Related papers: All-optical single-electron read-out devices based…
Van der Waals interactions are ubiquitous and they play an important role for the stability of materials. Current understanding of this type of coupling is based on linear response theory, while optical nonlinearities are rarely considered…
Owing to the large breakdown electric field, wide bandgap semiconductors such as SiC, GaN, Ga2O3 and diamond based power devices are the focus for next generation power switching applications. The unipolar trade-off relationship between the…
In this work we develop a semi-analytical variational ansatz to study the properties of few photon excitations interacting with a collection of quantum emitters in regimes that go beyond the rotating wave approximation. This method can be…
A central spin qubit interacting coherently with an ensemble of proximal spins can be used to engineer entangled collective states or a multi-qubit register. Making full use of this many-body platform requires tuning the interaction between…
The electronic properties of semiconductor, vertical, double quantum dot systems with few electrons are investigated by means of analytic, configuration-interaction, and mean-field methods. The combined effect of a high magnetic field,…
Systems of adatoms on semiconductor surfaces display competing ground states and exotic spectral properties typical of two-dimensional correlated electron materials which are dominated by a complex interplay of spin and charge degrees of…
A highly sensitive charge detector is realized for a quantum dot in an InAs nanowire. We have developed a self-aligned etching process to fabricate in a single step a quantum point contact in a two-dimensional electron gas and a quantum dot…
The technique of dispersive gate sensing (DGS) uses a single electrode to readout a qubit by detecting the change in quantum capacitance due to single electron tunnelling. Here, we extend DGS from the detection of discrete tunnel events to…
A consistent semiquantitative theoretical analysis of electronic Raman scattering from many-electron quantum dots under resonance excitation conditions has been performed. The theory is based on random-phase-approximation-like wave…
We show that the addition spectra of semiconductor quantum dots in the presence of magnetic field can be studied through a theoretical scheme that allows an accurate and practical treatment of the single particle states and…
We have studied interactions between two capacitively coupled GaAs/AlGaAs few-electron double quantum dots. Each double quantum dot defines a tunable two-level system, or qubit, in which a single excess electron occupies either the ground…
The low-lying eigenstates of a system of two electrons confined within a two-dimensional quantum dot with a hard polygonal boundary are obtained by means of exact diagonalization. The transition from a weakly correlated charge distribution…
We report the dispersive charge-state readout of a double quantum dot in the few-electron regime using the in situ gate electrodes as sensitive detectors. We benchmark this gate-sensing technique against the well established quantum point…
All-electron configuration interaction theory in the framework of the Dirac-Coulomb Hamiltonian has been applied to the TaN molecule, a promising candidate in the search for Beyond-Standard-Model physics in both the hadron and the lepton…
Precise absolute far-infra-red magneto-transmission experiments have been performed in magnetic fields up to 33 T on a series of single GaAs quantum wells doped at different levels. The transmission spectra have been simulated with a…
We demonstrate single-charge occupation of ambipolar quantum dots in silicon via charge sensing. We have fabricated ambipolar quantum dot (QD) devices in a silicon metal-oxide-semiconductor heterostructure comprising a single-electron…
We propose and analyze an optically loaded quantum memory exploiting capacitive coupling between self-assembled quantum dot molecules and electrically gated quantum dot molecules. The self-assembled dots are used for spin-photon…
A theory is presented to show how near-field optical microscopy can be used to probe quantum nanostructures. Calculations are done for a quantum dot. Results for different tip/dot configurations and sizes show that near-field excitation can…
The recent progress in formation of two-dimensional (2D) GaN by a migration-enhanced encapsulated technique opens up new possibilities for group III-V 2D semiconductors with a band gap within the visible energy spectrum. Using…
We demonstrate full charge control, narrow optical linewidths, and optical spin pumping on single self-assembled InGaAs quantum dots embedded in a $162.5\,\text{nm}$ thin diode structure. The quantum dots are just $88\,\text{nm}$ from the…