Related papers: Field-Effect Persistent Photoconductivity
The photoluminescence (PL) spectra of a two-dimensional electron system induced in a Be-delta-doped GaAs/AlGaAs quantum well (QW) with a back gate are measured. The electron density is controlled from 1 X 10^{9} cm^{-2} to 2.5 X 10^{11}…
The electronic properties of Fe-doped Al0.31Ga0.69N/GaN heterostructures have been studied by Shubnikov-de Haas measurement. Two subbands of the two-dimensional electron gas in the hetero-interface were populated. After the low temperature…
Shallow GaAs/InGaAs/GaAs quantum well structures with and without a three monolayer thick AlAs central barrier have been investigated for different well widths and Si doping levels. The transport parameters are determined by resistivity…
We studied the persistent photoconductivity (PPC) effect in AlGaN/AlN/GaN heterostructures with two different Al-compositions (x=0.15 and x=0.25). The two-dimensional electron gas formed at the AlN/GaN heterointerface was characterized by…
A doping series of AlAs (001) quantum wells with Si delta-modulation doping on both sides reveals different dark and post-illumination saturation densities, as well as temperature dependent photoconductivity. The lower dark two-dimensional…
The photoconductivity of GaAs structures delta-doped by Sn has been investigated for wavelengths lambda= 650-1200 nm in the temperature interval T= 4.2-300 K. The electron densities and mobilities, before and after illumination, have been…
The influence of illumination on a high mobility two-dimensional electron gas with high concentration of charge carriers is studied in selectively doped single GaAs quantum wells with short-period AlAs/GaAs superlattice barriers at a…
A giant built-in electric field in the growth direction makes excitons in wide GaN/(Al, Ga)N quantum wells spatially indirect even in the absence of any external bias. Significant densities of indirect excitons can accumulate in…
We report on a dynamic photoconductive gain effect in quantum wires which are lithographically fabricated in an AlGaAs/GaAs quantum well via a shallow-etch technique. The effect allows resolving the one-dimensional subbands of the quantum…
We investigated excitonic absorptions in GaAs/AlAs/GaAs single barrier heterostructure using both photocapacitance and photocurrent spectroscopies at room temperature. Photocapacitance spectra show well defined resonance peak of indirect…
We have developed a scanning photoluminescence technique that can directly map out the local two-dimensional electron density with a relative accuracy of $\sim2.2\times10^8$ cm$^{-2}$. The validity of this approach is confirmed by the…
By selective doping (Be) of the well and barrier regions of p-GaAs/AlGaAs structures we have realized the situation where the upper Hubbard band (A+ centers) has been occupied by holes in the equilibrium. We studied temperature behavior of…
We study electrical transport properties in exfoliated molybdenum disulfide (MoS2) back-gated field effect transistors at low drain bias and under different illumination intensities. It is found that photoconductive and photogating effect…
Low-temperature illumination of a two-dimensional electron gas in GaAs quantum wells is known to greatly improve the quality of high-field magnetotransport. The improvement is known to occur even when the carrier density and mobility remain…
Quantum well of AlGaAs/GaAs is very important to study transport properties of electrons due to its wider application in electronic devices. Hence, the double well of AlGaAs/GaAs with triple barrier is taken to study transmission…
With the aim of improving solar cell efficiency, a structure for realizing electron tunneling from In0.6Al0.4As quantum dots (QDs) through an Al0.4Ga0.6As barrier to AlAs has been grown using molecular beam epitaxy. The photoluminescence…
A highly superlinear in radiation intensity photoconductance induced by terahertz laser radiation with moderate intensities has been observed in quantum point contacts made of GaAs quantum wells operating in the deep tunneling regime. For…
Transient magnetotransport of two-dimensional electrons with partially-inverted distribution excited by an ultrashort optical pulse is studied theoretically. The time-dependent photoconductivity is calculated for GaAs-based quantum wells by…
The effect of a constant electric field and donor impurity on the energies and oscillator strengths of electron intraband quantum transitions in double-well spherical quantum dot GaAs/Al$_{x}$Ga$_{1-x}$As/GaAs is researched. The problem is…
InGaAs/GaAsBi/InGaAs quantum wells (QWs) were grown on GaAs substrates by gas source molecular beam epitaxy for realizing the type II band-edge line-up. Both type I and type II transitions were observed in the Bi containing W QWs and the…