Related papers: Growth and properties of strained VOx thin films w…

In this work, the results of fabricating ultra thin VO$_2$ films on the technologically relevant amorphous SiO$_2$ surface using reactive DC magnetron sputtering are presented. Results indicate that a post deposition anneal in low partial…

This work reports the fabrication and characterization of high-quality tungsten-doped vanadium dioxide (WxV1-xO2, x = 0~3 at. %) by thermal oxidation of sputtered tungsten-vanadium alloyed thin films with different atomic percentages and…

Despite widespread interest in the phase-change applications of vanadium dioxide (VO$_2$), the fabrication of high-quality VO$_2$ thin films with elevated transition temperatures (TIMT) and high Insulator-Metal-Transition resistance…

We report on the influence of the chemical composition on the electronic properties of molybdenum oxynitrides thin films grown by reactive sputtering on Si (100) substrates at room temperature. The partial pressure of Ar was fixed at 90 %,…

In oxide epitaxy, the growth temperature and background oxygen partial pressure are considered as the most critical factors that control the phase stability of an oxide thin film. Here, we report an unusual case wherein diffusion of oxygen…

LaFeAsO1-xFx thin films were deposited successfully on (001)-oriented LaAlO3 and MgO substrates from stoichiometric LaFeAsO1-xFx polycrystalline targets with fluorine concentrations up to x = 0.25 by PLD. Room temperature deposition and…

VO2 is a much-discussed material for oxide electronics and neuromorphic computing applications. Here, heteroepitaxy of vanadium dioxide (VO2) was realized on top of oxide nanosheets that cover either the amorphous silicon dioxide surfaces…

An electrical study of thin $VO_{2}$ films in the vicinity of the structural phase transition at $68^{0}C$ shows (a) that the electrical resistance $R$ follows $log (R)$ $\propto$ $-T$ over the $T$-range, $20 < T < 80 ^{0}C$ covering both…

We report a nascent real time Stranski-Krastanov growth of reactively sputtered ScNx thin films on MgO(100). The epitaxial growth was limited to 5 nm at a substrate temperature (Ts) of 25 C while the self-sustaining epitaxial nature along…

We grew a 2 micron thick film of single-phase BiFeO3 on a Si (100) substrate by pulsed laser deposition with a substrate temperature of 575 oC and an oxygen partial pressure of 0.06 mbar. X ray diffraction analysis indicated that the film…

The structure, morphology, and electrical properties of epitaxial a-axis oriented thin films of Nd(0.2)Sr(0.8)MnO(3) are reported for thicknesses 10 nm <= t <= 150 nm. Films were grown with both tensile and compressive strain on various…

In this work, we present the investigation of temperature dependent hall measurement of the ultra thin VO$_2$ films grown on Si/SiO$_2$ substrate. Experimental results suggest that electrons are the predominant carrier both in the…

We present the results of a density functional theory (DFT) investigation of the surfaces of rutile-like vanadium dioxide, VO2(R). We calculate the surface energies of low Miller index planes, and find that the most stable surface…

Bulk EuPd$_2$Si$_2$ show a temperature-driven valence transisition of europium from $\sim$+2 above 200 K to $\sim$+3 below 100 K, which is correlated with a shrinking by approximatly 2 % of the crystal lattice along the two a-axes. Due to…

CoV___O___ (CVO) stands out among spinel vanadates for its ultra-short V-V distances, placing it at the brink of itinerant electron behaviour-an ideal playground for strain engineering. In this work, we exploit this sensitivity by growing…

Epitaxial strain provides important pathways to control the magnetic and electronic states in transition metal oxides. However, the large strain is usually accompanied by a strong reduction of the oxygen vacancy formation energy, which…

The influence of oxygen stoichiometry on the uranium local environment is explored in epitaxial single crystal uranium oxide thin films grown by DC magnetron sputtering. Through post-growth annealing, the stoichiometry of as-grown UO$_{2}$…

Atomically flat, epitaxial, and stoichiometric thin films of the electronically phase separated compound (La$_{0.5}$Pr$_{0.5}$)$_{0.67}$Ca$_{0.33}$MnO$_{3}$ were grown on as-received and treated NdGaO$_{3}$ substrates by fine tuning of…

The technological conditions of oxygen content variation in epitaxial La0.7Sr0.3MnO3-{\delta} films and the peculiarities of change of their transport characteristics were investigated. The films were grown onto single crystal SrTiO3…

We present and discuss an original method to synthesize disordered Nanostructured (NS) VO$_x$ films with controlled stoichiometry and tunable electronic structures. In these NS films, the original lattice symmetry of the bulk vanadium…