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Anharmonic decay rates are calculated for a realistic atomic model of amorphous silicon. The results show that the vibrational states decay on picosecond timescales and follow the two-mode density of states, similar to crystalline silicon,…

Condensed Matter · Physics 2009-10-28 Jaroslav Fabian , Philip B. Allen

We have performed an approximate ab initio calculation of vibrational properties of hydrogenated amorphous silicon (a-Si:H) using a molecular dynamics method. A 216 atom model for pure amorphous silicon (a-Si) has been employed as a…

Disordered Systems and Neural Networks · Physics 2009-10-31 Serge M. Nakhmanson , D. A. Drabold

Amorphous silicon (a-Si) models are analyzed for structural, electronic and vibrational characteristics. Several models of various sizes have been computationally fabricated for this analysis. It is shown that a recently developed…

Disordered Systems and Neural Networks · Physics 2018-11-29 Dale Igram , Bishal Bhattarai , Parthapratim Biswas , D. A. Drabold

We have developed a formulation of density functional perturbation theory for the calculation of vibrational frequencies in molecules and solids, which uses numerical atomic orbitals as a basis set for the electronic states. The (harmonic)…

Materials Science · Physics 2007-05-23 J. M. Pruneda , S. K. Estreicher , J. Junquera , J. Ferrer , P. Ordejon

We show that harmonic vibrations in amorphous silicon can be decomposed to transverse and longitudinal components in all frequency range even in the absence of the well defined wave vector ${\bf q}$. For this purpose we define the…

Disordered Systems and Neural Networks · Physics 2016-01-20 Y. M. Beltukov , C. Fusco , A. Tanguy , D. A. Parshin

Quantum effects on the atom delocalization in amorphous silicon have been studied by path-integral Monte Carlo simulations from 30 to 800 K. The quantum delocalization is appreciable vs. topological disorder, as seen from structural…

Disordered Systems and Neural Networks · Physics 2009-10-31 Carlos P. Herrero

The structure of amorphous silicon (a-Si) has been studied for decades. The two main theories are based on a continuous random network and on a `paracrystalline' model, respectively -- the latter being defined as showing localized…

Materials Science · Physics 2024-07-24 Louise A. M. Rosset , David A. Drabold , Volker L. Deringer

We use empirical molecular dynamics technique to study the low-energy vibrations in a large 4096 atom model for pure amorphous silicon and a set of models with voids of different size based on it. Numerical vibrational eigenvalues and…

Disordered Systems and Neural Networks · Physics 2009-10-31 Serge M. Nakhmanson , D. A. Drabold

We have extended our experimentally constrained molecular relaxation technique (P. Biswas {\it et al}, Phys. Rev. B {\bf 71} 54204 (2005)) to hydrogenated amorphous silicon: a 540-atom model with 7.4 % hydrogen and a 611-atom model with 22…

Materials Science · Physics 2009-11-13 Parthapratim Biswas , Raymond Atta-Fynn , David A. Drabold

Numerical studies of amorphous silicon in harmonic approximation show that the highest 3.5% of vibrational normal modes are localized. As vibrational frequency increases through the boundary separating localized from delocalized modes, near…

Disordered Systems and Neural Networks · Physics 2007-05-23 William Garber , Folkert M. Tangerman , Philip B. Allen , Joseph L. Feldman

This paper presents a first-principles study of the Debye-Waller factor and the Debye temperature for amorphous silicon ($a$-Si) from lattice-dynamical calculations and direct molecular-dynamics simulations using density-functional theory…

Materials Science · Physics 2023-07-18 Devilal Dahal , Raymond Atta-Fynn , Stephen R. Elliott , Parthapratim Biswas

Strain in a material induces shifts in vibrational frequencies, which is a probe of the nature of the vibrations and interatomic potentials, and can be used to map local stress/strain distributions via Raman microscopy. This method is…

We present a novel approach for parameter-free modeling of the structural, dynamical and electronic properties of non-crystalline materials based on ab-initio Molecular Dynamics, improved signal processing technique and computer…

Materials Science · Physics 2009-11-13 I. M. Kupchak , F. Gaspari , A. I. Shkrebtii , J. Perz

We have used tight-binding molecular-dynamics simulations to investigate the role of point defects (vacancies and interstitials) on structural relaxation in amorphous silicon. Our calculations give unambiguous evidence that point defects…

Materials Science · Physics 2007-05-23 Cristiano L. Dias , Laurent J. Lewis , S. Roorda

Preparing realistic atom-scale models of amorphous silicon (a-Si) is a decades-old condensed matter physics challenge. Herein, we combine the Activation Relaxation Technique nouveau (ARTn) to a Moment Tensor Potential (MTP) to generate…

Disordered Systems and Neural Networks · Physics 2025-03-25 Karim Zongo , Hao Sun , Claudiane Ouellet-Plamondon , Normand Mousseau , Laurent Karim Béland

We present an O(N) algorithm to study the vibrational properties of amorphous silicon within the framework of tight-binding approach. The dynamical matrix elements have been evaluated numerically in the harmonic approximation exploiting the…

Disordered Systems and Neural Networks · Physics 2009-11-07 Parthapratim Biswas

We use molecular dynamics computer simulations to study the equilibrium properties of the surface of amorphous silica. Two types of geometries are investigated: i) clusters with different diameters (13.5\AA, 19\AA, and 26.5\AA) and ii) a…

Statistical Mechanics · Physics 2009-10-31 Alexandra Roder , Walter Kob , Kurt Binder

The low-frequency range of vibrational spectra is sensitive to collective vibrations of the lattice. In molecular crystals, it can be decisive to identify the structure of different polymorphs, and in addition, it plays an important role on…

Chemical Physics · Physics 2019-05-22 Nathaniel Raimbault , Vishikh Athavale , Mariana Rossi

Structurally disordered materials continue to pose fundamental questions, including that of how different disordered phases ("polyamorphs") can coexist and transform from one to another. As a widely studied case, amorphous silicon (a-Si)…

We present new atomistic models of amorphous silicon (a-Si) and hydrogenated amorphous silicon (a-Si:H) surfaces. The a-Si model included 4096 atoms and was obtained using local orbital density functional theory. By analyzing a slab model…

Materials Science · Physics 2025-06-24 Kishor Nepal , Aashish Gautam , Chinonso Ugwumadu , David Drabold
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