Related papers: The prefactor for screened Mott hopping
For insulating Si:B with dopant concentrations from 0.75 n_c to the critical concentration n_c, the conductivity ranging over five orders of magnitude collapses using a single scaling parameter T* onto a universal curve of the form $\sigma…
We report an universal behaviour of hopping transport in strongly interacting mesoscopic two-dimensional electron systems (2DES). In a certain window of background disorder, the resistivity at low perpendicular magnetic fields follows the…
Using uniaxial stress to tune the critical density near that of the sample, we have studied in detail the low-temperature conductivity of p-type Si:B in the insulating phase very near the metal-insulator transition. For all values of…
A universal scaling function, describing the crossover between the Mott and the Efros-Shklovskii hopping regimes, is derived, using the percolation picture of transport in strongly localized systems. This function is agrees very well with…
We report conductivity measurements of Cr-doped V2O3 using a variable pressure technique. The critical behavior of the conductivity near the Mott-insulator to metal critical endpoint is investigated in detail as a function of pressure and…
Pressure dependence of the conductivity and thermoelectric power is measured through the Mott transition in the layer organic conductor EtMe3P[Pd(dmit)2]2. The critical behavior of the thermoelectric effect provides a clear and objective…
By using a combination of detailed experimental studies and simple theoretical arguments, we identify a novel mechanism characterizing the hopping transport in the Mott insulating phase of Ca$_{2-x}$Sr$_x$RuO$_4$ near the metal-insulator…
We present a study of hopping conductivity for a system of sites which can be occupied by more than one electron. At a moderate on-site Coulomb repulsion, the coexistence of sites with occupation numbers 0, 1, and 2 results in an…
We present the carrier transport properties in the vicinity of a doping-driven Mott transition observed at a field-effect transistor (FET) channel using a single crystal of the typical two-dimensional organic Mott insulator…
Interplay between the Mott transition and the multicritical phenomenon of d-wave superconductivity (SC) and antiferromagnetism (AF) is studied theoretically. We describe the Mott transition, which is analogous to a liquid-gas phase…
In an attempt to understand quantitatively the remarkable discoveries of metal-insulator transitions in two-dimensional systems, we generalize Mott's variable range hopping theory to the situation with strong Coulomb interaction. In our…
We consider the low-temperature differential tunneling conductance $G$ for interfaces between a planar insulating material in the Mott-class and a metal. For values of the the applied potential difference $V$ that are not very small, there…
The Mott-Hubbard transition is studied in the context of the two-dimensional Hubbard model. Analytical calculations show the existence of a critical value Uc of the potential strength which separates a paramagnetic metallic phase from a…
We study numerically the voltage-induced breakdown of a Mott insulating phase in a system of charged classical particles with long-range interactions. At half-filling on a square lattice this system exhibits Mott localization in the form of…
We study the Mott transition as a function of interaction strength in the half-filled Hubbard chain with next-nearest-neighbor hopping t' by calculating the response to an external electric field using the Density Matrix Renormalization…
We have studied the AC response of a hopping model in the variable range hopping regime by dynamical Monte Carlo simulations. We find that the conductivity as function of frequency follows a universal scaling law. We also compare the…
Mott variable range hopping is a fundamental mechanism for low-temperature electron conduction in disordered solids in the regime of Anderson localization. In a mean field approximation, it reduces to a random walk (shortly, Mott random…
We explain in a consistent manner the set of seemingly conflicting experiments on the finite temperature Mott critical point, and demonstrate that the Mott transition is in the Ising universality class. We show that, even though the…
In a film with large dielectric constant $\kappa$ the electric field of an electron spreads inside the film before exiting the film at large distances of order of $\kappa d$ ($d$ is the film width). This leads to the logarithmic Coulomb…
We have numerically determined the behavior of the magnetic susceptibility upon approach of the critical point in two-dimensional spin systems with an interaction range that was varied over nearly two orders of magnitude. The full crossover…