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The annealing of sub-critical Ge wetting layers (WL<3.5 ML) initiates the formation of 3D nanostructures, whose shape and orientation is determined by the WL thickness and thus directly related to the strain energy. The emergence of these…

Materials Science · Physics 2016-06-22 Gopalakrishnan Ramalingam , Jerrold A. Floro , Petra Reinke

We present ab initio local-density-functional electronic structure calculations for the (111) and (-1-1-1) surfaces of cubic BN. The energetically stable reconstructions, namely the N adatom, N3 triangle models on the (111), the (2x1),…

Materials Science · Physics 2009-10-31 Krisztina Kadas , Georg Kern , Jurgen Hafner

Ag(111) films were deposited at room temperature onto H-passivated Si(111)-(1x1) substrates, and subsequently annealed at 300 C. An abrupt non-reactive Ag/Si interface is formed, and very uniform non-strained Ag(111) films of 6-12…

Soft Condensed Matter · Physics 2009-11-07 A. Arranz , J. F. Sanchez-Royo , J. Avila , V. Perez-Dieste , P. Dumas , M. C. Asensio

Nano--metal/semiconductor junction dependent porosification of silicon (Si) has been studied here. The silicon (Si) nanostructures (NS) have been textured on n-- and p-- type silicon wafers using Ag and Au metal nano particles induced…

Mesoscale and Nanoscale Physics · Physics 2017-05-09 Priyanka Yogi , Deepika Poonia , Suryakant Mishra , Shailendra K. Saxena , Swarup Roy , Pankaj R Sagdeo , Rajesh Kumar

Single self-assembled InAs/GaAs quantum dots are a promising solid-state quantum technology, with which vacuum Rabi splitting, single-photon-level nonlinearities, and bright, pure, and indistinguishable single-photon generation having been…

We study the self-assembly of halogen-based organic molecules on a passivated silicon surface. The room temperature adsorption of 2,4,6-tris(4-iodophenyl)-1,3,5-triazine (TIPT) on the Si(111)-$\surd$3$\times$$\surd$3-Ag surface is…

Materials Science · Physics 2024-10-07 R Liu , D. Marchese , R. C. Mawhinney , M. C. Gallagher

We consider a simple model for the growth of isolated steps on a vicinal crystal surface. It incorporates diffusion and drift of adatoms on the terrace, and strong step and kink edge barriers. Using a combination of analytic methods and…

Materials Science · Physics 2009-10-31 J. Heinonen , I. Bukharev , T. Ala-Nissila , J. M. Kosterlitz

Silicene, the two-dimensional (2D) allotrope of silicon has very recently attracted a lot of attention. It has a structure that is similar to graphene and it is theoretically predicted to show the same kind of electronic properties which…

Materials Science · Physics 2017-12-07 W. Wang , W. Olovsson , R. I. G. Uhrberg

Assembling nanostructured building blocks into network materials unlocks macroscopic properties inaccessible with monolithic solids, notably toughness and tolerance to electrochemical alloying. A method is reported for large-scale,…

Materials Science · Physics 2020-12-01 Richard S. Schäufele , Miguel Vazquez-Pufleau , Juan J. Vilatela

We demonstrate a nanostructure composed of partially etched annular trenches in a suspended GaAs membrane, designed for efficient and moderately broadband (approx. 5 nm) emission extraction from single InAs quantum dots. Simulations…

Optics · Physics 2011-09-28 M. Davanco , M. T. Rakher , D. Schuh , A. Badolato , K. Srinivasan

We present self-assembly of InAs/InAlAs quantum dots by droplet epitaxy technique on vicinal GaAs(111)A substrates. The small miscut angle, while maintaining the symmetries imposed to the quantum dot from the surface, allows fast growth…

The growth of well-ordered Mn nanodots arrays on Si(111)-7*7 reconstructed surface was investigated by means of scanning tunneling microscopy (STM) as well as Kinetic Monte Carlo (KMC) simulation. Mn atoms deposited slowly onto elevated…

Materials Science · Physics 2009-11-11 De-yong Wang , Hong-ye Wu , Li-jun Chen , Wei He , Qing-feng Zhan , Zhao-hua Cheng*

Strain-engineering in SiGe nanostructures is fundamental for the design of optoelectronic devices at the nanoscale. Here we explore a new strategy, where SiGe structures are laterally confined by the Si substrate, to obtain high tensile…

Single GaN nanowires formed spontaneously on a given substrate represent nanoscopic single crystals free of any extended defects. However, due to the high area density of thus formed GaN nanowire ensembles, individual nanowires coalesce…

In this paper we present a detailed analysis of the atomic and electronic structure of GaAs nanowires using first-principles pseudopotential calculations. We consider six different types of nanowires with different diameters all grown along…

Materials Science · Physics 2010-12-24 S. Cahangirov , S. Ciraci

Single layer graphene islands with a typical diameter of several nanometers were grown on a Pt (111) substrate. Scanning tunneling microscopy (STM) analysis showed most of islands are hexagonally shaped and the zigzag-type edge predominates…

Mesoscale and Nanoscale Physics · Physics 2011-01-21 Mayu Yamamoto , Seiji Obata , Koichiro Saiki

Functional nano-templates enable self-assembly of otherwise impossible arrangements of molecules. A particular class of such templates is that of sp2 hybridized single layers of hexagonal boron nitride or carbon (graphene) on metal…

Atomic and Molecular Clusters · Physics 2010-09-28 Haifeng Ma , Mario Thomann , Jeanette Schmidlin , Silvan Roth , Martin Morscher , Thomas Greber

Intercalation at the graphene/SiC interface provides a controlled route to stabilize atomically thin layers with properties distinct from their bulk counterparts. In this platform, the structure and stability of the intercalated phase…

We describe a recently discovered stable planar surface of silicon, Si(114). This high-index surface, oriented 19.5 degrees away from (001) toward (111), undergoes a 2x1 reconstruction. We propose a complete model for the reconstructed…

mtrl-th · Physics 2009-10-30 Steven C. Erwin , Alison A. Baski , Lloyd J. Whitman

The importance of microstructure increases when decreasing the size of an object to the nanoscale, along with the complexity of controlling it. For instance, it is particularly complicated to create nano-object with controlled interfaces.…