Related papers: Spin-dependent tunnelling through a symmetric barr…
Spin-orbit interaction in semiconductor structures with broken space inversion symmetry leads to spin splitting of electron and hole states even in the absence of magnetic field. We discover that, beyond the Rashba and Dresselhaus…
We review studies on spin-dependent tunneling phenomena in systems containing ferromagnetic nanoparticles. We discuss preparation methods of assembling nanoparticles as well as the mechanisms and results of spin-dependent transport…
The spin-torque in magnetic tunnel junctions possesses two components that both depend on the applied voltage. Here, we develop a new method for the accurate extraction of this bias-dependence from experiments over large voltage ranges. We…
Electron transport through a three-electrode triple-quantum-dot ring with the source electrode of spin-dependent splitting of chemical potentials (spin bias) is theoretically investigated. We find clear charge and spin currents in the drain…
We report on resonant tunneling magnetoresistance via localized states through a ZnSe semiconducting barrier which can reverse the sign of the effective spin polarization of tunneling electrons. Experiments performed on Fe/ZnSe/Fe planar…
A method for measuring the degree of spin polarization of magnetic materials based on spin-dependent resonant tunneling is proposed. The device we consider is a ballistic double-barrier resonant structure consisting of a ferromagnetic layer…
We analyze cotunneling transport through two quantum dots in series weakly coupled to external ferromagnetic leads. In the Coulomb blockade regime the electric current flows due to third-order tunneling, while the second-order…
We present a detailed theoretical study of the electronic spectrum and Zeeman splitting in hole quantum wires. The spin-3/2 character of the topmost bulk-valence-band states results in a strong variation of subband-edge g factors between…
We present a systematic study of the electronic and magnetic properties of transition-metal (TM) atomic chains adsorbed on the zigzag single-wall carbon nanotubes (SWNTs). We considered the adsorption on the external and internal wall of…
We study the effects of spin-orbit coupling on the magnetoconductivity in diffusive cylindrical semiconductor nanowires. Following up on our former study on tubular semiconductor nanowires, we focus in this paper on nanowire systems where…
We demonstrate spin polarized tunneling from Fe through a SiO2 tunnel barrier into a Si n-i-p heterostructure. Transport measurements indicate that single step tunneling is the dominant transport mechanism. The circular polarization, Pcirc,…
Tunneling transport across the p-n-p junction of Weyl semimetal with tilted energy dispersion is investigated. We report that the electrons around different valleys experience opposite direction refractions at the barrier interface when the…
The correlation holes for densities of equal and opposite spin around a test electron are determined from the Schr\"{o}dinger equation with proper boundary conditions. The traditional "exchange" term follows from the boundary condition…
We report the observation of enhanced spin dependent shot noise in magnetic tunnel barriers, suggesting transport through localized states within the barrier. This is supported by the existence of negative magnetoresistance and structure in…
We investigate the spin-dependent transport properties of two-dimensional electron gas (2DEG) systems formed in diluted magnetic semiconductors and in the presence of Rashba spin-orbit interaction in the framework of the scattering matrix…
The linear conductance of the a small metallic tunnel junction embedded in an electromagnetic environment of arbitrary impedance is determined in the semiclassical limit. Electron tunneling is treated beyond the orthodox theory of Coulomb…
A correct general formula for the spin current through an interacting quantum dot coupled to ferromagnetic leads with magnetization at an arbitrary angle $\theta$ is derived within the framework of the Keldysh formalism. Under asymmetric…
Implementing spin functionalities in Si, and understanding the fundamental processes of spin injection and detection, are the main challenges in spintronics. Here we demonstrate large spin polarizations at room temperature, 34% in n-type…
Voltage-driven spin transfer torques in magnetic tunnel junctions provide an outstanding tool to design advanced spin-based devices for memory and reprogrammable logic applications. The non-linear voltage dependence of the torque has a…
The recently observed Seebeck spin tunneling, the thermoelectric analog of spin-polarized tunneling, is described. The fundamental origin is the spin dependence of the Seebeck coefficient of a tunnel junction with at least one ferromagnetic…