Related papers: Strain-induced quantum ring hole states in a gated…
The authors theoretically investigate quantum confinement and transition energies in quantum wells (QWs) asymmetrically positioned in wrinkled nanomembranes. Calculations reveal that the wrinkle profile induces both blue- and redshifts…
We investigate the tunnel rates and energies of excited states of small numbers of electrons in a quantum dot fabricated in a Si/SiGe heterostructure. Tunnel rates for loading and unloading electrons are found to be strongly energy…
Measurements of the Hall and dissipative conductivity of a strained Ge quantum well on a SiGe/(001)Si substrate in the quantum Hall regime are reported. We find quantum Hall states in the Composite Fermion family and a precursor signal at…
We extend a special kind of localized state trapped at the intersection due to the geometric confinement, first proposed in a three-terminal-opening T-shaped structure [Euro. Phys. Lett. {\bf 55}, 539 (2001)], into a ring geometry with a…
In a GaAs/AlGaAs two-dimensional electron system with two occupied subbands, the experimentally determined phase diagram in the density-magnetic field plane exhibits rich topological features. Ring-like structures are observed at even…
Split-gate constrictions can be used to produce controllable scattering in a fractional quantum Hall state and constitute a very versatile model system for the investigation of non-Fermi physics in edge states. Controllable inter-edge…
Hole spins in semiconductor quantum dots can be efficiently manipulated with radio-frequency electric fields owing to the strong spin-orbit interactions in the valence bands. Here we show that the motion of the dot in inhomogeneous strain…
Neutral excitons in strained axially symmetric In(Ga)As/GaAs quantum dots with ringlike shape are investigated. Similar to experimental self-assembled quantum rings, the analyzed quantum dots have volcano-like shapes. The continuum…
We demonstrate an efficient method to engineer the quantum confinement in a system of two quantum dots grown in a vertical stack. We achieve this by using materials with a different lattice constant for the growth of the outer and inner…
Recent theory predicted that the Quantum Spin Hall Effect, a fundamentally novel quantum state of matter that exists at zero external magnetic field, may be realized in HgTe/(Hg,Cd)Te quantum wells. We have fabricated such sample structures…
I present a systematic study of self-assembled InAs/InP and InAs/GaAs quantum dots single particle and many body properties as a function of quantum dot-surrounding matrix valence band offset. I use an atomistic, empirical tight-binding…
Band edge and energy levels of truncated pyramidal In_x Ga_(1-x) As/GaAs (001) quantum dots are studied by single-band effective mass approach, and the dependence to stoichiometric percentages is investigated. It is shown that enhancement…
Motivated by the recent experiments of Amasha {\it et al.} [Phys. Rev. B {\bf 78}, 041306(R) (2008)], we investigate single electron tunneling into an empty quantum dot in presence of a magnetic field. We numerically calculate the tunneling…
Using real-time charge sensing and gate pulsing techniques we measure the ratio of the rates for tunneling into the excited and ground spin states of a single-electron AlGaAs/GaAs quantum dot in a parallel magnetic field. We find that the…
Below 360 mK, Fe magnetic molecular clusters are in the pure quantum relaxation regime and we show that the predicted square-root time relaxation is obeyed, allowing us to develop a new method for watching the evolution of the distribution…
The fractional quantum Hall effect (FQHE) of topological surface-state particles under a tilted strong magnetic field is theoretically studied by using the exact diagonalization method. The Haldane's pseudopotentials for the Coulomb…
We demonstrate a novel method for measuring the discrete energy spectrum of a quantum dot connected very weakly to a single lead. A train of voltage pulses applied to a metal gate induces tunneling of electrons between the quantum dot and a…
By breaking the time-reversal-symmetry in three-dimensional topological insulators with introduction of spontaneous magnetization or application of magnetic field, the surface states become gapped, leading to quantum anomalous Hall effect…
Holes in cubic semiconductors have effective spin 3/2 and very strong spin orbit interaction. Due to these factors properties of hole bound states are highly unusual. We consider a single hole bound by a spherically symmetric potential,…
A spatially modulated Dirac gap in a graphene sheet leads to charge confinement, thus enabling a graphene quantum dot to be formed without the application of external electric and magnetic fields [Appl. Phys. Lett. \textbf{97}, 243106…