English
Related papers

Related papers: Defect correlations, metal-insulator transition, a…

200 papers

The effect of disorder on transport and magnetization in ferromagnetic III-V semiconductors, in particular (Ga,Mn)As, is studied theoretically. We show that Coulomb-induced correlations of the defect positions are crucial for the transport…

Materials Science · Physics 2009-11-07 C. Timm , F. Schäfer , F. von Oppen

In this paper we review the latest achievements of density functional theory in understanding the physics of diluted magnetic semiconductors. We focus on transition metal doped III-V semiconductors, which show spontaneous ferromagnetic…

Materials Science · Physics 2007-05-23 S. Sanvito , G. Theurich , N. A. Hill

This paper, based on a presentation at the Spintronics 2001 conference, provides a review of our studies on II-VI and III-V Mn-doped Diluted Magnetic Semiconductors. We use simple models appropriate for the low carrier density (insulating)…

Materials Science · Physics 2007-05-23 R. N. Bhatt , Mona Berciu , Malcolm P. Kennett , Xin Wan

We present results of a numerical mean field treatment of interacting spins and carriers in doped diluted magnetic semiconductors, which takes into account the positional disorder present in these alloy systems. Disorder is found to enhance…

Disordered Systems and Neural Networks · Physics 2009-10-31 Mona Berciu , R. N. Bhatt

The ferromagnetic transition in a diluted magnetic semiconductor with localized charge carriers is inevitably a percolation transition. In this work we theoretically study the correlation between this magnetic percolation and transport…

Materials Science · Physics 2009-11-10 A. Kaminski , S. Das Sarma

We present a quantitative theory for ferromagnetism in diluted III-V ferromagnetic semi-conductors in the presence of the two types of defects commonly supposed to be responsible for compensation: As anti-sites and Mn interstitials. In each…

Disordered Systems and Neural Networks · Physics 2007-05-23 Georges ~Bouzerar , Timothy Ziman , Josef Kudrnovský

The possibility of half-metallic antiferromagnetism, a special case of ferrimagnetism with a compensated magnetization, in the diluted magnetic semiconductors is highlighted on the basis of the first principles electronic structure…

Materials Science · Physics 2009-11-11 H. Akai , M. Ogura

We present a detailed study, within the mean-field approximation, of an impurity band model for III-V diluted magnetic semiconductors. Such a model should be relevant at low carrier densities, below and near the metal-insulator transition.…

Mesoscale and Nanoscale Physics · Physics 2007-05-23 Mona Berciu , R. N. Bhatt

We have investigated the interplay between the metal-insulator transition and ferromagnetism in $({\rm III}_{1-x},{\rm Mn}_x){\rm V}$ ferromagnetic semiconductors. Our study is based on a model in which $S=5/2$ Mn local moments are…

Condensed Matter · Physics 2009-11-07 S. -R. Eric Yang , A. H. MacDonald

The interplay between strong electron correlation and band topology is at the forefront of condensed matter research. As a direct consequence of correlation, magnetism enriches topological phases and also has promising functional…

The substitution of Mn in the III-V diluted magnetic semiconductors leads to a strong electron scattering on impurities. Besides the features induced in the valence band by the hybridization with the Mn d-states, also the conduction band is…

Materials Science · Physics 2007-05-23 J. Masek , F. Maca

In this contribution we would like to revisit the problems of ferromagnetism (F) and antiferromagnetism (AF) in the pure itinerant model. These methods can be extended later to the superconducting materials. In our model we assume the…

Strongly Correlated Electrons · Physics 2016-08-16 G. Górski , J. Mizia

The rapidly developing field of ferromagnetism in diluted magnetic semiconductors, where a semiconductor host is magnetically doped by transition metal impurities to produce a ferromagnetic semiconductor (e.g. Ga_{1-x}Mn_xAs with x ~ 1-10…

Materials Science · Physics 2009-11-10 S. Das Sarma , E. H. Hwang , A. Kaminski

The origin of ferromagnetism in semimagnetic III-V materials is discussed. The indirect exchange interaction caused by virtual electron excitations from magnetic impurity level in the bandgap to the valence band can explain ferromagnetism…

Materials Science · Physics 2009-11-07 V. I. Litvinov , V. K. Dugaev

We address the role of correlations between spin and charge degrees of freedom on the dynamical properties of ferromagnetic systems governed by the magnetic exchange interaction between itinerant and localized spins. For this we introduce a…

Strongly Correlated Electrons · Physics 2008-08-25 M. D. Kapetanakis , I. E. Perakis

Diluted magnetic semiconductors (DMS) are interesting because of the interplay between the electronic and magnetic subsystems. We describe selected magnetic properties of IV-VI diluted magnetic semiconductors, looking at the similarities…

Materials Science · Physics 2023-08-04 M. Górska , Ł. Kilański , A. Łusakowski

The theory of the I-V characteristics in diffusive superconductor/weak ferromagnet/superconductor (SFS) junction is developed. We show that the exchange field $h$ of the ferromagnet manifests itself as an additional conductance peak at $eV…

Superconductivity · Physics 2009-11-11 I. V. Bobkova , A. M. Bobkov

We have analyzed the magnetic interactions of a five orbital model for iron superconductors treated both within Hartree-Fock and Heisenberg approximations. We have found that the exchange constants depend non-trivially on the Fe-As-Fe angle…

Strongly Correlated Electrons · Physics 2012-10-08 M. J. Calderon , G. Leon , B. Valenzuela , E. Bascones

Diluted magnetic semiconductors (DMSs), in which magnetic elements are substituted for a small fraction of host elements in a semiconductor lattice, can become ferromagnetic when doped. In this article we discuss the physics of DMS…

Materials Science · Physics 2009-11-07 Byounghak Lee , T. Jungwirth , A. H. MacDonald

A close link between the charge transfer electronic structures and polarity dependent high-TC ferromagnetism of TM2+:ZnO DMSs (TM2+ = 3d ions) is demonstrated. Trends in ferromagnetism across the 3d series of TM2+:ZnO DMSs predicted from…

Materials Science · Physics 2007-05-23 Kevin R. Kittilstved , William K. Liu , Daniel R. Gamelin
‹ Prev 1 2 3 10 Next ›