonstrated by electroluminescence the injection of spin polarized electrons through Co/Al2O3/GaAs tunnel barrier into p-doped InAs/GaAs quantum dots embedded in a PIN GaAs light emitting diode. The spin relaxation processes in the…
We demonstrate a high electron conductivity (> 10^2 S/cm and up to 10^3 S/cm) of tungsten suboxide W18O(52.4-52.9)(or equivalently WO(2.91-2.94)) nanotubes (2 to 3 nm in diameter, ca. micrometer long). The conductivity is measured in the…
We describe here the realization of a single electron source similar to single photon sources in optics. On-demand single electron injection is obtained using a quantum dot connected to the conductor via a tunnel barrier of variable…
Intratube quantum dots showing particle-in-a-box-like states with level spacings up to 200meV are realized in metallic single-walled carbon nanotubes by means of low dose medium energy Ar irradiation. Fourier transform scanning tunneling…
We report results on the control of barrier transparency in InAs/InP nanowire quantum dots via the electrostatic control of the device electron states. Recent works demonstrated that barrier transparency in this class of devices displays a…
Self-assembled Ge wires with a height of only 3 unit cells and a length of up to 2 micrometers were grown on Si(001) by means of a catalyst-free method based on molecular beam epitaxy. The wires grow horizontally along either the [100] or…
We investigate the effect of electron-electron interactions on proximity-induced $s$-wave superconductivity in one-dimensional nanowires. We treat the interactions on a self-consistent mean-field level, and find an analytic expression for…
Coupled quasi-one-dimensional (quasi-1D) electron systems host rich emergent physics that cannot be accounted for by understanding isolated 1D electron systems alone. Open questions remain about how transport in these arrays can be…
We report electrical characterization of quantum dots formed by introducing pairs of thin wurtzite (WZ) segments in zinc blende (ZB) InAs nanowires. Regular Coulomb oscillations are observed over a wide gate voltage span, indicating that WZ…
By first lithographically fabricating contact electrodes and then as last step growing carbon nanotubes with chemical vapour deposition across the ready-made chip, many potential contamination mechanisms for nanotube devices can be avoided.…
We report an experimental study of proximity effect-induced superconductivity in crystalline Cu and Co nanowires and a nanogranular Co nanowire structure in contact with a superconducting W floating electrode which we call inducer. The…
Magnetization hysteresis loops of tin samples with an inverted opal structure are presented. The sample formed by tin particles with the size of 70 and 128 nm is found to be a type-I superconductor. The tin sample formed by 80 and 42 nm…
Sequential single-electron charging is observed in InAs Self-Assembled Quantum Dots using capacitance spectroscopy. In this system, the Coulomb energy is smaller than the inter-level energy spacings due to the quantum confinement and both…
Molecular states in a SINGLE PAIR of strongly coupled self-assembled InAs quantum dots are investigated using a sub-micron sized single electron transistor containing just a few pairs of coupled InAs dots embedded in a GaAs matrix. We…
We report on an experimental study of low temperature tunnelling in hybrid NbTiN/GaMnAs structures. The conductance measurements display a root mean square V dependence, consistent with the opening of a correlation gap in the density of…
Tunnel transport of interacting spin-polarized electrons through a single-level vibrating quantum dot in external magnetic field is studied. By using density matrix method, the current-voltage characteristics and the dependence of…
Multiwalled carbon nanotubes are shown to be ballistic conductors at room temperature, with mean free paths of the order of tens of microns. These experiments follow and extend the original experiments by Frank et al (Science, 280 1744…