Related papers: The Full Mottness
Describing the doped Fullerenes using a generalized Hubbard model, we study the Mott transition for different integer fillings of the t_1u band. We use the opening of the energy-gap E_g as a criterion for the transition. E_g is calculated…
I introduce a doped two-dimensional quantum dimer model describing a doped Mott insulator and retaining the original Fermi statistics of the electrons. This model shows a rich phase diagram including a d-wave hole-pair unconventional…
We investigate the strong correlation effect in the spinless electron-hole two-band Hubbard model using the dynamical mean-field theory. At half filling, both the renormalization factor $Z$ and the number of conduction electrons (valence…
We analyze a model of two-leg Hubbard ladders weakly coupled by interladder tunneling. At half filling a semimetallic state with small Fermi pockets is induced beyond a threshold tunneling strength. The sign changes in the single electron…
We extend previous studies on orbital-selective Mott transitions in the paramagnetic state of the half-filled degenerate two-band Hubbard model to the general doped case, using a high-precision quantum Monte Carlo dynamical mean-field…
We derive the disorder vs. doping phase diagram of the doped Hubbard model via Dynamical Mean Field Theory combined with Typical Medium Theory, which allows the description of both Mott (correlation driven) and Anderson (disorder driven)…
We study the phase diagram of a one-dimensional extended Hubbard model with antiferromagnetic exchange interaction analytically and numerically. The bosonization and transfer-matrix renormalization group methods are used in the…
We show that pronounced modulations in spin and charge densities can be induced by the insertion of a single hole in an otherwise half-filled 2-leg Hubbard ladder. Accompanied with these modulations is a loosely bound structure of the doped…
We study the electronic instabilities of the Hubbard model in the 1/6 hole-doped Kagome lattice using the variational cluster approach. The 1/6 hole doping is unique in the sense that the Fermi level is at the von Hove singularity and the…
The spectra of the t-U and t-t'-U Hubbard models are investigated in the one-loop approximation for different values of the electron filling. It is shown that the four-band structure which is inherent in the case of half-filling and low…
It is widely recognised that the effect of doping into a Mott insulator is complicated and unpredictable, as can be seen by examining the Hall coefficient in high $T_{\rm c}$ cuprates. The doping effect, including the electron-hole doping…
The Hubbard model in the strong-coupling regime is mainly studied by Kondo-lattice theory or 1/d expansion theory, with d the spatial dimensionality. In two dimensions and higher, the ground state within the Hilbert subspace with no order…
We investigate the properties of the metallic state obtained by photo-doping carriers into a Mott insulator. In a strongly interacting system, these carriers have a long life-time, so that they can dissipate their kinetic energy to a phonon…
The Mott insulator is the quintessential strongly correlated electronic state. We obtain complete insight into the physics of the two-dimensional Mott insulator by extending the slave-fermion (holon-doublon) description to finite…
In a solid material strong interactions between the electrons can lead to surprising properties. A prime example is the Mott insulator, where the suppression of conductivity is a result of interactions and not the consequence of a filled…
Understanding the doping evolution from a Mott insulator to a superconductor probably holds the key for resolving the mystery of unconventional superconductivity in copper oxides. To elucidate the evolution of the electronic state starting…
We investigate the nature of doped Mott insulators using exact diagonalization and density matrix renormalization group methods. Persistent spin currents are revealed in the ground state, which are concomitant with a nonzero total momentum…
The spectral weight of states induced in the Mott gap via hole doping in the two-dimensional Hubbard model is studied within cluster dynamical mean field theory combined with finite-temperature exact diagonalization. If the cutoff energy is…
We study the interplay of disorder and correlation in the one-dimensional hole-doped Hubbard-model with disorder (Anderson-Hubbard model) by using the density-matrix renormalization group method. Concentrating on the doped-hole density…
We study the doping evolution of the electronic structure in the pseudogap state of high-Tc cuprate superconductors, by means of a cluster extension of the dynamical mean-field theory applied to the two-dimensional Hubbard model. The…