Related papers: Analysis of integrated single-electron memory oper…
We study strong tunneling (i.e. transmission $h/e^2R_T \gg 1$) in the single-electron box with many transverse modes at zero temperature. We develop a new renormalization group method which includes all charge states and requires no initial…
We have investigated the conductance properties of C60-containing self-assembled monolayers (SAMs), which are used in organic field-effect transistors, employing a combination of molecular-dynamics simulations, semiempirical electronic…
We present an experimental and theoretical study of a magnetic single-molecule transistor based on N@C60 connected to gold electrodes. Particular attention is paid to the regime of intermediate molecule-lead coupling, where cotunneling…
Tunneling between a photo-excited p-type silicon tip and a gold surface is studied as a function of tip bias, tip/sample distance and light intensity. In order to extend the range of application of future spin injection experiments, the…
As a promising alternative to the Von Neumann architecture, in-memory computing holds the promise of delivering high computing capacity while consuming low power. Content addressable memory (CAM) can implement pattern matching and distance…
Single-electron pumps based on isolated impurity atoms have recently been experimentally demonstrated. In these devices the Coulomb potential of an atom creates a localised electron state with a large charging energy and considerable…
Three terminal single-electron transistor devices utilizing Al/Al2O3 gate electrodes were developed for the study of electron transport through individual single-molecule magnets. The devices were patterned via multiple layers of optical…
It has been predicted that in the presence of a sufficiently high-dissipative environment transport in a small tunnel junction can become extremely regular, giving rise to the phenomenon of single-electron tunneling oscillations. Recent…
An electron transport is studied in the system which consists of scanning tunneling microscopy-single molecule magnet-metal. Due to quantum tunneling of magnetization in single-molecule magnet, linear response conductance exhibits stepwise…
Non-equilibrium Green's functions (NEGF) formalism combined with extended Huckel (EHT) and charging model are used to study electrical conduction through single-molecule junctions. Analyzed molecular complex is composed of asymmetric…
We present theoretical results on far-infrared (FIR) absorption of single-electron transistors. Based on them, we propose and explain how to conduct combined FIR--dc-transport experiments to determine the charging energy and other relevant…
State of the art quantum transport models for semiconductor nanodevices attribute negative (positive) unit charges to states of the conduction (valence) band. Hybrid states that enable band-to-band tunneling are subject to interpolation…
A new non-ballistic analytical model for the intrinsic channel region of MOSFET-like single-walled carbon-nanotube field-effect transistors with ohmic contacts has been developed which overcomes the limitations of existing models and…
In all theoretical treatments of electron transport through single molecules between two metal electrodes, a clear distinction has to be made between a coherent transport regime with a strong coupling throughout the junction and a Coulomb…
We review recent progresses in the theoretical description of correlation and quantum fluctuation phenomena in charge transport through single molecules, quantum dots, and quantum wires. A variety of physical phenomena is addressed,…
A combination of the memory function formalism and time-dependent density-functional theory is applied to transport in dilute magnetic semiconductors. The approach considers spin and charge disorder and electron-electron interaction on an…
Theoretical modeling of electroosmosis through conducting (ideally polarizable) nanochannels is reported. Based on the theory of induced charge electrokinetics, a novel nanofluidic system which possesses both adjustable ion selective…
The possibility of performing single spin measurements in Si-based quantum computers through electric field control of electrons bound to double donors near a barrier interface is assessed. We find that both the required electric fields and…
A model of superconducting computer memory exploiting the orthogonal spin transfer (OST) in the pseudospin valve (PS) that is controlled by the three-terminal Josephson superconducting-ferromagnetic transistor (SFT) is developed. The…
Monte Carlo simulations and an analytical approach within the framework of a semiclassical model are presented which permit the determination of Coulomb blockade and single electron charging effects for multiple tunnel junctions coupled in…