Related papers: Electrometry on charge traps with a single-electro…
The current understanding of charge transfer dynamics in Charge-Coupled Devices (CCDs) is that charge is moved so quickly from one phase to the next in a clocking sequence and with a density so low that trapping of charge in the inter-phase…
In this work, the threshold voltage instability of normally-off p-GaN high electron mobility transistors (HEMTs) has been investigated by monitoring the gate current density during device on-state. The origin of the gate current variations…
We analyze the behavior of a Cooper Pair Box (CPB) that is coupled to charge fluctuators that reside in the dielectric barrier layer in the box's ultra-small tunnel junction. We derive the Hamiltonian of the combined system and find the…
The effects of electromagnetic vacuum fluctuations with the boundary on charged particles is investigated. They may be observed via an electron interference experiment near the conducting plate, where boundary effects of vacuum fluctuations…
Electron transport in nano-scale structures is strongly influenced by the Coulomb interaction which gives rise to correlations in the stream of charges and leaves clear fingerprints in the fluctuations of the electrical current. A complete…
In this work, we investigate the dynamics of a single electron surface trap, embedded in a self-assembly metallic double-dot system. The charging and discharging of the trap by a single electron is manifested as a random telegraph signal of…
Electrometers measure electric charge, but there must be a fundamental speed limit to measuring one electric charge. Since there are no dimensional inputs to this question, the answer must be expressible in terms of the fundamental physical…
Thermodynamic parameters such as temperature and pressure can be defined from the statistical behavior of a system. Therefore, thermal fluctuation is an inseparable characteristic of these parameters which eventually finds its way into…
We study the problem of an electron in two dimensions in the presence of a magnetic vortex with a step-like profile. Dependending on the values of the effective mass and gyromagnetic factor of the electron, it may be trapped by the vortex.…
We report a new method to study two level fluctuators (TLFs) by measuring the offset charge induced after applying a sudden step voltage to the gate electrode of a single electron transistor. The offset charge is measured for more than 20…
The inelastic scattering of electrons is one route to study the vibrational and electronic properties of materials. Such experiments, also called electron energy-loss spectroscopy, are particularly useful for the investigation of the…
We present a detailed optical study of single crystal bismuth using infrared reflectivity and ellipsometry. Colossal changes in the plasmon frequency are observed as a function of temperature due to charge transfer between hole and electron…
Single-electron effects have been widely investigated as a typical physical phenomenon in nanoelectronics. The single-electron effect caused by trap sites has been observed in many devices. In general, traps are randomly distributed and not…
We investigate background charge fluctuation in a GaAs quantum dot device by measuring 1/f noise in the single-electron tunneling current through the dot. The current noise is understood as fluctuations of the confinement potential and…
Single-electron pumps based on isolated impurity atoms have recently been experimentally demonstrated. In these devices the Coulomb potential of an atom creates a localised electron state with a large charging energy and considerable…
Classical molecular dynamics simulations have recently become a standard tool for the study of electrochemical systems. State-of-the-art approaches represent the electrodes as perfect conductors, modelling their responses to the charge…
We review the status of the understanding of single-electron transport (SET) devices with respect to their applicability in metrology. Their envisioned role as the basis of a high-precision electrical standard is outlined and is discussed…
Electronic trap states are a critical yet unavoidable aspect of semiconductor devices, impacting performance of various electronic devices such as transistors, memory devices, solar cells, and LEDs. The density, energy level, and position…
A model of strongly disordered lattice system with long-range Coulomb interactions between localized charge carriers has been considered. The total electronic energy is characterized by the presence of multiple metastable minima (including…
Quantum vacuum fluctuations of the electromagnetic field result in two signatures on a harmonically trapped charged particle: a shift from the natural trap frequency and generation of quantum coherences. We assess the role of the…