Related papers: Thickness-Dependence of the Coercive Field in Ferr…
Much attention has been given recently to flexible and wearable integrated-electronic devices, with a strong emphasis on real-time sensing, computing and communication technologies. Thin ferroelectric films exhibit switchable polarization…
General energy approaches have been applied to study the single-domain polarization reversal induced by the voltage-modulated Atomic Force Microscopy (AFM) in ferroelectric single crystals and thin films. Topographic analysis of energy…
We investigated coercive fields of 200nm x 1200nm x 5nm rectangular nanocrystalline thin films as a function of grain size D using finite elements simulations. To this end, we created granular finite element models with grain sizes ranging…
By assuming a more realistic nucleation and polarization reversal scenario we build a new statistical switching model for ferroelectrics, which is different from either the Kolmogorov-Avrami-Ishibashi (KAI) model or the…
The properties of a ferroelectric, (001)-oriented, thin film clamped to a substrate are investigated analytically and numerically. The emphasis is on the tetragonal, polydomain, ferroelectric phase, using a three domain structure, as is…
The consideration of size-induced ferroelectric-paraelectric phase transition for conventional and incipient ferroelectrics thin films with perovskite structure was carried out in phenomenological theory framework of…
Real ferroelectric devices operate under mixed and distorted time-varying voltages, yet the standard nucleation-growth frameworks used to interpret ferroelectric switching - most notably the Kolmogorov-Avrami-Ishibashi (KAI) and…
In the paper we consider size effects of phase transitions and polar properties of the thin antiferroelectric films. We modified phenomenological approach proposed by Kittel. The Euler-Lagrange equations were solved by direct variational…
We report first-principle atomistic simulations on the effect of local strain gradients on the nanoscale domain morphology of free-standing PbTiO$_3$ ultrathin films. First, the ferroelectric properties of free films at the atomic level are…
Pressure-induced polarization switching in ferroelectric thin films has emerged as a powerful method for domain patterning, allowing to create predefined domain patterns on free surfaces and under thin conductive top electrodes. However,…
The ability to switch between distinct states of polarization comprises the defining property of ferroelectrics. However, the microscopic mechanism responsible for switching is not well understood and theoretical estimates based on coherent…
Charge transport in QD solids is typically understood as thermally activated tunneling or hopping between states that are localized on individual QDs. Here, we show that the slow relaxation that is associated with the disorder-broadened…
Phase field modeling of domain structures in ferroelectrics nanorods of different shape and sizes is presented. The vortex domain configurations in confined ferroelectrics have been explored by varying the ratio of the energies of…
Wurtzite-type Al$_{1-x}$Sc$_x$N solid solutions grown by metal organic chemical vapour deposition are for the first time confirmed to be ferroelectric. The film with 230 nm thickness and x = 0.15 exhibits a coercive field of 5.5 MV/cm at a…
This paper combines experimental and modelling studies to provide a detailed examination of the influence of porosity volume fraction and morphology on the polarisation-electric field response of ferroelectric materials. The broadening of…
Based on extensive first principle calculations, we explore the thickness dependent effective di- electric constant and slab polarizability of few layer black phosphorene. We find that the dielectric constant in ultra-thin phosphorene is…
We present a thermodynamic analysis of the recently discovered nitride ferroelectric materials using the classic Landau-Devonshire approach. The electrostrictive and dielectric stiffness coefficients of Al1-xScxN with wurtzite structure…
While scandium-doped aluminum nitride (AlScN) exhibits robust ferroelectricity and excellent thermal stability, its utility is limited by an exceptionally high coercive field ($E_c$) for polarization switching. Unraveling the atomistic…
The supercurrent field effect is experimentally realized in various nano-scale devices, based on the superconductivity suppression by external electric fields being effective for confined systems. In spite of intense research, a microscopic…
Phase-field simulation (PFS) have revolutionized the understanding of domain structure and switching behavior in ferroelectric thin films and ceramics. Generally, PFS is based on solution of a (set) of Ginzburg-Landau equations for a…