Related papers: Spin polarization and transition from metallic to …
We present magnetic and tunnel transport properties of (Ga,Mn)As/(In,Ga)As/(Ga,Mn)As structure before and after adequate annealing procedure. The conjugate increase of magnetization and tunnel magnetoresistance obtained after annealing is…
We have investigated spin and carrier dynamics of resident holes in high-mobility two-dimensional hole systems in GaAs/Al$_{0.3}$Ga$_{0.7}$As single quantum wells at temperatures down to 400 mK. Time-resolved Faraday and Kerr rotation, as…
We report the transport properties of a low disorder two-dimensional hole system (2DHS) in the GaAs/AlGaAs heterostructure, which has an unprecedentedly high peak mobility of $7\times 10^5cm^2/Vs$, with hole density of $4.8\times 10^9…
We find that the polarization field, B_chi, obtained by scaling the weak-parallel-field magnetoresistance at different electron densities in a dilute two-dimensional electron system in (111) silicon, corresponds to the spin susceptibility…
Magnetic barriers in two-dimensional electron gases are shifted in B space by homogeneous, perpendicular magnetic fields. The magnetoresistance across the barrier shows a characteristic asymmetric dip in the regime where the polarity of the…
The effect of in-plane electric field on Landau level spacing, spin splitting energy, average spin polarization and average spin current in the bulk as well as at the edges of a two-dimensional electron system with Rashba spin-orbit…
The paper by A. A. Shashkin et al. [cond-mat/0409100] reports measurements of the thermodynamic magnetization of two-dimensional electrons in silicon. Although the experimental data is very similar to that reported by us more then two years…
Understanding, creating, and manipulating spin polarization of two-dimensional electron gases at complex oxide interfaces presents an experimental challenge. For example, despite almost a decade long research effort, the microscopic origin…
We consider the magnetic response of a two-dimensional electron gas (2DEG) with a spin-orbit interaction to a long-wave-length electromagnetic excitation. We observe that the transverse electric field creates spin polarization perpendicular…
Based on a Monte Carlo method, we investigate the influence of transport conditions on the electron spin relaxation in GaAs. The decay of initial electron spin polarization is calculated as a function of distance under the presence of…
The formation of a novel spin-polarized 2D electron gas at the LaMnO$_3$ monolayer embedded in SrMnO$_3$ is predicted from the first-principles density-functional calculations. The La (d) electrons become confined in the direction normal to…
Correlated two-dimensional (2D) layers, like 1T-phases of TaS2, TaSe2 and NbSe2, exhibit rich tunability through varying interlayer couplings, which promotes the understanding of electron-correlation in the 2D limit. However, the coupling…
We report effective hole mass ($m^{*}$) measurements through analyzing the temperature dependence of Shubnikov-de Haas oscillations in dilute (density $p \sim 7 \times 10^{10}$ cm$^{-2}$, $r_{s} \sim 6$) two-dimensional (2D) hole systems…
We have studied polariton spin dynamics in a GaAs/AlGaAs microcavity by means of polarization- and time-resolved photoluminescence spectroscopy as a function of excitation density and normal mode splitting. The experiments reveal a novel…
We report on electronic transport measurements of electrostatically gated nano-devices of the semimetal WTe\textsubscript{2}. High mobility metallic behavior is achieved in the 2D limit by encapsulating thin flakes in an inert atmosphere.…
In ferromagnet/normal-metal bilayers, the sensitivity of the spin Hall magnetoresistance and the spin Nernst magnetothermopower to the boundary conditions at the interface is of central importance. In general, such boundary conditions can…
The electron's kinetic energy plays a pivotal role in magnetism. While virtual electron hopping promotes antiferromagnetism in an insulator, the real process usually favors ferromagnetism. But in kinetically frustrated systems, such as hole…
Colossal negative magnetoresistance and the associated field-induced insulator-to-metal transition, the most characteristic features of magnetic semiconductors, are observed in n-type rare earth oxides and chalcogenides, p-type manganites,…
It is demonstrated by SQUID magnetization measurements that (Ga,Mn)As films can exhibit rich characteristics of magnetic anisotropy depending not only to the epitaxial strain but being strongly influenced by the hole and Mn concentration,…
We report here numerical results of the low-temperature behavior of a dipolar spin ice in a magnetic field along the [100] direction. Tuning the magnetic field, the system exhibit a half-magnetization plateau at low temperature. This…