Related papers: Spin injection efficiency from two adjoining ferro…
Using the method of superbosonization we consider a model of a random magnetic field (RMF) acting on both orbital motion and spin of electrons in two dimensions. The method is based on exact integration over one particle degrees of freedom…
The energy density method is generalized to include spin polarization with the full formalism derived based on spin-density functional theory, which aims at decomposing the total energy into well-defined atomic energies. The method involves…
We derive a kinetic equation for the electrons moving on the surface of a three-dimensional topological insulator. Due to the helical nature of the excitations backward scattering is suppressed in the collision integral, and the spin…
Spontaneous magnetization of a two-dimensional electron gas (2DEG) is discussed. It takes place for sufficiently high electron density (i.e. for a quantum fluid state) with $r_s<10$ which is quite beyond the condition of Wigner…
Properties are discussed of a ferromagnetic junction of the type "rod contacting with film". Very high current density of the order of $10^9$ A/cm$^2$ may be achieved in the contact region. We show it can lead to inversion of population of…
We present simulations of an imaging mechanism that reveals the trajectories of electrons in a two-dimensional electron gas (2DEG), as well as simulations of the electron flow in zero and small magnetic fields. The end goal of this work is…
We report the first experimental demonstration that interface microstructure limits diffusive electrical spin injection efficiency across heteroepitaxial interfaces. A theoretical treatment shows that the suppression of spin injection due…
Electrical spin injection from the Heusler alloy Co_2MnGe into a p-i-n Al_0.1Ga_0.9As/GaAs light emitting diode is demonstrated. A maximum steady-state spin polarization of approximately 13% at 2 K is measured in two types of…
The effective g-factor ($g^{*}$) of a dilute interacting two-dimensional electron system is expected to increase with respect to its bare value as the density is lowered, and to eventually diverge as the system makes a transition to a…
The Rashba-split two-dimensional electron gas (2DEG) at the surface and interface of insulating oxides like KTaO$_{3}$ (KTO) shows great promise for all-oxide spintronics. However, efficient spin current injection into the adjacent 2DEG…
The 2-D electron system (2DES) in Si metal-oxide field-effect transistors (MOSFETS) consists of two distinct electron fluids interacting with each other. We calculate the total energy as a function of the density $n$, and the spin…
Selective and large polarization of current injected into semiconductor (SC) is predicted in Ferromagnet (FM)/Quantum Dot (QD)/SC system by varying the gate voltage above the Kondo temperature. In addition, spin-dependent Kondo effect is…
We study the temperature flow of conductivities in a gated GaAs two-dimensional electron gas (2DEG) containing self-assembled InAs dots and compare the results with recent theoretical predictions. By changing the gate voltage, we are able…
We explore a spin Josephson effect in a system of two ferromagnets coupled by a tunnel junction formed of 2D time-reversal invariant topological insulators. In analogy with the more commonly studied instance of the Josephson effect for…
The spin polarization of the electron current in a p-(Ga,Mn)As-n-(Al,Ga)As-Zener tunnel diode, which is embedded in a light-emitting diode, has been studied theoretically. A series of self-consistent simulations determines the charge…
We explore electrically injected, spin polarized transport in a ballistic two-dimensional electron gas. We augment the Buettiker-Landauer picture with a simple, but realistic model for spin-selective contacts to describe multimode…
We treat the spin injection and extraction via a ferromagnetic metal/semiconductor Schottky barrier as a quantum scattering problem. This enables the theory to explain a number of phenomena involving spin-dependent current through the…
We propose a spin-dependent resonant tunneling structure to efficiently inject spin-polarized current into silicon (Si). By means of a heavily doped polycrystalline Si (Poly-Si) between the ferromagnetic metal (FM) and Si to reduce the…
Nature creates electrons with two values of the spin projection quantum number. In certain applications, it is important to filter electrons with one spin projection from the rest. Such filtering is not trivial, since spin-dependent…
We formulate a theory of current-induced spin torques in inhomogeneous III-V ferromagnetic semiconductors. The carrier spin-3/2 and large spin-orbit interaction, leading to spin non-conservation, introduce significant conceptual differences…