Related papers: Step bunching during Si(001) homoepitaxy caused by…
We use kinetic Monte Carlo simulations to understand growth- and etching-induced step bunching of 6H-SiC{0001} vicinal surfaces oriented towards [1-100] and [11-20]. By taking account of the different rates of surface diffusion on three…
We study the effect of two-dimensionality on step bunching induced by drift of adatoms. When anisotropy of the diffusion coefficient changes alternately on consecutive terraces like a Si(001) vicinal face, bunching occurs with the drift of…
Si/Ge heteroepitaxial dots under tensile strain are grown on nanostructured Ge substrates produced by high-temperature flash heating exploiting the spontaneous faceting of the Ge(001) surface close to the onset of surface melting. A very…
We introduce a simple two region model where the diffusion constant in a small region around each step on a vicinal surface can differ from that found on the terraces. Steady state results for this model provide a physically suggestive…
A sublimating vicinal crystal surface can undergo a step bunching instability when the attachment-detachment kinetics is asymmetric, in the sense of a normal Ehrlich-Schwoebel effect. Here we investigate this instability in a model that…
Step meandering during growth of gallium nitride (0001) surface is studied using kinetic Monte Carlo method. Simulated growth process, conducted in N-rich conditions are therefore controlled by Ga atoms surface diffusion. The model employs…
We studied the step dynamics during sublimation and growth in the presence of electromigration force acting on the adatoms. In the limit of fast surface diffusion and slow kinetics of atom attachment-detachment at the steps we formulate a…
We study a minimal stochastic model of step bunching during growth on a one-dimensional vicinal surface. The formation of bunches is controlled by the preferential attachment of atoms to descending steps (inverse Ehrlich-Schwoebel effect)…
In order to study the unstable step motion on vicinal crystal surfaces we devise vicinal Cellular Automata. Each cell from the colony has value equal to its height in the vicinal, initially the steps are regularly distributed. Another array…
Below the roughening transition, crystal surfaces exhibit nanoscale line defects, steps, that move by exchanging atoms with their environment. In homoepitaxy, we analytically show how the motion of a step train in vacuum under strong…
The distinction between absolute and convective instabilities is well known in the context of hydrodynamics and plasma physics. In this Letter, we examine an epitaxial crystal growth model from this point of view and show that a…
The steps at the crystal surfaces could be transparent for the migrating adatoms. In the case of significant transparency the velocity of a given step in a given moment is affected by detachment of atoms from rather distant steps in rather…
The planar front of a growing a crystal is often destroyed by instabilities. In the case of growth from a condensed phase, the most frequent ones are diffusion instabilities, which will be but briefly discussed in simple terms in chapter…
We study the effect of crystal symmetry and step-edge diffusion on the surface current governing the evolution of a growing crystal surface. We find there are two possible contributions to anisotropic currents, which both lead to the…
The quasistatic approximation is a useful but questionable simplification for analyzing step instabilities during the growth/evaporation of vicinal surfaces. Using this approximation, we characterized in Part I of this work the effect on…
We study the evolution of step bunches on vicinal surfaces using a thermodynamically consistent step-flow model that (i) circumvents the quasistatic approximation that prevails in the literature by accounting for the dynamics of adatom…
We formulate a new (1+1)D step model of potentially unstable vicinal growth that we call "C+ - C-" model and study the step bunching process in it. The basic assumption is that the equilibrium adatom concentrations on both sides of the step…
Using scanning tunneling microscopy (STM), we investigate oxide-induced growth pits in Si thin films deposited by molecular beam epitaxy. In the transition temperature range from 2D adatom islanding to step-flow growth, systematic…
Homoepitaxial growth is unstable towards the formation of pyramidal mounds when interlayer transport is reduced due to activation barriers to hopping at step edges. Simulations of a lattice model and a continuum equation show that a small…
The coarsening dynamics of three-dimensional islands on a growing film is discussed. It is assumed that the origin of the initial instability of a planar surface is the Ehrlich-Schwoebel step-edge barrier for adatom diffusion. Two…