Related papers: Thickness-Dependence of the Coercive Field in Ferr…
Domain wall dynamics in ferroic materials underpins functionality of data storage and information technology devices. Using localized electric field of a scanning probe microscopy tip, we experimentally demonstrate a surprisingly rich range…
Ferroelectric switching is unambigiously demonstrated for the first time in a III-V semiconductor based material: AlScN -- A discovery which could help to satisfy the urgent demand for thin film ferroelectrics with high performance and good…
We investigate the polarization switching mechanism in ferroelectric-dielectric (FE-DE) stacks and its dependence on the dielectric thickness (TDE). We fabricate HZO-Al2O3 (FE-DE) stack and experimentally demonstrate a decrease in remnant…
Wurtzite ferroelectrics such as scandium-doped aluminum nitride (AlScN) are promising for next-generation memory because of their compatibility with semiconductor processes and strong spontaneous polarization. Ferroelectric switching in…
We theoretically explore mechanisms that can potentially give rise to the steady-state and transient negative capacitance in a uniaxial ferroelectric film stabilized by a dielectric layer. The analytical expressions for the steady-state…
Proximity ferroelectricity is a novel paradigm for inducing ferroelectricity in a non-ferroelectric polar material such as AlN or ZnO that are typically unswitchable with an external field below their dielectric breakdown field. When placed…
We present studies on magnetic nano-structures with 3D architectures, fabricated using electrodeposition in the pores of well-ordered templates prepared by self-assembly of polystyrene latex spheres. The coercive field is found to…
A microscopic model for describing ferroelectric nanoparticles is proposed which allows us to calculate the polarization as a function of an external electric field, the temperature, the defect concentration and the particle size. The…
A comprehensive theory for electronic transport in itinerant ferromagnets is developed. We first show that the Q-field theory used previously to describe a disordered Fermi liquid also has a saddle-point solution that describes a…
The role of the surface during polarization switching in constrained ferroelectrics is investigated using the time-dependent Ginzburg-Landau theory. The model incorporates the elastic and electrostrictive effects in the form of a long-range…
Terahertz time-domain conductivity measurements in 2 to 100 nm thick iron films resolve the femtosecond time delay between applied electric fields and resulting currents. This response time decreases for thinner metal films. The macroscopic…
The first epitaxial ferroelectric wurtzite film with clear polarization-electric field hysteresis behavior is presented. The coercive field of this epitaxial Al0.7Sc0.3N film on W/c-sapphire substrate is 0.4 +- 0.3 MV cm-1 (8 %) smaller…
T.W. Noh and his group (Kim et al.: PRL, 2005) have recently published a seminal experimental study of very thin ferroelectric (FE) BaTiO3 capacitors. They found an evidence that all their samples, including the thinnest one (d=5 nm), are…
Hard-soft bilayers are analogous to prototype exchange-biased ferromagnetic -antiferromagnetic systems as the minor loop of the soft layer is biased by the hard and furthermore they offer bias layer tunability. In sputtered CoPt/Co…
Introducing structural and/or chemical heterogeneity into otherwise ordered crystals can dramatically alter material properties. Lead-based relaxor ferroelectrics are a prototypical example, with decades of investigation having connected…
The discovery of ferroelectricity in HfO$_2$-based thin films opens up new opportunities for using this silicon-compatible ferroelectric to realize low-power logic circuits and high-density non-volatile memories. The functional performances…
With the recent experimental verification that ferroelectric lattice distortions survive in the metallic phase of some materials, there is a desire to create devices that are both switchable and take advantage of the novel functionalities…
We study the influence of the thickness Df of the plain ferromagnetic (F) film on the electrical resistance of the flux-coupled hybrids, consisting of superconducting (S) Al film and multilayer [Co/Pt] F film with out-of-plain…
Conventionally, dc fields are used for switching dipole orientations in ferroelectrics. Such fields tilt the potential surface experienced by domain walls and thereby lower activation energies for their movement: escape from tilted…
Nanoscale ferroelectrics that can be integrated into microelectronic fabrication processes are highly desirable for low-power computing and non-volatile memory devices. However, scalable novel ferroelectric materials, such as hafnium oxide…