Related papers: Low-temperature spin relaxation in n-type GaAs
Spin relaxation was studied in a two-dimensional electron gas confined in a wide GaAs quantum well. Recently, the control of the spin relaxation anisotropy by diffusive motion was first shown in D. Iizasa et al., arXiv:2006.08253 (2020).…
We present numerical results for electron spin relaxation rates for single and laterally coupled double GaAs quantum dots in a perpendicular magnetic field. As source of spin relaxation we consider hyperfine interaction with the nuclear…
We investigate the spin relaxation and spin dephasing of $n$-type GaAs quantum wells. We obtain the spin relaxation time $T_1$, the spin dephasing time $T_2$ and the ensemble spin dephasing time $T_2^{\ast}$ by solving the full microscopic…
We comment on the conclusion by Teng et al. [J. Phys. D: Appl. Phys. {\bf 42}, 135111 (2009)] that the Bir-Aronov-Pikus mechanism is more important than the D'yakonov-Perel' mechanism at high carrier density in intrinsic bulk GaAs. We point…
Multi-valley spin relaxation in $n$-type GaAs quantum wells with in-plane electric field is investigated at high temperature by means of kinetic spin Bloch equation approach. The spin relaxation time first increases and then decreases with…
To determine the state of spin polarization of the 3D electron gas at very low densities and zero temperature, we calculate the energy versus spin polarization using Diffusion Quantum Monte Carlo methods with backflow wavefunctions and…
Nuclear spin-lattice relaxation times are measured on copper using magnetic resonance force microscopy performed at temperatures down to 42 mK. The low temperature is verified by comparison with the Korringa relation. Measuring spin-lattice…
A high frequency (111.2-420 GHz) electron spin resonance study of the inter-layer (perpendicular) spin diffusion as a function of pressure and temperature is presented in the conducting phases of the layered organic compounds,…
We investigate theoretically the D'yakonov-Perel' spin relaxation time by solving the eight-band Kane model and Poisson equation self-consistently. Our results show distinct behavior with the single-band model due to the anomalous…
Finite-temperature local spin dynamics within the random spin-1/2 antiferromagnetic Heisenberg chain is studied numerically. The aim is to explain measured NMR spin-lattice relaxation times in BaCu_{2}(Si_{0.5}Ge_{0.5})_{2}O_{7}, which is…
We use optical transient-grating spectroscopy to measure spin diffusion of optically oriented electrons in bulk, semi-insulating GaAs(100). Trapping and recombination do not quickly deplete the photoexcited population. The spin diffusion…
The spin dynamics of localized donor-bound electrons interacting with the nuclear spin ensemble in $n$-doped GaAs epilayers is studied using nuclear spin polarization by light with modulated circular polarization. We show that the observed…
Spin dephasing by the Dyakonov-Perel mechanism in metallic films deposited on insulating substrates is revealed, and quantitatively examined by means of density functional calculations combined with a kinetic equation. The…
By means of time-resolved optical orientation under strong optical pumping, the k-dependence of the electron spin-flip time (t_sf) in undoped GaAs is experimentally determined. t_sf monotonically decreases by more than one order of…
We study the low-temperature dynamics of a shallow donor, e.g., $^{31}$P, impurity electron spin in silicon, interacting with the bath of nuclear spins of the $^{29}$Si isotope. For small applied magnetic fields, the electron spin…
We study the transport of spin polarized electrons in n-GaAs using spatially resolved continuous wave Faraday rotation. From the measured steady state distribution, we determine spin relaxation times under drift conditions and, in the…
We describe a theory of Mn local-moment magnetization relaxation due to p-d kinetic-exchange coupling with the itinerant-spin subsystem in the ferromagnetic semiconductor (Ga,Mn)As alloy. The theoretical Gilbert damping coefficient implied…
We investigate properties of doping-induced metal-insulator transition in GaN:Si by means of electron spin resonance and Hall effect. While increasing the doping concentration, Si-related bands are formed below the bottom of the GaN…
We review some of the newest findings on the spin dynamics of carriers and excitons in GaAs/GaAlAs quantum wells. In intrinsic wells, where the optical properties are dominated by excitonic effects, we show that exciton-exciton interaction…
We used time-resolved Kerr rotation technique to study the electron spin coherence in a comprehensive set of bulk CdTe samples with various concentrations of electrons that were supplied by n-type doping. The electron spin coherence time of…