Related papers: Spin-dependent tunnelling through a symmetric barr…
Two-dimensional (2D) semiconductor structures of materials without inversion center (e.g. zinc-blende ${\rm A^{III}B^V}$) possess the zero-field conduction band spin-splitting (Dresselhaus term), which is linear and cubic in wavevector $k$,…
We show that pure spin injection from a magnetic electrode into an inversion symmetry-broken system composed of a tunnel barrier and a metallic region generates a transverse charge current. Such a tunnelling spin galvanic conversion is…
We study the tunnelling trough a potential barrier of the system of two quantum correlated particles. The system is considered in one dimension. The interaction with the barrier and between particles is approximated by $\delta$-potentials.…
We present a theoretical study of spin-dependent transport through a ferromagnetic domain wall. With an increase of the number of components of the exchange coupling, we have observed that the variance of the conductance becomes half. As…
We propose the idea of a "spinguide", i.e. the semiconductor channel which is surrounded with walls from the diluted magnetic semiconductor (DMS) with the giant Zeeman splitting which are transparent for electrons with the one spin…
The electron transport properties of hybrid ferromagnetic|normal metal structures such as multilayers and spin valves depend on the relative orientation of the magnetization direction of the ferromagnetic elements. Whereas the contrast in…
We generalize Wentzel-Kramers-Brillouin (WKB) semi-classical equations for pseudospin-1 $\alpha-\mathcal{T}_3$ materials with arbitrary hopping parameter $0 < \alpha < 1$, which includes the dice lattice and graphene as two limiting cases.…
We analyze the broad range of spin-dependent nonequilibrium transport properties of hybrid systems composed of a normal region tunnel coupled to two superconductors with exchange fields induced by the proximity to thin ferromagnetic layers…
Within a wide class of ferromagnetic and antiferromagnetic systems, quantum tunneling of magnetization direction is spin-parity dependent: it vanishes for magnetic particles with half-integer spin, but is allowed for integer spin. A…
Significant scientific and technological progress in the field of spintronics is based on trilayer magnetic tunnel junction devices which principally rely on the physics of single barrier tunneling. While technologically relevant devices…
We consider "shuttling" of spin-polarized electrons between two magnetic electrodes (half-metals) by a movable dot with a single electronic level. If the magnetization of the electrodes is antiparallel we show that the transmittance of the…
We investigate the influence of a magnetic field on the electronic properties of WS$e_2$ with a focus on spin-orbit coupling, spin and valley polarization, and conductance. We solve the eigenvalue equation analytically and use the…
Material systems that exhibit tunable spin-selective conductivity are key components of spintronic technologies. Here we demonstrate a novel type of spin-selective transport, based on the unusual Landau level (LL) sequence observed in…
We report on theoretical investigations of scattering asymmetry vs. incidence of carriers through exchange barriers and magnetic tunnel junctions made of semiconductors involving spin-orbit interaction. By an analytical 2?2 spin model, we…
We study the spin orbit torque arising from an intrinsic linear Dresselhaus spin-orbit coupling in a single layer III-V diluted magnetic semiconductor. We investigate the transport properties and spin torque using the linear response theory…
Coherent spin-dependent electronic transport is investigated in a molecular junction made of polymeric chain attached to ferromagnetic electrodes (Ni and Co, respectively). Molecular system is described by a simple Huckel model, while the…
Efficient conversion of a spin signal into an electric voltage in mainstream semiconductors is one of the grand challenges of spintronics. This process is commonly achieved via a ferromagnetic tunnel barrier where non-linear electric…
We describe theoretically the process of multi-beam reflection in a two-dimensional electron system with a lateral potential barrier. Due to spin-orbital interaction, the reflection process leads to the formation of three beams with…
We study electron transport in monolayer molybdenum disulfide MoS$_2$ subjected to a magnetic barrier. Our analysis employs a full-band continuum model to capture the relevant physical phenomena. We focus on how electron energy, magnetic…
A mesoscopic spin valve is used to determine the effective spin polarization of electrons tunneling from and into ferromagnetic transition metals at finite voltages. The tunneling spin polarization from the ferromagnet (FM) slowly decreases…