Related papers: Spin-dependent electron transport through a ferrom…
We develop a theory of non-linear growth direction transport in magnetically doped II-VI compound semiconductor multiple-quantum-well systems. We find that the formation of electric field domains can be controlled by manipulating the space…
All-electrical and programmable manipulations of ferromagnetic bits are highly pursued for the aim of high integration and low energy consumption in modern information technology. Methods based on the spin-orbit torque switching in heavy…
Spintronics devices rely on spin-dependent transport behavior evoked by the presence of spin-polarized electrons. Transport through nanostructures, on the other hand, is dominated by strong Coulomb interaction. We study a model system in…
Spin-charge states of correlated electrons in a one-dimensional quantum dot attached to interacting leads are studied in the non-linear transport regime. With non-symmetric tunnel barriers, regions of negative differential conductance…
Interfacial ferroelectricity offers a promising platform for ultrafast, low-power memory devices. While previous studies have demonstrated the importance of domain wall in polarization switching, the coexistence of various domain wall types…
We study spin accumulation and spin transfer torque in a domain wall by solving the Boltzmann equation with a diffusion approximation. We obtained the analytical expressions of spin accumulation and spin transfer torque. Both the adiabatic…
We calculate the electron-mediated exchange interaction between two domain walls in magnetic wires. This corresponds to the equilibrium regime and, therefore, the interaction can be additionally controlled by an electric current. The…
Antiferromagnetism couples electron spin to its orbital motion, thus allowing excitation of electron-spin transitions by an ac electric rather than magnetic field - with absorption, exceeding that of common electron spin resonance at least…
We propose an effect whereby an electric current along the interface between a ferromagnetic and normal metal leads to injection of pure spin current into the normal metal, if the magnetization-direction in the ferromagnet varies along the…
We calculate the interaction between two magnetic domain walls during their current-induced motion. This interaction produces a separation-dependent resistance and also a differential velocity, causing domains in motion to experience an…
We perform real-space imaging of propagating magnetic domains in the fractional quantum Hall system using spin-sensitive photoluminescence microscopy. The propagation is continuous and proceeds in the direction of the conventional current,…
We develop a theory for spin transported by coherent Neel dynamics through an antiferromagnetic insulator coupled to a ferromagnetic insulator on one side and a current-carrying normal metal with strong spin-orbit coupling on the other. The…
The spin Hall effect in a heavy metal intercorrelates an AC electric current to the magnetization dynamics in an adjacent ferromagnet, which manifests as an electric reactance in the system's current-voltage response. We present a…
Compensated ferrimagnets are promising materials for fast spintronic applications based on domain wall motion as they combine the favourable properties of ferromagnets and antiferromagnets. They inherit from antiferromagnets immunity to…
Spin Hall magnetoresistance (SMR) refers to a resistance change in a metallic film reflecting the magnetization direction of a magnet attached to the film. The mechanism of this phenomenon is spin exchange between conduction-electron spins…
The spin transfer torque generated by a spin-polarized current can induce the shift of the magnetic domain-wall position. In this work, we study theoretically the current-induced domain-wall motion by using the collective coordinate…
In ferromagnetic metals, the interconversion of spin and charge currents via the spin Hall effect and its inverse can depend on the angle between the ferromagnets magnetization and the spin current polarization direction. Here, such a…
In this work we investigate the spin-dependent transport through a double quantum dot embedded in a ferromagnetic tunnel junction and side attached to a topological superconducting nanowire hosting Majorana zero-energy modes. We focus on…
Domain walls in ferroelectric oxides provide fertile ground for the development of next-generation nanotechnology. Examples include domain-wall-based memory, memristors, and diodes, where the unusual electronic properties and the quasi-2D…
A novel scheme for spin filters is proposed by studying the coherent transport of electrons through the quantum wires with lateral magnetic modulations. Unlike other schemes in the literature, the modulation in our scheme is much weaker…